发明授权
- 专利标题： Semiconductor integrated circuit device
- 专利标题（中）： 半导体集成电路器件
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申请号： US12362995申请日： 2009-01-30
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公开(公告)号： US07893505B2公开(公告)日： 2011-02-22
- 发明人: Akio Nishida , Yasuko Yoshida , Shuji Ikeda
- 申请人： Akio Nishida , Yasuko Yoshida , Shuji Ikeda
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 优先权： JP2001-022132 20010130
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L21/8244
摘要：
In order to provide a semiconductor integrated circuit device such as a high-performance semiconductor integrated circuit device capable of reducing a soft error developed in each memory cell of a SRAM, the surface of a wiring of a cross-connecting portion, of a SRAM memory cell having a pair of n-channel type MISFETs whose gate electrodes and drains are respectively cross-connected, is formed in a shape that protrudes from the surface of a silicon oxide film. A silicon nitride film used as a capacitive insulating film, and an upper electrode are formed on the wiring. A capacitance can be formed of the wiring, the silicon nitride film and the upper electrode.
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