Invention Grant
- Patent Title: Back end integrated WLCSP structure without aluminum pads
- Patent Title (中): 后端集成WLCSP结构,无铝焊盘
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Application No.: US11933572Application Date: 2007-11-01
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Publication No.: US07863742B2Publication Date: 2011-01-04
- Inventor: Hsiu-Mei Yu , Tjandra Winata Karta , Daniel Yang , Shih-Ming Chen , Chia-Jen Cheng
- Applicant: Hsiu-Mei Yu , Tjandra Winata Karta , Daniel Yang , Shih-Ming Chen , Chia-Jen Cheng
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/488
- IPC: H01L23/488

Abstract:
An integrated circuit structure includes a passivation layer; a via opening in the passivation layer; a copper-containing via in the via opening; a polymer layer over the passivation layer, wherein the polymer layer comprises an aperture, and wherein the copper-containing via is exposed through the aperture; a post-passivation interconnect (PPI) line over the polymer layer, wherein the PPI line extends into the aperture and physically contacts the copper-via opening; and an under-bump metallurgy (UBM) over and electrically connected to the PPI line.
Public/Granted literature
- US20090115058A1 Back End Integrated WLCSP Structure without Aluminum Pads Public/Granted day:2009-05-07
Information query
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