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发明授权
US07883746B2 Insulating film formation method which exhibits improved thickness uniformity and improved composition uniformity 有权
表现出改善的厚度均匀性和改善组合物均匀性的绝缘膜形成方法

Insulating film formation method which exhibits improved thickness uniformity and improved composition uniformity
摘要：
In an insulating film formation method, a cycle A in which O3 at a low flow rate is supplied onto a substrate and then O3 supplied is allowed to react with Hf on the substrate in a non-equilibrium state to form a hafnium oxide film is carried out M times (M≧1), and a cycle B in which O3 at a high flow rate is supplied onto the substrate and then O3 supplied is allowed to react with Hf on the substrate in an equilibrium state to form a hafnium oxide film is carried out N times (N≧1). These insulating film formation cycles are defined as one sequence. This sequence is repeated until a desired thickness is obtained, thereby forming a target insulating film.
摘要（中）：

在绝缘膜形成方法中，将以低流量供给O3，然后供给O 3的O 3的循环A在非平衡状态下与基板上的Hf反应，形成氧化铪膜 （M≥1），以及将高流量O 3供给到基板上的循环B，然后供给的O 3以与平衡状态的基板上的Hf反应形成氧化铪膜为 进行N次（N≥1）。 这些绝缘膜形成循环被定义为一个顺序。 重复该顺序，直到获得所需的厚度，从而形成目标绝缘膜。

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