发明授权
- 专利标题： Back end integrated WLCSP structure without aluminum pads
- 专利标题（中）： 后端集成WLCSP结构，无铝焊盘
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申请号： US11933572申请日： 2007-11-01
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公开(公告)号： US07863742B2公开(公告)日： 2011-01-04
- 发明人: Hsiu-Mei Yu , Tjandra Winata Karta , Daniel Yang , Shih-Ming Chen , Chia-Jen Cheng
- 申请人： Hsiu-Mei Yu , Tjandra Winata Karta , Daniel Yang , Shih-Ming Chen , Chia-Jen Cheng
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L23/488
- IPC分类号： H01L23/488
摘要：
An integrated circuit structure includes a passivation layer; a via opening in the passivation layer; a copper-containing via in the via opening; a polymer layer over the passivation layer, wherein the polymer layer comprises an aperture, and wherein the copper-containing via is exposed through the aperture; a post-passivation interconnect (PPI) line over the polymer layer, wherein the PPI line extends into the aperture and physically contacts the copper-via opening; and an under-bump metallurgy (UBM) over and electrically connected to the PPI line.
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