Invention Grant
- Patent Title: Semiconductor apparatus and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12200177Application Date: 2008-08-28
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Publication No.: US07875481B2Publication Date: 2011-01-25
- Inventor: Yutaka Onozuka , Hiroshi Yamada , Hideyuki Funaki , Kazuhiko Itaya
- Applicant: Yutaka Onozuka , Hiroshi Yamada , Hideyuki Funaki , Kazuhiko Itaya
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2006-091242 20060329
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
It is made possible to provide a highly integrated, thin apparatus can be obtained, even if the apparatus contains MEMS devices and semiconductor devices. A semiconductor apparatus includes: a first chip comprising a MEMS device formed therein; a second chip comprising a semiconductor device formed therein; and an adhesive layer bonding a side face of the first chip to a side face of the second chip, and having a lower Young's modulus than the material of the first and second chips.
Public/Granted literature
- US20080318356A1 SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2008-12-25
Information query
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