Insulating film formation method which exhibits improved thickness uniformity and improved composition uniformity
    1.
    发明授权
    Insulating film formation method which exhibits improved thickness uniformity and improved composition uniformity 有权
    表现出改善的厚度均匀性和改善组合物均匀性的绝缘膜形成方法

    公开(公告)号:US07883746B2

    公开(公告)日:2011-02-08

    申请号:US11826495

    申请日:2007-07-16

    IPC分类号: C23C16/40

    摘要: In an insulating film formation method, a cycle A in which O3 at a low flow rate is supplied onto a substrate and then O3 supplied is allowed to react with Hf on the substrate in a non-equilibrium state to form a hafnium oxide film is carried out M times (M≧1), and a cycle B in which O3 at a high flow rate is supplied onto the substrate and then O3 supplied is allowed to react with Hf on the substrate in an equilibrium state to form a hafnium oxide film is carried out N times (N≧1). These insulating film formation cycles are defined as one sequence. This sequence is repeated until a desired thickness is obtained, thereby forming a target insulating film.

    摘要翻译: 在绝缘膜形成方法中,将以低流量供给O3,然后供给O 3的O 3的循环A在非平衡状态下与基板上的Hf反应,形成氧化铪膜 (M≥1),以及将高流量O 3供给到基板上的循环B,然后供给的O 3以与平衡状态的基板上的Hf反应形成氧化铪膜为 进行N次(N≥1)。 这些绝缘膜形成循环被定义为一个顺序。 重复该顺序,直到获得所需的厚度,从而形成目标绝缘膜。

    Semiconductor device and semiconductor device manufacturing method
    2.
    发明申请
    Semiconductor device and semiconductor device manufacturing method 审中-公开
    半导体器件和半导体器件制造方法

    公开(公告)号:US20080017954A1

    公开(公告)日:2008-01-24

    申请号:US11826087

    申请日:2007-07-12

    IPC分类号: H01L23/58 H01L21/31

    摘要: A capacitor insulating film composed of a layered film of first- to third-layer hafnium oxide films is formed on a lower electrode of a capacitor. The first- and third-layer hafnium oxide films have a composition ratio of oxygen to hafnium higher than the second-layer hafnium oxide film. Thus, the capacitor insulating film is composed of the first- and third-layer hafnium oxide films having greater barrier height and the second-layer hafnium oxide film having a higher dielectric constant, thereby attaining a capacitor having less leakage current and large capacity.

    摘要翻译: 在电容器的下电极上形成由第一至第三层氧化铪膜的层叠膜构成的电容绝缘膜。 第一层和第三层氧化铪膜的氧与铪的组成比高于第二层氧化铪膜。 因此,电容器绝缘膜由具有较高势垒高度的第一和第三层氧化铪膜和具有较高介电常数的第二层氧化铪膜组成,从而获得具有较小漏电流和大容量的电容器。

    Insulating film formation method, semiconductor device, and substrate processing apparatus
    3.
    发明申请
    Insulating film formation method, semiconductor device, and substrate processing apparatus 有权
    绝缘膜形成方法,半导体器件和衬底处理设备

    公开(公告)号:US20080026251A1

    公开(公告)日:2008-01-31

    申请号:US11826495

    申请日:2007-07-16

    IPC分类号: H01L21/31 B32B9/00 C23C16/00

    摘要: In an insulating film formation method, a cycle A in which O3 at a low flow rate is supplied onto a substrate and then O3 supplied is allowed to react with Hf on the substrate in a non-equilibrium state to form a hafnium oxide film is carried out M times (M≧1), and a cycle B in which O3 at a high flow rate is supplied onto the substrate and then O3 supplied is allowed to react with Hf on the substrate in an equilibrium state to form a hafnium oxide film is carried out N times (N≧1). These insulating film formation cycles are defined as one sequence. This sequence is repeated until a desired thickness is obtained, thereby forming a target insulating film.

    摘要翻译: 在绝缘膜形成方法中,将其中以低流量供给O 3 N的循环A供应到基板上,然后将所提供的O 3与Hf反应, 在非平衡状态下形成氧化铪膜的衬底进行M次(M> = 1),并且以高流速将O 3 3的循环B供给到 将底物和然后使O 3在平衡状态下与Hf在基板上反应以形成氧化铪膜N次(N> = 1)。 这些绝缘膜形成循环被定义为一个顺序。 重复该顺序,直到获得所需的厚度,从而形成目标绝缘膜。

    LED light source device
    9.
    发明授权
    LED light source device 失效
    LED光源装置

    公开(公告)号:US08591063B2

    公开(公告)日:2013-11-26

    申请号:US13266354

    申请日:2010-12-27

    申请人: Kenji Yoneda

    发明人: Kenji Yoneda

    IPC分类号: F21S4/00 F21V21/00

    摘要: The present invention is intended to thermally isolate an LED and a control part from each other to make it difficult to thermally influence each other, and also to optimize fin shapes suitable for allowable temperatures of the both respectively, and is provided with: a first housing that contains an LED board; a second housing that contains an LED control part; a connecting member that connects the first housing and the second housing to each other; a fan mechanism that is provided between the first housing and the second housing; heat dissipation fins that are provided around the fan mechanism in the first housing; and an air path of which one end opening is formed at a position facing to an air inlet side of the fan mechanism in the second housing, and the other opening is formed on a surface different from an opposed surface of the second housing.

    摘要翻译: 本发明旨在将LED和控制部件彼此热隔离,使得难以彼此热影响,并且还优选分别适合于两者的允许温度的翅片形状,并且设置有:第一壳体 包含一个LED板; 第二壳体,其包含LED控制部件; 连接构件,其将所述第一壳体和所述第二壳体彼此连接; 风扇机构,其设置在所述第一壳体和所述第二壳体之间; 设置在第一壳体中的风扇机构周围的散热片; 在第二壳体的与风扇机构的空气入口侧相对的位置上形成有一个端部开口的空气路径,另一个开口形成在与第二壳体的相对表面不同的表面上。

    LIGHT IRRADIATING DEVICE
    10.
    发明申请
    LIGHT IRRADIATING DEVICE 审中-公开
    光照射装置

    公开(公告)号:US20120201023A1

    公开(公告)日:2012-08-09

    申请号:US13500468

    申请日:2010-09-15

    申请人: Kenji Yoneda

    发明人: Kenji Yoneda

    IPC分类号: F21V29/00 F21V7/00 F21V21/00

    摘要: In order to enable heat from luminous objects to be effectively radiated, and assembly to be simplified to facilitate downsizing and the like, a linear light irradiating device is configured such that a luminous object mounting board is contained in a bottom-equipped groove-like containing space in a body in a bending state of being elastically deformed, and also on the basis of an elastic restoring force of the board, a back surface of a luminous object mounting region in the board or vicinity of the back surface is pressed against and brought into close contact with a fore end surface of an intervening object that has thermal conductivity and is made to protrude from an inner circumferential surface of the containing space.

    摘要翻译: 为了使得发光体的热量得到有效辐射,并且组装简化以便于小型化等,线性光照射装置被构造成使得发光体安装板被包含在底部装有槽状的容纳 弹性变形的弯曲状态下的身体的空间,并且基于板的弹性恢复力,背面的板或附近的发光体安装区域的背面被按压并带动 与具有导热性并从容纳空间的内周面突出的中间物体的前端面紧密接触。