发明授权
US07887637B2 Method for cleaning treatment chamber in substrate treating apparatus and method for detecting endpoint of cleaning
失效
在基板处理装置中清洗处理室的方法和用于检测清洗终点的方法
- 专利标题： Method for cleaning treatment chamber in substrate treating apparatus and method for detecting endpoint of cleaning
- 专利标题（中）： 在基板处理装置中清洗处理室的方法和用于检测清洗终点的方法
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申请号： US10589511申请日： 2005-02-17
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公开(公告)号： US07887637B2公开(公告)日： 2011-02-15
- 发明人: Shigenori Ozaki , Hideyuki Noguchi , Yoshiro Kabe , Kazuhiro Isa , Masaru Sasaki
- 申请人： Shigenori Ozaki , Hideyuki Noguchi , Yoshiro Kabe , Kazuhiro Isa , Masaru Sasaki
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2004-043449 20040219; JP2004-326316 20041110; JP2004-334552 20041118
- 国际申请： PCT/JP2005/002394 WO 20050217
- 国际公布： WO2005/081302 WO 20050901
- 主分类号： C25F1/00
- IPC分类号： C25F1/00 ; C25F3/30 ; C25F5/00
摘要：
In a substrate processing apparatus for performing a plasma process on a substrate including a tungsten-containing film, cleaning is performed for a process chamber. This cleaning includes, after the plasma process, supplying a gas containing O2 into the process chamber without setting the process chamber opened to the atmosphere, and generating plasma of the gas to clean the process chamber.