Invention Grant
- Patent Title: Plasma processing apparatus and plasma processing method
- Patent Title (中): 等离子体处理装置和等离子体处理方法
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Application No.: US11762472Application Date: 2007-06-13
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Publication No.: US07934468B2Publication Date: 2011-05-03
- Inventor: Takahiro Horiguchi
- Applicant: Takahiro Horiguchi
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-165176 20060614
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23F1/00 ; H01L21/306

Abstract:
Microwaves propagated through the waveguide 30, a plurality of slots 31 and the dielectric members 33 in this order are supplied into the processing chamber U where they are used to excite a gas to plasma to be used to process a substrate G. Alumina 50 fills an area inside the waveguide 30 near an end surface C thereof, and the remaining area inside the waveguide is filled with Teflon 35. Since the alumina 50 has a smaller guide wavelength λg compared to the Teflon 35, the mechanical length measured from the end surface C of the waveguide 30 to the center of the closest slot is reduced compared to the mechanical length of a waveguide filled only with Teflon 35 while maintaining the physical characteristic length from the end surface C to the closest slot center at λg/4.
Public/Granted literature
- US20070289533A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD Public/Granted day:2007-12-20
Information query
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