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    Phase change memory device and fabricating method therefor
    1.
    发明申请
    Phase change memory device and fabricating method therefor 失效
    相变存储器件及其制造方法

    公开(公告)号：US20070148855A1

    公开(公告)日：2007-06-28

    申请号：US11479497

    申请日：2006-06-30

    申请人： Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

    发明人： Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

    IPC分类号： H01L21/8244 ,  H01L21/8238 ,  H01L21/00 ,  H01L21/20

    CPC分类号： H01L45/06 ,  H01L45/122 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

    摘要： A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

    摘要翻译： 提供了一种相变存储器件及其制造方法。 盘状相变层被埋在绝缘材料内。 通过光刻形成中心通孔和环形通孔。 中心通孔位于相变层的中心，通过相变层，环形通孔以中心通孔为中心。 中心通孔内的加热电极进行相变层的焦耳加热，通过控制相变层的厚度来降低相变层与加热电极之间的接触面积。 此外，环通孔内的第二电极耗散了传递到相变层之间的接触界面的热量，以避免将热量传递到相变层周围的蚀刻边界。

    Phase change memory device and fabricating method therefor
    3.
    发明授权
    Phase change memory device and fabricating method therefor 有权
    相变存储器件及其制造方法

    公开(公告)号：US07868314B2

    公开(公告)日：2011-01-11

    申请号：US12547744

    申请日：2009-08-26

    申请人： Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

    发明人： Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

    IPC分类号： H01L47/00

    CPC分类号： H01L45/06 ,  H01L45/122 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

    摘要： A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

    摘要翻译： 提供了一种相变存储器件及其制造方法。 盘状相变层被埋在绝缘材料内。 通过光刻形成中心通孔和环形通孔。 中心通孔位于相变层的中心，通过相变层，环形通孔以中心通孔为中心。 中心通孔内的加热电极进行相变层的焦耳加热，通过控制相变层的厚度来降低相变层与加热电极之间的接触面积。 此外，环通孔内的第二电极耗散了传递到相变层之间的接触界面的热量，以避免将热量传递到相变层周围的蚀刻边界。

    PHASE CHANGE MEMORY DEVICE AND FABRICATING METHOD THEREFOR
    4.
    发明申请
    PHASE CHANGE MEMORY DEVICE AND FABRICATING METHOD THEREFOR 有权
    相变记忆装置及其制作方法

    公开(公告)号：US20100140583A1

    公开(公告)日：2010-06-10

    申请号：US12547744

    申请日：2009-08-26

    申请人： Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

    发明人： Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

    IPC分类号： H01L45/00

    CPC分类号： H01L45/06 ,  H01L45/122 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

    摘要： A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

    摘要翻译： 提供了一种相变存储器件及其制造方法。 盘状相变层被埋在绝缘材料内。 通过光刻形成中心通孔和环形通孔。 中心通孔位于相变层的中心，通过相变层，环形通孔以中心通孔为中心。 中心通孔内的加热电极进行相变层的焦耳加热，通过控制相变层的厚度来降低相变层与加热电极之间的接触面积。 此外，环通孔内的第二电极耗散了传递到相变层之间的接触界面的热量，以避免将热量传递到相变层周围的蚀刻边界。

    Phase change memory device and fabricating method therefor
    5.
    发明授权
    Phase change memory device and fabricating method therefor 失效
    相变存储器件及其制造方法

    公开(公告)号：US07598113B2

    公开(公告)日：2009-10-06

    申请号：US11479497

    申请日：2006-06-30

    申请人： Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

    发明人： Wei-Su Chen ,  Yi-Chan Chen ,  Wen-Han Wang ,  Hong-Hui Hsu ,  Chien-Min Lee ,  Yen Chuo ,  Te-Sheng Chao ,  Min-Hung Lee

    IPC分类号： H01L21/00 ,  H01L45/00

    CPC分类号： H01L45/06 ,  H01L45/122 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

    摘要： A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography. The center via is located in the center of the phase change layer and passes through the phase change layer, and the ring via takes the center via as a center. A heating electrode within the center via performs Joule heating of the phase change layer, and the contact area between the phase change layer and the heating electrode is reduced by controlling the thickness of the phase change layer. Furthermore, a second electrode within the ring via dissipates the heat transmitted to the contact interface between the phase change layers, so as to avoid transmitting the heat to the etching boundary at the periphery of the phase change layer.

    摘要翻译： 提供了一种相变存储器件及其制造方法。 盘状相变层被埋在绝缘材料内。 通过光刻形成中心通孔和环形通孔。 中心通孔位于相变层的中心，通过相变层，环形通孔以中心通孔为中心。 中心通孔内的加热电极进行相变层的焦耳加热，通过控制相变层的厚度来降低相变层与加热电极之间的接触面积。 此外，环通孔内的第二电极耗散了传递到相变层之间的接触界面的热量，以避免将热量传递到相变层周围的蚀刻边界。