发明授权
- 专利标题： Lithography masks and methods of manufacture thereof
- 专利标题（中）： 光刻面具及其制造方法
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申请号： US12847641申请日： 2010-07-30
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公开(公告)号： US07947431B2公开(公告)日： 2011-05-24
- 发明人: Chandrasekhar Sarma , Alois Gutmann , Henning Haffner , Sajan Marokkey , Josef Maynollo
- 申请人： Chandrasekhar Sarma , Alois Gutmann , Henning Haffner , Sajan Marokkey , Josef Maynollo
- 申请人地址： DE Munich
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Munich
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; G03F1/00 ; G03B27/42
摘要：
Lithography masks and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of manufacturing a lithography mask. The method includes providing a substrate, forming a first pattern in a first region of the substrate, and forming a second pattern in a second region of the substrate, the second pattern comprising patterns for features oriented differently than patterns for features of the first pattern. The method includes affecting a polarization rotation of light differently in the first region than in the second region of the substrate.
公开/授权文献
- US20100297398A1 Lithography Masks and Methods of Manufacture Thereof 公开/授权日：2010-11-25
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