发明授权
- 专利标题: Method for double patterning a thin film
- 专利标题(中): 双重图案化薄膜的方法
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申请号: US11534538申请日: 2006-09-22
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公开(公告)号: US07883835B2公开(公告)日: 2011-02-08
- 发明人: Sandra L. Hyland , Shannon W. Dunn
- 申请人: Sandra L. Hyland , Shannon W. Dunn
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Wood, Herron & Evans, LLP
- 主分类号: H01L21/312
- IPC分类号: H01L21/312
摘要:
A method of double patterning a thin film is described. The method comprises forming a thin film to be patterned on a substrate, forming an anti-reflective coating (ARC) layer on the thin film, and forming a mask layer on the ARC layer. Thereafter, the mask layer is patterned to form a first pattern and a second pattern therein, and the first and second patterns are partially transferred to the ARC layer using a transfer process, such as an etching process or a developing process. Once the mask layer is removed, the first pattern and second patterns are completely transferred to the ARC layer using an etching process, and the first and second patterns in the ARC layer are transferred to the underlying thin film using another etching process.
公开/授权文献
- US20080076075A1 METHOD FOR DOUBLE PATTERNING A THIN FILM 公开/授权日:2008-03-27