公开(公告)号：US08882962B2

公开(公告)日：2014-11-11

申请号：US13075557

申请日：2011-03-30

申请人： Jun Yamashita ,  Kazuhiro Isa ,  Hideo Nakamura ,  Junichi Kitagawa

发明人： Jun Yamashita ,  Kazuhiro Isa ,  Hideo Nakamura ,  Junichi Kitagawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  C23C16/44 ,  H01J37/32 ,  C23C16/509 ,  C23C16/455

CPC分类号： H01J37/32559 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32192

摘要： Provided is a plasma processing apparatus wherein an electrode embedded in a mounting table is supplied with high frequency power for biasing. A surface, which is exposed to plasma and is of an aluminum cover functioning as an opposite electrode to the electrode of the mounting table, is coated with a protection film, preferably a Y2O3 film. A second portion forming an upper side portion of the processing chamber and a first portion forming a lower side portion of the processing container are provided with an insulating upper liner and an insulating lower liner thicker than the upper liner, respectively. Thus, undesirable short-circuits and abnormal electrical discharge are prevented and stable high-frequency current path is formed.

摘要翻译： 提供了一种等离子体处理装置，其中嵌入在安装台中的电极被提供用于偏置的高频功率。 暴露于等离子体并且是作为与安装台的电极相对的电极的铝盖的表面涂覆有保护膜，优选Y 2 O 3膜。 形成处理室的上侧部分的第二部分和形成处理容器的下侧部分的第一部分分别设置有比上部衬套更厚的绝缘上衬垫和绝缘下衬套。 因此，防止了不期望的短路和异常放电，并且形成稳定的高频电流路径。

公开(公告)号：US20110174441A1

公开(公告)日：2011-07-21

申请号：US13075557

申请日：2011-03-30

申请人： Jun YAMASHITA ,  Kazuhiro Isa ,  Hideo Nakamura ,  Junichi Kitagawa

发明人： Jun YAMASHITA ,  Kazuhiro Isa ,  Hideo Nakamura ,  Junichi Kitagawa

IPC分类号： H01L21/3065 ,  C23C16/511

CPC分类号： H01J37/32559 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32192

摘要： Provided is a plasma processing apparatus wherein an electrode embedded in a mounting table is supplied with high frequency power for biasing. A surface, which is exposed to plasma and is of an aluminum cover functioning as an opposite electrode to the electrode of the mounting table, is coated with a protection film, preferably a Y2O3 film. A second portion forming an upper side portion of the processing chamber and a first portion forming a lower side portion of the processing container are provided with an insulating upper liner and an insulating lower liner thicker than the upper liner, respectively. Thus, undesirable short-circuits and abnormal electrical discharge are prevented and stable high-frequency current path is formed.

摘要翻译： 提供了一种等离子体处理装置，其中嵌入在安装台中的电极被提供用于偏置的高频功率。 暴露于等离子体并且是作为与安装台的电极相对的电极的铝盖的表面涂覆有保护膜，优选Y 2 O 3膜。 形成处理室的上侧部分的第二部分和形成处理容器的下侧部分的第一部分分别设置有比上部衬套更厚的绝缘上衬垫和绝缘下衬套。 因此，防止了不期望的短路和异常放电，并且形成稳定的高频电流路径。

公开(公告)号：US20100029093A1

公开(公告)日：2010-02-04

申请号：US12443552

申请日：2007-09-27

申请人： Toshihiko Shiozawa ,  Yoshiro Kabe ,  Takashi Kobayashi ,  Junichi Kitagawa ,  Kazuhiro Isa

发明人： Toshihiko Shiozawa ,  Yoshiro Kabe ,  Takashi Kobayashi ,  Junichi Kitagawa ,  Kazuhiro Isa

IPC分类号： H01L21/316 ,  C23C16/513

CPC分类号： H01L21/76229 ,  H01J37/32192 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/31662 ,  H01L21/7621

摘要： A silicon oxide film forming method includes a step of placing an object to be processed and having a surface having a projecting/recessed pattern and containing silicon in a processing vessel of a plasma processing apparatus, a step of producing a plasma from a processing gas containing oxygen at a proportion of 5 to 20% under a processing pressure of 267 to 400 Pa in the processing vessel, and a step of forming a silicon oxide film by oxidizing silicon in the surface of the object to be processed by the plasma.

摘要翻译： 氧化硅膜形成方法包括将待处理物体放置在等离子体处理装置的处理容器中的具有突出/凹陷图案并含有硅的表面的步骤，从处理气体产生等离子体的步骤，所述处理气体含有 处理容器中处理压力为267〜400Pa的比例为5〜20％的氧，以及通过在被处理物的表面氧化等离子体而形成氧化硅膜的工序。

公开(公告)号：US20070163617A1

公开(公告)日：2007-07-19

申请号：US10589511

申请日：2005-02-17

申请人： Shigenori Ozaki ,  Hideyuki Noguchi ,  Yoshiro Kabe ,  Kazuhiro Isa ,  Masaru Sasaki

发明人： Shigenori Ozaki ,  Hideyuki Noguchi ,  Yoshiro Kabe ,  Kazuhiro Isa ,  Masaru Sasaki

IPC分类号： B08B6/00 ,  B08B9/00 ,  G06F19/00 ,  C23F1/00 ,  C23C16/00

CPC分类号： H01J37/32935 ,  B08B7/0035 ,  H01J37/32192 ,  H01J37/32862

摘要： In a substrate processing apparatus for performing a plasma process on a substrate including a tungsten-containing film, cleaning is performed for a process chamber. This cleaning includes, after the plasma process, supplying a gas containing O2 into the process chamber without setting the process chamber opened to the atmosphere, and generating plasma of the gas to clean the process chamber.

摘要翻译： 在用于在含有含钨膜的基板上进行等离子体处理的基板处理装置中，对处理室进行清洗。 该清洁包括在等离子体处理之后，将含有O 2 2的气体供应到处理室中，而不将处理室设置为对大气开放，并产生气体的等离子体以清洁处理室。

公开(公告)号：US20120094505A1

公开(公告)日：2012-04-19

申请号：US13376678

申请日：2010-07-26

申请人： Hideo Nakamura ,  Yoshiro Kabe ,  Kazuhiro Isa ,  Junichi Kitagawa

发明人： Hideo Nakamura ,  Yoshiro Kabe ,  Kazuhiro Isa ,  Junichi Kitagawa

IPC分类号： H01L21/316 ,  B05C11/00 ,  C23C16/50

CPC分类号： H01L21/28247 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/02238 ,  H01L21/02252 ,  H01L29/40117 ,  H01L29/66833

摘要： A selective oxidation treatment method in which plasma of a hydrogen gas and an oxygen containing gas is allowed to act on an object to be treated, and in which silicon and a metallic material are exposed in the surface, within a treatment container of a plasma treatment apparatus comprises: after the supply of the hydrogen gas from a hydrogen gas supply source is initiated by using a first inert gas, which passes through a first supply path, as a carrier gas, initiating the supply of the oxygen containing gas from an oxygen containing gas supply source by using a second inert gas, which passes through a second supply path, as a carrier gas before the plasma is ignited; igniting the plasma of a treatment gas including the oxygen containing gas and the hydrogen gas within the treatment container; and selectively oxidizing the silicon by the plasma.

摘要翻译： 一种选择性氧化处理方法，其中允许氢气和含氧气体的等离子体在等离子体处理的处理容器内作用于被处理物体，并且其中硅和金属材料暴露在表面中 装置包括：在通过使用通过第一供应路径的第一惰性气体作为载气开始从氢气供应源供应氢气之后，开始从含氧气体供应含氧气体 在等离子体点燃之前通过使用通过第二供给路径的第二惰性气体作为载气的气体供给源; 点燃处理容器内包含含氧气体和氢气的处理气体的等离子体; 并通过等离子体选择性地氧化硅。

公开(公告)号：US07887637B2

公开(公告)日：2011-02-15

申请号：US10589511

申请日：2005-02-17

申请人： Shigenori Ozaki ,  Hideyuki Noguchi ,  Yoshiro Kabe ,  Kazuhiro Isa ,  Masaru Sasaki

发明人： Shigenori Ozaki ,  Hideyuki Noguchi ,  Yoshiro Kabe ,  Kazuhiro Isa ,  Masaru Sasaki

IPC分类号： C25F1/00 ,  C25F3/30 ,  C25F5/00

CPC分类号： H01J37/32935 ,  B08B7/0035 ,  H01J37/32192 ,  H01J37/32862

摘要： In a substrate processing apparatus for performing a plasma process on a substrate including a tungsten-containing film, cleaning is performed for a process chamber. This cleaning includes, after the plasma process, supplying a gas containing O2 into the process chamber without setting the process chamber opened to the atmosphere, and generating plasma of the gas to clean the process chamber.

摘要翻译： 在用于在含有含钨膜的基板上进行等离子体处理的基板处理装置中，对处理室进行清洗。 这种清洁包括在等离子体处理之后，将含有O 2的气体供应到处理室中，而不将处理室设置为对大气开放，并且产生气体的等离子体以清洁处理室。