发明授权
- 专利标题： Passivation layer for a circuit device and method of manufacture
- 专利标题（中）： 电路器件的钝化层及其制造方法
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申请号： US12691216申请日： 2010-01-21
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公开(公告)号： US07902083B2公开(公告)日： 2011-03-08
- 发明人: John M. Bedinger , Michael A. Moore , Robert B. Hallock , Kamal Tabatabaie Alavi , Thomas E. Kazior
- 申请人： John M. Bedinger , Michael A. Moore , Robert B. Hallock , Kamal Tabatabaie Alavi , Thomas E. Kazior
- 申请人地址： US MA Waltham
- 专利权人： Raytheon Company
- 当前专利权人： Raytheon Company
- 当前专利权人地址： US MA Waltham
- 代理机构： Baker Botts L.L.P.
- 主分类号： H01L21/469
- IPC分类号： H01L21/469 ; H01L21/31 ; H01L23/58 ; H01L21/76
摘要：
According to one embodiment of the disclosure, a method for passivating a circuit device generally includes providing a substrate having a substrate surface, forming an electrical component on the substrate surface, and coating the substrate surface and the electrical component with a first protective dielectric layer. The first protective dielectric layer is made of a generally moisture insoluble material having a moisture permeability less than 0.01 gram/meter2/day, a moisture absorption less than 0.04 percent, a dielectric constant less than 10, a dielectric loss less than 0.005, a breakdown voltage strength greater than 8 million volts/centimeter, a sheet resistivity greater than 1015 ohm-centimeter, and a defect density less than 0.5/centimeter2.
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