发明授权
- 专利标题: Phase change memory device and fabricating method therefor
- 专利标题(中): 相变存储器件及其制造方法
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申请号: US12547744申请日: 2009-08-26
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公开(公告)号: US07868314B2公开(公告)日: 2011-01-11
- 发明人: Wei-Su Chen , Yi-Chan Chen , Wen-Han Wang , Hong-Hui Hsu , Chien-Min Lee , Yen Chuo , Te-Sheng Chao , Min-Hung Lee
- 申请人: Wei-Su Chen , Yi-Chan Chen , Wen-Han Wang , Hong-Hui Hsu , Chien-Min Lee , Yen Chuo , Te-Sheng Chao , Min-Hung Lee
- 申请人地址: TW Hsinchu
- 专利权人: Industrial Technology Research Institute
- 当前专利权人: Industrial Technology Research Institute
- 当前专利权人地址: TW Hsinchu
- 代理机构: Morris, Manning & Martin, LLP
- 代理商 Tim Tingkang Xia
- 优先权: TW94146978A 20051228
- 主分类号: H01L47/00
- IPC分类号: H01L47/00
摘要:
A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.