公开(公告)号：US20080293183A1

公开(公告)日：2008-11-27

申请号：US12184428

申请日：2008-08-01

申请人： Takayuki TSUKAMOTO ,  Katsuyuki Naito ,  Sumio Ashida

发明人： Takayuki TSUKAMOTO ,  Katsuyuki Naito ,  Sumio Ashida

IPC分类号： H01L45/00

CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/16 ,  Y10S438/90

摘要： Even if sizes of storage cells are reduced in a phase change memory, properties of the respective storage cells can be set to be approximately equal to one another and a current amount required for phase change can be reduced sufficiently. The phase change memory includes at least a storage cell. The storage cell includes a first electrode, an electrically conductive portion provided on the first electrode and having at least two electrically conductive bodies with approximately the same shape provided on the first electrode, the electrically conductive bodies being spaced by a high resistance film with a high resistance, a recording layer provided on the electrically conductive portion and having phase change material which can change between a first phase state with a first specific resistance and a second phase state with a second specific resistance different from the first specific resistance, and a second electrode provided on the recording layer.

摘要翻译： 即使存储单元的尺寸在相变存储器中减少，各个存储单元的特性可以被设置为大致相等，并且可以充分地减少相变所需的电流量。 相变存储器至少包括存储单元。 存储单元包括第一电极，设置在第一电极上的导电部分，并且具有至少两个导电体，其具有设置在第一电极上的大致相同的形状，导电体由高电阻膜隔开，高电阻 电阻，设置在导电部分上并具有能够在具有第一电阻率的第一相位状态与第二相位状态之间变化的相变材料的记录层，其具有不同于第一电阻率的第二电阻率;以及第二电极 提供在记录层上。

公开(公告)号：US07883930B2

公开(公告)日：2011-02-08

申请号：US12184428

申请日：2008-08-01

申请人： Takayuki Tsukamoto ,  Katsuyuki Naito ,  Sumio Ashida

发明人： Takayuki Tsukamoto ,  Katsuyuki Naito ,  Sumio Ashida

IPC分类号： H01L21/00

CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/16 ,  Y10S438/90

摘要： A phase change memory including at least a storage cell which includes a first electrode, an electrically conductive portion provided on the first electrode and having at least two electrically conductive bodies with approximately the same shape provided on the first electrode, the electrically conductive bodies being spaced by a high resistance film with a high resistance, a recording layer provided on the electrically conductive portion and having phase change material which can change between a first phase state with a first specific resistance and a second phase state with a second specific resistance different from the first specific resistance, and a second electrode provided on the recording layer.

摘要翻译： 一种相变存储器，至少包括存储单元，该存储单元包括第一电极，设置在第一电极上的导电部分，并且具有设置在第一电极上的具有大致相同形状的至少两个导电体，导电体间隔开 通过具有高电阻的高电阻膜，设置在导电部分上并具有相变材料的记录层，其可以在具有第一电阻率的第一相位状态和第二相位状态之间变化，具有不同于第二电阻率的第二电阻率 第一电阻率和设置在记录层上的第二电极。

公开(公告)号：US20060261379A1

公开(公告)日：2006-11-23

申请号：US11272751

申请日：2005-11-15

申请人： Takayuki Tsukamoto ,  Katsuyuki Naito ,  Sumio Ashida

发明人： Takayuki Tsukamoto ,  Katsuyuki Naito ,  Sumio Ashida

IPC分类号： H01L29/768

CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/16 ,  Y10S438/90

摘要： Even if sizes of storage cells are reduced in a phase change memory, properties of the respective storage cells can be set to be approximately equal to one another and a current amount required for phase change can be reduced sufficiently. The phase change memory includes at least a storage cell. The storage cell includes a first electrode, an electrically conductive portion provided on the first electrode and having at least two electrically conductive bodies with approximately the same shape provided on the first electrode, the electrically conductive bodies being spaced by a high resistance film with a high resistance, a recording layer provided on the electrically conductive portion and having phase change material which can change between a first phase state with a first specific resistance and a second phase state with a second specific resistance different from the first specific resistance, and a second electrode provided on the recording layer.

摘要翻译： 即使存储单元的尺寸在相变存储器中减少，各个存储单元的特性可以被设置为大致相等，并且可以充分地减少相变所需的电流量。 相变存储器至少包括存储单元。 存储单元包括第一电极，设置在第一电极上的导电部分，并且具有至少两个导电体，其具有设置在第一电极上的大致相同的形状，导电体由高电阻膜隔开，高电阻 电阻，设置在导电部分上并具有能够在具有第一电阻率的第一相位状态与第二相位状态之间变化的相变材料的记录层，其具有不同于第一电阻率的第二电阻率;以及第二电极 提供在记录层上。

公开(公告)号：US09159463B2

公开(公告)日：2015-10-13

申请号：US13625194

申请日：2012-09-24

申请人： Katsuyuki Naito ,  Norihiro Yoshinaga ,  Yoshihiko Nakano ,  Yoshihiro Akasaka ,  Shigeru Matake

发明人： Katsuyuki Naito ,  Norihiro Yoshinaga ,  Yoshihiko Nakano ,  Yoshihiro Akasaka ,  Shigeru Matake

IPC分类号： H01L31/0224 ,  H01B1/02 ,  H01B1/04 ,  C23C16/26

CPC分类号： H01B1/02 ,  B82Y10/00 ,  C23C16/26 ,  H01B1/04 ,  H01L29/1606 ,  H01L29/413 ,  H01L31/022425 ,  H01L31/022466 ,  Y02E10/549 ,  Y10T428/256 ,  Y10T428/26 ,  Y10T428/266

摘要： According to one embodiment, a conductive material includes a carbon substance and a metallic substance mixed with and/or laminated to the carbon substance. The carbon substance has at least one dimension of 200 nm or less. The carbon substance includes a graphene selected from single-layered graphene and multi-layered graphene, a part of carbon atoms constituting the graphene is substituted with a nitrogen atom. The metallic substance includes at least one of a metallic particle and a metallic wire.

摘要翻译： 根据一个实施方案，导电材料包括与碳物质混合和/或层压的碳物质和金属物质。 碳物质具有200nm以下的至少一个尺寸。 碳物质包括选自单层石墨烯和多层石墨烯的石墨烯，构成石墨烯的一部分碳原子被氮原子取代。 金属物质包括金属颗粒和金属线中的至少一种。

公开(公告)号：US20130078550A1

公开(公告)日：2013-03-28

申请号：US13628649

申请日：2012-09-27

申请人： Wu Mei ,  Shigeru Matake ,  Taishi Fukazawa ,  Yoshihiro Akasaka ,  Katsuyuki Naito

发明人： Wu Mei ,  Shigeru Matake ,  Taishi Fukazawa ,  Yoshihiro Akasaka ,  Katsuyuki Naito

IPC分类号： B01J35/10 ,  H01M8/10

CPC分类号： H01M4/92 ,  H01M4/8605 ,  H01M8/1004 ,  H01M2008/1095 ,  Y02E60/50

摘要： According to one embodiment, there is provided a catalyst layer containing a catalyst material. The catalyst layer satisfying requirements below: a porosity of 20 to 90% by vol; and a relation R1≧R0×1.2. In the above inequality, R1 represents an alignment ratio of the catalyst layer and R0 represents an alignment ratio of the catalyst material in powder form having a random crystalline plane distribution, and each of the alignment ratios is calculated from a X-ray diffraction spectrum having a diffraction angle 2θ range from 10 to 90 degree measured using Cu-Kα-rays.

摘要翻译： 根据一个实施方案，提供了含有催化剂材料的催化剂层。 催化剂层满足以下要求：孔隙率为20〜90体积％ 关系R1≥R0×1.2。 在上述不等式中，R1表示催化剂层的取向比，R0表示具有无规晶面分布的粉末状的催化剂材料的取向比，并且，由X射线衍射光谱 衍射角2＆thetas; 使用Cu-Kα射线测量的范围为10至90度。

公开(公告)号：US07842557B2

公开(公告)日：2010-11-30

申请号：US12249688

申请日：2008-10-10

申请人： Yuichi Motoi ,  Katsuyuki Naito

发明人： Yuichi Motoi ,  Katsuyuki Naito

IPC分类号： H01L21/82

CPC分类号： G11C17/16 ,  G11C16/0483 ,  G11C17/18 ,  H01L27/115 ,  H01L27/11568

摘要： A nonvolatile storage device includes a plurality of bit lines 21 arranged in a column direction on a substrate; a plurality of word lines 35 arranged in a row direction on the substrate; a memory cell array 20 having a plurality of memory cells 31, where a store state of each of the memory cells 31 changes according to an electric signal relatively applied to the word line 35 and the bit line 21; a word line selection unit having a needle 51 relatively movable with respect to the substrate which comes into contact with one word line 35, setting the word line 35 in contact with the needle 51 to a selection state; and a sense amplifier 48 detecting through the bit line an electrical signal exhibiting the store state of the memory cell 31 to be connected to the word line.

摘要翻译： 非易失性存储装置包括在基板上沿列方向配置的多个位线21， 在基板上排列成行方向的多个字线35; 具有多个存储单元31的存储单元阵列20，其中每个存储单元31的存储状态根据相对于字线35和位线21的电信号而改变; 字线选择单元，其具有相对于与一条字线35接触的基板相对移动的针51，将与针51接触的字线35设定为选择状态; 以及读出放大器48，通过位线检测呈现要连接到字线的存储单元31的存储状态的电信号。

公开(公告)号：US07486553B2

公开(公告)日：2009-02-03

申请号：US11533648

申请日：2006-09-20

申请人： Yuichi Motoi ,  Katsuyuki Naito

发明人： Yuichi Motoi ,  Katsuyuki Naito

IPC分类号： G11C7/00

CPC分类号： G11C17/16 ,  G11C16/0483 ,  G11C17/18 ,  H01L27/115 ,  H01L27/11568

摘要： A nonvolatile storage device includes a plurality of bit lines 21 arranged in a column direction on a substrate; a plurality of word lines 35 arranged in a row direction on the substrate; a memory cell array 20 having a plurality of memory cells 31, where a store state of each of the memory cells 31 changes according to an electric signal relatively applied to the word line 35 and the bit line 21; a word line selection unit having a needle 51 relatively movable with respect to the substrate which comes into contact with one word line 35, setting the word line 35 in contact with the needle 51 to a selection state; and a sense amplifier 48 detecting through the bit line an electrical signal exhibiting the store state of the memory cell 31 to be connected to the word line.

摘要翻译： 非易失性存储装置包括在基板上沿列方向配置的多个位线21， 在基板上排列成行方向的多个字线35; 具有多个存储单元31的存储单元阵列20，其中每个存储单元31的存储状态根据相对于字线35和位线21的电信号而改变; 字线选择单元，其具有相对于与一条字线35接触的基板相对移动的针51，将与针51接触的字线35设定为选择状态; 以及读出放大器48，通过位线检测呈现要连接到字线的存储单元31的存储状态的电信号。

公开(公告)号：US07306743B2

公开(公告)日：2007-12-11

申请号：US11493807

申请日：2006-07-27

申请人： Hiroyuki Hieda ,  Masatoshi Sakurai ,  Koji Asakawa ,  Toshiro Hiraoka ,  Katsuyuki Naito

发明人： Hiroyuki Hieda ,  Masatoshi Sakurai ,  Koji Asakawa ,  Toshiro Hiraoka ,  Katsuyuki Naito

IPC分类号： B44C1/22 ,  G11B5/127

CPC分类号： G11B7/24079 ,  G11B5/74 ,  G11B5/746 ,  G11B5/855 ,  G11B7/24085 ,  G11B2005/0005 ,  Y10T29/49021 ,  Y10T29/49025 ,  Y10T428/24479 ,  Y10T428/24545 ,  Y10T428/2457 ,  Y10T428/24975

摘要： A recording medium includes a substrate, and a recording layer formed on the substrate having (a) a recording track band, and (b) recording cells regularly arrayed in the recording track band to form a plurality rows of sub-tracks. The recording cells included in each sub-track are formed apart from each other at a pitch P in the track direction. Nearest neighboring two recording cells, each positioned on adjacent two sub-tracks in the track band, are formed apart from each other at a pitch P/n in the track direction, where 2≦n≦5.

摘要翻译： 记录介质包括基板和形成在基板上的记录层，具有（a）记录轨道带，以及（b）定期排列在记录轨道带中的记录单元以形成多行子轨道。 包括在每个子轨道中的记录单元以轨道方向上的间距P彼此分开地形成。 最靠近的两个记录单元分别位于轨道带中相邻的两个子轨道上，以轨道方向上的间距P / n彼此分开，其中2 <= n <= 5。

公开(公告)号：US20060269795A1

公开(公告)日：2006-11-30

申请号：US11441340

申请日：2006-05-26

申请人： Yoshitaka Yanagita ,  Hiroyuki Hieda ,  Katsuyuki Naito

发明人： Yoshitaka Yanagita ,  Hiroyuki Hieda ,  Katsuyuki Naito

IPC分类号： G11B5/65 ,  B05D5/12

CPC分类号： G11B5/855

摘要： A magnetic recording media has a magnetic recording layer including recording track regions including recording cells of magnetic dots arrayed in a down-track direction and forming plural rows in a cross-track direction, and a nonmagnetic layer filled in recesses between the recording cells, and separation regions of a nonmagnetic layer, separating the recording track regions, and a lubricant applied to a surface of the magnetic recording layer, in which grooves are formed on a surface of the nonmagnetic layer in the separation regions so as to be recessed by 2 to 10 nm with respect to a surface of the nonmagnetic layer in the recording track regions, and in which the lubricant is applied to the surface of the magnetic recording layer so as to be filled in the grooves.

摘要翻译： 磁记录介质具有包括记录磁道区域的记录磁道区域，该记录磁道区域包括沿下行方向排列的磁点的记录单元，并且在横向方向上形成多个行，以及填充在记录单元之间的凹部中的非磁性层，以及 非磁性层的分离区域，分离记录轨道区域以及施加到磁记录层的表面的润滑剂，其中在分离区域中的非磁性层的表面上形成有凹槽，从而凹入2到 相对于记录轨道区域中的非磁性层的表面为10nm，并且其中将润滑剂施加到磁记录层的表面以便填充在凹槽中。

公开(公告)号：US20050079283A1

公开(公告)日：2005-04-14

申请号：US10958285

申请日：2004-10-06

申请人： Masatoshi Sakurai ,  Hiroyuki Hieda ,  Katsuyuki Naito

发明人： Masatoshi Sakurai ,  Hiroyuki Hieda ,  Katsuyuki Naito

IPC分类号： G11B5/00 ,  G11B5/65 ,  G11B5/738 ,  G11B5/74 ,  G11B5/84 ,  G11B5/842 ,  G11B5/855 ,  B05D5/12

CPC分类号： G11B5/855 ,  G11B5/746 ,  G11B5/82 ,  G11B2005/0002

摘要： A recording medium has a substrate and a recording layer having isolation regions including crossed linear regions and substantially polygonal sections defined by the crossed linear regions, each of the sections containing particles of a recording material arrayed in a regular lattice. The linear regions of the isolation regions are formed along lowest-indexed planes of the regular lattice formed by the particles of the recording material.

摘要翻译： 记录介质具有基板和具有隔离区域的记录层，隔离区域包括交叉线性区域和由交叉线性区域限定的基本上多边形的区域，每个区段包含排列成规则格子的记录材料的颗粒。 隔离区域的线性区域沿着由记录材料的颗粒形成的规则格子的最低索引平面形成。