公开(公告)号：US07936044B2

公开(公告)日：2011-05-03

申请号：US11403902

申请日：2006-04-14

申请人： Dong Chul Kim ,  In-kyeong Yoo ,  Myoung-jae Lee ,  Sun-ae Seo ,  In-gyu Baek ,  Seung-eon Ahn ,  Byoung-ho Park ,  Young-kwan Cha ,  Sang-jin Park

发明人： Dong Chul Kim ,  In-kyeong Yoo ,  Myoung-jae Lee ,  Sun-ae Seo ,  In-gyu Baek ,  Seung-eon Ahn ,  Byoung-ho Park ,  Young-kwan Cha ,  Sang-jin Park

IPC分类号： H01L29/00

CPC分类号： H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146

摘要： A memory device may include a switching device and a storage node coupled with the switching device. The storage node may include a first electrode, a second electrode, a data storage layer and at least one contact layer. The data storage layer may be disposed between the first electrode and the second electrode and may include a transition metal oxide or aluminum oxide. The at least one contact layer may be disposed at least one of above or below the data storage layer and may include a conductive metal oxide.

摘要翻译： 存储器件可以包括与开关器件耦合的开关器件和存储节点。 存储节点可以包括第一电极，第二电极，数据存储层和至少一个接触层。 数据存储层可以设置在第一电极和第二电极之间，并且可以包括过渡金属氧化物或氧化铝。 至少一个接触层可以设置在数据存储层的上方或下方的至少一个上，并且可以包括导电金属氧化物。

公开(公告)号：US20070120580A1

公开(公告)日：2007-05-31

申请号：US11403902

申请日：2006-04-14

申请人： Dong Kim ,  In-kyeong Yoo ,  Myoung-jae Lee ,  Sun-ae Seo ,  In-gyu Baek ,  Seung-eon Ahn ,  Byoung-ho Park ,  Young-kwan Cha ,  Sang-jin Park

发明人： Dong Kim ,  In-kyeong Yoo ,  Myoung-jae Lee ,  Sun-ae Seo ,  In-gyu Baek ,  Seung-eon Ahn ,  Byoung-ho Park ,  Young-kwan Cha ,  Sang-jin Park

IPC分类号： H03K19/00

CPC分类号： H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146

摘要： A memory device may include a switching device and a storage node coupled with the switching device. The storage node may include a first electrode, a second electrode, a data storage layer and at least one contact layer. The data storage layer may be disposed between the first electrode and the second electrode and may include a transition metal oxide or aluminum oxide. The at least one contact layer may be disposed at least one of above or below the data storage layer and may include a conductive metal oxide.

摘要翻译： 存储器件可以包括与开关器件耦合的开关器件和存储节点。 存储节点可以包括第一电极，第二电极，数据存储层和至少一个接触层。 数据存储层可以设置在第一电极和第二电极之间，并且可以包括过渡金属氧化物或氧化铝。 至少一个接触层可以设置在数据存储层的上方或下方的至少一个上，并且可以包括导电金属氧化物。

公开(公告)号：US08207068B2

公开(公告)日：2012-06-26

申请号：US12654395

申请日：2009-12-18

申请人： Seung-eon Ahn ,  Hye-young Kim ,  Byoung-ho Park ,  Jung-bin Yun ,  You-seon Kim

发明人： Seung-eon Ahn ,  Hye-young Kim ,  Byoung-ho Park ,  Jung-bin Yun ,  You-seon Kim

IPC分类号： H01L21/26

CPC分类号： H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1641

摘要： Example embodiments relate to a method of fabricating a memory device and a memory device. The method of fabricating a memory device comprises forming a lower electrode and an oxide layer on a lower structure and radiating an energy beam on a region of the oxide layer. The memory device comprises a lower structure and an oxide layer and a lower structure formed on the lower structure, the oxide layer including an electron beam radiation region that received radiation from an electron beam source creating an artificially formed current path through the oxide layer to the lower electrode. A reset current of the memory device may be decreased and stabilized.

摘要翻译： 示例性实施例涉及制造存储器件和存储器件的方法。 制造存储器件的方法包括在下部结构上形成下部电极和氧化物层，并在氧化物层的区域上辐射能量束。 存储器件包括下部结构和形成在下部结构上的下部结构的氧化物层和下部结构，所述氧化物层包括电子束辐射区域，所述电子束辐射区域接收来自电子束源的辐射，从而产生通过氧化物层的人为形成的电流路径到 下电极。 可以减小并稳定存储器件的复位电流。

公开(公告)号：US20100099218A1

公开(公告)日：2010-04-22

申请号：US12654395

申请日：2009-12-18

申请人： Seung-eon Ahn ,  Hye-young Kim ,  Byoung-ho Park ,  Jung-bin Yun ,  You-seon Kim

发明人： Seung-eon Ahn ,  Hye-young Kim ,  Byoung-ho Park ,  Jung-bin Yun ,  You-seon Kim

IPC分类号： H01L21/34

CPC分类号： H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1641

摘要： Example embodiments relate to a method of fabricating a memory device and a memory device. The method of fabricating a memory device comprises forming a lower electrode and an oxide layer on a lower structure and radiating an energy beam on a region of the oxide layer. The memory device comprises a lower structure and an oxide layer and a lower structure formed on the lower structure, the oxide layer including an electron beam radiation region that received radiation from an electron beam source creating an artificially formed current path through the oxide layer to the lower electrode. A reset current of the memory device may be decreased and stabilized.

公开(公告)号：US07659566B2

公开(公告)日：2010-02-09

申请号：US11501880

申请日：2006-08-10

申请人： Seung-eon Ahn ,  Hye-young Kim ,  Byoung-ho Park ,  Jung-bin Yun ,  You-seon Kim

发明人： Seung-eon Ahn ,  Hye-young Kim ,  Byoung-ho Park ,  Jung-bin Yun ,  You-seon Kim

IPC分类号： H01L27/108

CPC分类号： H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1641

摘要： Example embodiments relate to a method of fabricating a memory device and a memory device. The method of fabricating a memory device comprises forming a lower electrode and an oxide layer on a lower structure and radiating an energy beam on a region of the oxide layer. The memory device comprises a lower structure and an oxide layer and a lower structure formed on the lower structure, the oxide layer including an electron beam radiation region that received radiation from an electron beam source creating an artificially formed current path through the oxide layer to the lower electrode. A reset current of the memory device may be decreased and stabilized.

摘要翻译： 示例性实施例涉及制造存储器件和存储器件的方法。 制造存储器件的方法包括在下部结构上形成下部电极和氧化物层，并在氧化物层的区域上辐射能量束。 存储器件包括下部结构和形成在下部结构上的下部结构的氧化物层和下部结构，所述氧化物层包括电子束辐射区域，所述电子束辐射区域接收来自电子束源的辐射，从而产生通过氧化物层的人为形成的电流路径 下电极。 可以减小并稳定存储器件的复位电流。

公开(公告)号：US20070037351A1

公开(公告)日：2007-02-15

申请号：US11501880

申请日：2006-08-10

申请人： Seung-eon Ahn ,  Hye-young Kim ,  Byoung-ho Park ,  Jung-bin Yun ,  You-seon Kim

发明人： Seung-eon Ahn ,  Hye-young Kim ,  Byoung-ho Park ,  Jung-bin Yun ,  You-seon Kim

IPC分类号： H01L21/336

CPC分类号： H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1641

摘要： Example embodiments relate to a method of fabricating a memory device and a memory device. The method of fabricating a memory device comprises forming a lower electrode and an oxide layer on a lower structure and radiating an energy beam on a region of the oxide layer. The memory device comprises a lower structure and an oxide layer and a lower structure formed on the lower structure, the oxide layer including an electron beam radiation region that received radiation from an electron beam source creating an artificially formed current path through the oxide layer to the lower electrode. A reset current of the memory device may be decreased and stabilized.

摘要翻译： 示例性实施例涉及制造存储器件和存储器件的方法。 制造存储器件的方法包括在下部结构上形成下部电极和氧化物层，并在氧化物层的区域上辐射能量束。 存储器件包括下部结构和形成在下部结构上的下部结构的氧化物层和下部结构，所述氧化物层包括电子束辐射区域，所述电子束辐射区域接收来自电子束源的辐射，从而产生通过氧化物层的人为形成的电流路径到 下电极。 可以减小并稳定存储器件的复位电流。