发明授权
- 专利标题： Phase change memory including a plurality of electrically conductive bodies, and manufacturing method thereof
- 专利标题（中）： 包括多个导电体的相变存储器及其制造方法
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申请号： US12184428申请日： 2008-08-01
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公开(公告)号： US07883930B2公开(公告)日： 2011-02-08
- 发明人: Takayuki Tsukamoto , Katsuyuki Naito , Sumio Ashida
- 申请人： Takayuki Tsukamoto , Katsuyuki Naito , Sumio Ashida
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2005-146784 20050519
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A phase change memory including at least a storage cell which includes a first electrode, an electrically conductive portion provided on the first electrode and having at least two electrically conductive bodies with approximately the same shape provided on the first electrode, the electrically conductive bodies being spaced by a high resistance film with a high resistance, a recording layer provided on the electrically conductive portion and having phase change material which can change between a first phase state with a first specific resistance and a second phase state with a second specific resistance different from the first specific resistance, and a second electrode provided on the recording layer.
公开/授权文献
- US20080293183A1 PHASE CHANGE MEMORY AND MANUFACTURING METHOD THEREOF 公开/授权日：2008-11-27
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