Invention Grant
- Patent Title: Passivation layer for a circuit device and method of manufacture
- Patent Title (中): 电路器件的钝化层及其制造方法
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Application No.: US12691216Application Date: 2010-01-21
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Publication No.: US07902083B2Publication Date: 2011-03-08
- Inventor: John M. Bedinger , Michael A. Moore , Robert B. Hallock , Kamal Tabatabaie Alavi , Thomas E. Kazior
- Applicant: John M. Bedinger , Michael A. Moore , Robert B. Hallock , Kamal Tabatabaie Alavi , Thomas E. Kazior
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Agency: Baker Botts L.L.P.
- Main IPC: H01L21/469
- IPC: H01L21/469 ; H01L21/31 ; H01L23/58 ; H01L21/76

Abstract:
According to one embodiment of the disclosure, a method for passivating a circuit device generally includes providing a substrate having a substrate surface, forming an electrical component on the substrate surface, and coating the substrate surface and the electrical component with a first protective dielectric layer. The first protective dielectric layer is made of a generally moisture insoluble material having a moisture permeability less than 0.01 gram/meter2/day, a moisture absorption less than 0.04 percent, a dielectric constant less than 10, a dielectric loss less than 0.005, a breakdown voltage strength greater than 8 million volts/centimeter, a sheet resistivity greater than 1015 ohm-centimeter, and a defect density less than 0.5/centimeter2.
Public/Granted literature
- US20100120254A1 Passivation Layer for a Circuit Device and Method of Manufacture Public/Granted day:2010-05-13
Information query
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