发明授权
US07920192B2 Photoelectric conversion device with a pixel region and a peripheral circuit region sharing a same substrate
有权
具有像素区域和共用相同基板的外围电路区域的光电转换装置
- 专利标题： Photoelectric conversion device with a pixel region and a peripheral circuit region sharing a same substrate
- 专利标题（中）： 具有像素区域和共用相同基板的外围电路区域的光电转换装置
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申请号： US11774270申请日： 2007-07-06
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公开(公告)号： US07920192B2公开(公告)日： 2011-04-05
- 发明人: Takanori Watanabe , Tetsuya Itano , Hidekazu Takahashi , Shunsuke Takimoto , Kotaro Abukawa , Hiroaki Naruse , Shigeru Nishimura , Masatsugu Itahashi
- 申请人： Takanori Watanabe , Tetsuya Itano , Hidekazu Takahashi , Shunsuke Takimoto , Kotaro Abukawa , Hiroaki Naruse , Shigeru Nishimura , Masatsugu Itahashi
- 申请人地址： JP Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JP Tokyo
- 代理机构： Fitzpatrick, Cella, Harper & Scinto
- 优先权： JP2006-210531 20060802
- 主分类号： H04N5/335
- IPC分类号： H04N5/335
摘要：
A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.
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