发明授权
- 专利标题： Non-volatile memory devices and methods of fabricating the same
- 专利标题（中）： 非易失性存储器件及其制造方法
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申请号： US11403902申请日： 2006-04-14
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公开(公告)号： US07936044B2公开(公告)日： 2011-05-03
- 发明人: Dong Chul Kim , In-kyeong Yoo , Myoung-jae Lee , Sun-ae Seo , In-gyu Baek , Seung-eon Ahn , Byoung-ho Park , Young-kwan Cha , Sang-jin Park
- 申请人： Dong Chul Kim , In-kyeong Yoo , Myoung-jae Lee , Sun-ae Seo , In-gyu Baek , Seung-eon Ahn , Byoung-ho Park , Young-kwan Cha , Sang-jin Park
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2005-0108125 20051111
- 主分类号： H01L29/00
- IPC分类号： H01L29/00
摘要：
A memory device may include a switching device and a storage node coupled with the switching device. The storage node may include a first electrode, a second electrode, a data storage layer and at least one contact layer. The data storage layer may be disposed between the first electrode and the second electrode and may include a transition metal oxide or aluminum oxide. The at least one contact layer may be disposed at least one of above or below the data storage layer and may include a conductive metal oxide.