Invention Grant
- Patent Title: Non-volatile memory devices and methods of fabricating the same
- Patent Title (中): 非易失性存储器件及其制造方法
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Application No.: US11403902Application Date: 2006-04-14
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Publication No.: US07936044B2Publication Date: 2011-05-03
- Inventor: Dong Chul Kim , In-kyeong Yoo , Myoung-jae Lee , Sun-ae Seo , In-gyu Baek , Seung-eon Ahn , Byoung-ho Park , Young-kwan Cha , Sang-jin Park
- Applicant: Dong Chul Kim , In-kyeong Yoo , Myoung-jae Lee , Sun-ae Seo , In-gyu Baek , Seung-eon Ahn , Byoung-ho Park , Young-kwan Cha , Sang-jin Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2005-0108125 20051111
- Main IPC: H01L29/00
- IPC: H01L29/00
Abstract:
A memory device may include a switching device and a storage node coupled with the switching device. The storage node may include a first electrode, a second electrode, a data storage layer and at least one contact layer. The data storage layer may be disposed between the first electrode and the second electrode and may include a transition metal oxide or aluminum oxide. The at least one contact layer may be disposed at least one of above or below the data storage layer and may include a conductive metal oxide.
Public/Granted literature
- US20070120580A1 Non-volatile memory devices and methods of fabricating the same Public/Granted day:2007-05-31
Information query
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