公开(公告)号：US20110003426A1

公开(公告)日：2011-01-06

申请号：US12881582

申请日：2010-09-14

申请人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

发明人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

IPC分类号： H01L31/18

CPC分类号： H01L27/14616 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14689

摘要： A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

摘要翻译： 光电转换装置包括具有多个光电转换元件的光电转换区域和被配置为响应每个光电转换元件的电荷读取信号的第一MOS晶体管; 以及具有第二MOS晶体管的外围电路区域，被配置为驱动第一MOS晶体管和/或放大从光电转换区域读取的信号，光电转换区域和外围电路区域位于同一半导体衬底上，其中杂质 第一MOS晶体管的漏极中的浓度低于第二MOS晶体管的漏极中的杂质浓度。

公开(公告)号：US07920192B2

公开(公告)日：2011-04-05

申请号：US11774270

申请日：2007-07-06

申请人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

发明人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

IPC分类号： H04N5/335

CPC分类号： H01L27/14616 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14689

摘要： A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

摘要翻译： 光电转换装置包括具有多个光电转换元件的光电转换区域和被配置为响应每个光电转换元件的电荷读取信号的第一MOS晶体管; 以及具有第二MOS晶体管的外围电路区域，被配置为驱动第一MOS晶体管和/或放大从光电转换区域读取的信号，光电转换区域和外围电路区域位于同一半导体衬底上，其中杂质 第一MOS晶体管的漏极中的浓度低于第二MOS晶体管的漏极中的杂质浓度。

公开(公告)号：US08411187B2

公开(公告)日：2013-04-02

申请号：US13040607

申请日：2011-03-04

申请人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

发明人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

IPC分类号： H04N3/14 ,  H01L31/062

CPC分类号： H01L27/14616 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14689

摘要： A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

摘要翻译： 光电转换装置包括具有多个光电转换元件的光电转换区域和被配置为响应每个光电转换元件的电荷读取信号的第一MOS晶体管; 以及具有第二MOS晶体管的外围电路区域，被配置为驱动第一MOS晶体管和/或放大从光电转换区域读取的信号，光电转换区域和外围电路区域位于同一半导体衬底上，其中杂质 第一MOS晶体管的漏极中的浓度低于第二MOS晶体管的漏极中的杂质浓度。

公开(公告)号：US20110157447A1

公开(公告)日：2011-06-30

申请号：US13040607

申请日：2011-03-04

申请人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

发明人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

IPC分类号： H04N5/335

CPC分类号： H01L27/14616 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14689

摘要： A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

公开(公告)号：US20080029793A1

公开(公告)日：2008-02-07

申请号：US11774270

申请日：2007-07-06

申请人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

发明人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

IPC分类号： H01L31/0232

CPC分类号： H01L27/14616 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14689

摘要： A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

摘要翻译： 光电转换装置包括具有多个光电转换元件的光电转换区域和被配置为响应每个光电转换元件的电荷读取信号的第一MOS晶体管; 以及具有第二MOS晶体管的外围电路区域，被配置为驱动第一MOS晶体管和/或放大从光电转换区域读取的信号，光电转换区域和外围电路区域位于同一半导体衬底上，其中杂质 第一MOS晶体管的漏极中的浓度低于第二MOS晶体管的漏极中的杂质浓度。

公开(公告)号：US07982789B2

公开(公告)日：2011-07-19

申请号：US12168506

申请日：2008-07-07

申请人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi

发明人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi

IPC分类号： H04N5/335

CPC分类号： H04N9/045

摘要： Since pixel signals are not only added in the row direction but also averaged in the column direction, it is possible to sufficiently increase the frame rate even when the number of pixels increases. Additionally, since the spatial centers of gravity of the added or averaged signals are arranged at equal intervals in a Bayer array, it is possible to reduce false color (moiré) generation and suppress the decrease in the spatial resolution.

摘要翻译： 由于像素信号不仅在行方向上相加，而且在列方向上被平均化，所以即使像素数增加，也可以充分提高帧速率。 此外，由于相加或平均信号的空间重心在拜耳阵列中以相等的间隔排列，所以可以减少假色（莫尔）的产生并抑制空间分辨率的降低。

公开(公告)号：US20090015699A1

公开(公告)日：2009-01-15

申请号：US12168506

申请日：2008-07-07

申请人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi

发明人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi

IPC分类号： H04N5/335

CPC分类号： H04N9/045

摘要： Since pixel signals are not only added in the row direction but also averaged in the column direction, it is possible to sufficiently increase the frame rate even when the number of pixels increases. Additionally, since the spatial centers of gravity of the added or averaged signals are arranged at equal intervals in a Bayer array, it is possible to reduce false color (moiré) generation and suppress the decrease in the spatial resolution.

摘要翻译： 由于像素信号不仅在行方向上相加，而且在列方向上被平均化，所以即使像素数增加，也可以充分提高帧速率。 此外，由于相加或平均信号的空间重心在拜耳阵列中以相等的间隔排列，所以可以减少假色（莫尔）的产生并抑制空间分辨率的降低。

公开(公告)号：US07952634B2

公开(公告)日：2011-05-31

申请号：US12244379

申请日：2008-10-02

申请人： Tomoyuki Noda ,  Tetsuya Itano ,  Koichiro Iwata ,  Hidekazu Takahashi

发明人： Tomoyuki Noda ,  Tetsuya Itano ,  Koichiro Iwata ,  Hidekazu Takahashi

IPC分类号： H04N5/335

CPC分类号： H04N5/23248 ,  H04N5/23274 ,  H04N5/345 ,  H04N5/361 ,  H04N5/3658 ,  H04N5/376 ,  H04N5/3765

摘要： An image sensing apparatus includes a pixel array including an optical black region and effective pixel region, and a scanning unit which scans the pixel array. The scanning unit includes a first shift register which scans the optical black region by a shift operation, and a second shift register which scans the effective pixel region by a shift operation. The second shift register starts the shift operation during a first period when the first shift register scans the optical black region, and scans a readout region serving as a partial region of the effective pixel region during a second period following the first period.

摘要翻译： 图像感测装置包括具有光学黑色区域和有效像素区域的像素阵列和扫描像素阵列的扫描单元。 扫描单元包括通过移位操作扫描光学黑色区域的第一移位寄存器和通过移位操作扫描有效像素区域的第二移位寄存器。 第二移位寄存器在第一移位寄存器扫描光学黑区域的第一周期期间开始移位操作，并且在第一周期之后的第二周期期间扫描用作有效像素区域的部分区域的读出区域。

公开(公告)号：US08355066B2

公开(公告)日：2013-01-15

申请号：US13417960

申请日：2012-03-12

申请人： Koichiro Iwata ,  Tetsuya Itano ,  Hidekazu Takahashi

发明人： Koichiro Iwata ,  Tetsuya Itano ,  Hidekazu Takahashi

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H04N5/376 ,  H04N5/2327 ,  H04N5/3532

摘要： A solid-state imaging apparatus includes: a pixel region including a plurality of pixels, each including a photoelectric conversion element, arranged in matrix, and a reset switch for discharging electric charge of the photoelectric conversion element; and a first scanning circuit for supplying a reset control signal for controlling an operation of the reset switch, the pixel region and the first scanning circuit being formed on a semiconductor substrate, in which the pixel region includes a first pixel region and a second pixel region, and the first scanning circuit includes a first decoder for controlling the operation of the reset switch arranged in the first pixel region, and a second decoder for controlling the operation of the reset switch arranged in the second pixel region.

摘要翻译： 固态成像装置包括：包括多个像素的像素区域，每个像素包括矩阵布置的光电转换元件和用于放电光电转换元件的电荷的复位开关; 以及第一扫描电路，用于提供用于控制复位开关的操作的复位控制信号，像素区域和第一扫描电路形成在半导体衬底上，其中像素区域包括第一像素区域和第二像素区域 并且第一扫描电路包括用于控制布置在第一像素区域中的复位开关的操作的第一解码器和用于控制布置在第二像素区域中的复位开关的操作的第二解码器。

公开(公告)号：US20110199524A1

公开(公告)日：2011-08-18

申请号：US13093934

申请日：2011-04-26

申请人： Tomoyuki Noda ,  Tetsuya Itano ,  Koichiro Iwata ,  Hidekazu Takahashi

发明人： Tomoyuki Noda ,  Tetsuya Itano ,  Koichiro Iwata ,  Hidekazu Takahashi

IPC分类号： H04N5/335

CPC分类号： H04N5/23248 ,  H04N5/23274 ,  H04N5/345 ,  H04N5/361 ,  H04N5/3658 ,  H04N5/376 ,  H04N5/3765

摘要： An image sensing apparatus includes a pixel array including an optical black region and effective pixel region, and a scanning unit which scans the pixel array. The scanning unit includes a first shift register which scans the optical black region by a shift operation, and a second shift register which scans the effective pixel region by a shift operation. The second shift register starts the shift operation during a first period when the first shift register scans the optical black region, and scans a readout region serving as a partial region of the effective pixel region during a second period following the first period.

摘要翻译： 图像感测装置包括具有光学黑色区域和有效像素区域的像素阵列和扫描像素阵列的扫描单元。 扫描单元包括通过移位操作扫描光学黑色区域的第一移位寄存器和通过移位操作扫描有效像素区域的第二移位寄存器。 第二移位寄存器在第一移位寄存器扫描光学黑区域的第一周期期间开始移位操作，并且在第一周期之后的第二周期期间扫描用作有效像素区域的部分区域的读出区域。