Invention Grant
- Patent Title: Structure of MTCMOS cell
- Patent Title (中): MTCMOS细胞的结构
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Application No.: US12183190Application Date: 2008-07-31
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Publication No.: US07884424B2Publication Date: 2011-02-08
- Inventor: Dong-Hun Kim
- Applicant: Dong-Hun Kim
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Sherr & Vaughn, PLLC
- Priority: KR10-2007-0112209 20071105
- Main IPC: H01L29/76
- IPC: H01L29/76

Abstract:
An architecture of the layout of the MTCMOS standard cell designed for low power consumption is supplemented so that the pick-up cells are included in the power line of the MTCMOS cell. Therefore, when the logic circuit is constructed using the library layout of the MTCMOS cell in which the related pick-up cells are not included, pick-up cells consisting of only the ends of the pick-up cells are not needed every 50 μm during the placement of the MTCMOS standard cell. The flexibility of the cell placement may thereby be improved. In addition, since additional space for the pick-up cells is not required, the size of the MTCMOS may be reduced, saving space on the semiconductor substrate.
Public/Granted literature
- US20090114994A1 STRUCTURE OF MTCMOS CELL AND METHOD FOR FABRICATING THE MTCMOS CELL Public/Granted day:2009-05-07
Information query
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