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    PHASE CHANGE MEMORY AND MANUFACTURING METHOD THEREOF
    1.
    发明申请
    PHASE CHANGE MEMORY AND MANUFACTURING METHOD THEREOF 有权
    相变记忆及其制造方法

    公开(公告)号：US20080293183A1

    公开(公告)日：2008-11-27

    申请号：US12184428

    申请日：2008-08-01

    申请人： Takayuki TSUKAMOTO ,  Katsuyuki Naito ,  Sumio Ashida

    发明人： Takayuki TSUKAMOTO ,  Katsuyuki Naito ,  Sumio Ashida

    IPC分类号： H01L45/00

    CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/16 ,  Y10S438/90

    摘要： Even if sizes of storage cells are reduced in a phase change memory, properties of the respective storage cells can be set to be approximately equal to one another and a current amount required for phase change can be reduced sufficiently. The phase change memory includes at least a storage cell. The storage cell includes a first electrode, an electrically conductive portion provided on the first electrode and having at least two electrically conductive bodies with approximately the same shape provided on the first electrode, the electrically conductive bodies being spaced by a high resistance film with a high resistance, a recording layer provided on the electrically conductive portion and having phase change material which can change between a first phase state with a first specific resistance and a second phase state with a second specific resistance different from the first specific resistance, and a second electrode provided on the recording layer.

    摘要翻译： 即使存储单元的尺寸在相变存储器中减少，各个存储单元的特性可以被设置为大致相等，并且可以充分地减少相变所需的电流量。 相变存储器至少包括存储单元。 存储单元包括第一电极，设置在第一电极上的导电部分，并且具有至少两个导电体，其具有设置在第一电极上的大致相同的形状，导电体由高电阻膜隔开，高电阻 电阻，设置在导电部分上并具有能够在具有第一电阻率的第一相位状态与第二相位状态之间变化的相变材料的记录层，其具有不同于第一电阻率的第二电阻率;以及第二电极 提供在记录层上。

    Phase change memory including a plurality of electrically conductive bodies, and manufacturing method thereof
    2.
    发明授权
    Phase change memory including a plurality of electrically conductive bodies, and manufacturing method thereof 有权
    包括多个导电体的相变存储器及其制造方法

    公开(公告)号：US07883930B2

    公开(公告)日：2011-02-08

    申请号：US12184428

    申请日：2008-08-01

    申请人： Takayuki Tsukamoto ,  Katsuyuki Naito ,  Sumio Ashida

    发明人： Takayuki Tsukamoto ,  Katsuyuki Naito ,  Sumio Ashida

    IPC分类号： H01L21/00

    CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/16 ,  Y10S438/90

    摘要： A phase change memory including at least a storage cell which includes a first electrode, an electrically conductive portion provided on the first electrode and having at least two electrically conductive bodies with approximately the same shape provided on the first electrode, the electrically conductive bodies being spaced by a high resistance film with a high resistance, a recording layer provided on the electrically conductive portion and having phase change material which can change between a first phase state with a first specific resistance and a second phase state with a second specific resistance different from the first specific resistance, and a second electrode provided on the recording layer.

    摘要翻译： 一种相变存储器，至少包括存储单元，该存储单元包括第一电极，设置在第一电极上的导电部分，并且具有设置在第一电极上的具有大致相同形状的至少两个导电体，导电体间隔开 通过具有高电阻的高电阻膜，设置在导电部分上并具有相变材料的记录层，其可以在具有第一电阻率的第一相位状态和第二相位状态之间变化，具有不同于第二电阻率的第二电阻率 第一电阻率和设置在记录层上的第二电极。

    Phase change memory and manufacturing method thereof
    3.
    发明申请
    Phase change memory and manufacturing method thereof 审中-公开
    相变记忆及其制造方法

    公开(公告)号：US20060261379A1

    公开(公告)日：2006-11-23

    申请号：US11272751

    申请日：2005-11-15

    申请人： Takayuki Tsukamoto ,  Katsuyuki Naito ,  Sumio Ashida

    发明人： Takayuki Tsukamoto ,  Katsuyuki Naito ,  Sumio Ashida

    IPC分类号： H01L29/768

    CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1273 ,  H01L45/144 ,  H01L45/16 ,  Y10S438/90

    摘要： Even if sizes of storage cells are reduced in a phase change memory, properties of the respective storage cells can be set to be approximately equal to one another and a current amount required for phase change can be reduced sufficiently. The phase change memory includes at least a storage cell. The storage cell includes a first electrode, an electrically conductive portion provided on the first electrode and having at least two electrically conductive bodies with approximately the same shape provided on the first electrode, the electrically conductive bodies being spaced by a high resistance film with a high resistance, a recording layer provided on the electrically conductive portion and having phase change material which can change between a first phase state with a first specific resistance and a second phase state with a second specific resistance different from the first specific resistance, and a second electrode provided on the recording layer.

    摘要翻译： 即使存储单元的尺寸在相变存储器中减少，各个存储单元的特性可以被设置为大致相等，并且可以充分地减少相变所需的电流量。 相变存储器至少包括存储单元。 存储单元包括第一电极，设置在第一电极上的导电部分，并且具有至少两个导电体，其具有设置在第一电极上的大致相同的形状，导电体由高电阻膜隔开，高电阻 电阻，设置在导电部分上并具有能够在具有第一电阻率的第一相位状态与第二相位状态之间变化的相变材料的记录层，其具有不同于第一电阻率的第二电阻率;以及第二电极 提供在记录层上。

    Optical recording medium and optical recording-reproducing method
    7.
    发明授权
    Optical recording medium and optical recording-reproducing method 失效
    光记录介质和光记录再现方法

    公开(公告)号：US07245576B2

    公开(公告)日：2007-07-17

    申请号：US10758481

    申请日：2004-01-16

    申请人： Katsutaro Ichihara ,  Sumio Ashida ,  Keiichiro Yusu ,  Kenji Todori ,  Takayuki Tsukamoto

    发明人： Katsutaro Ichihara ,  Sumio Ashida ,  Keiichiro Yusu ,  Kenji Todori ,  Takayuki Tsukamoto

    IPC分类号： G11B7/24

    CPC分类号： B82Y10/00 ,  G11B7/00454 ,  G11B7/00456 ,  G11B7/005 ,  G11B7/242 ,  G11B7/243 ,  G11B7/253 ,  G11B7/257 ,  G11B7/261 ,  G11B7/268

    摘要： An optical recording medium includes an optical recording layer, a separating layer formed on a reproducing light incident side of the optical recording layer, and a phase-change reproducing layer formed on the reproducing light incident side of the separating layer, absorbance of which phase-change reproducing layer is changed depending on whether a state of the optical recording layer is a recording mark or a space. A transfer portion to which a state of the optical recording layer is transferred is formed in a portion having high absorbance of the phase-change reproducing layer by irradiation with reproducing light, while a portion of the phase-change reproducing layer other than the transfer portion is kept in a state optically differing from the transfer portion.

    摘要翻译： 光记录介质包括光记录层，形成在光记录层的再现光入射侧的分离层和形成在分离层的再现光入射侧的相变再现层， 改变再现层根据光学记录层的状态是记录标记还是空间而改变。 通过照射再生光，在相变再生层的吸光度高的部分形成转印了光记录层的状态的转印部分，而转印部分以外的相变再生层的一部分 保持在与转印部分光学不同的状态。