Methods of forming conductive features and structures thereof

Invention Grant

US07947606B2 Methods of forming conductive features and structures thereof 有权

Title translation: 形成导电特征的方法及其结构

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Patent Title: Methods of forming conductive features and structures thereof
Patent Title (中): 形成导电特征的方法及其结构
Application No.: US12129479

Application Date: 2008-05-29
Publication No.: US07947606B2

Publication Date: 2011-05-24
Inventor: Jiang Yan , Roland Hampp , Jin-Ping Han , Manfred Eller , Alois Gutmann
Applicant: Jiang Yan , Roland Hampp , Jin-Ping Han , Manfred Eller , Alois Gutmann
Applicant Address: DE Neubiberg
Assignee: Infineon Technologies AG
Current Assignee: Infineon Technologies AG
Current Assignee Address: DE Neubiberg
Agency: Slater & Matsil, L.L.P.
Main IPC: H01L21/311
IPC: H01L21/311

Methods of forming conductive features and structures thereof

Abstract:

Methods of forming features and structures thereof are disclosed. In one embodiment, a method of forming a feature includes forming a first material over a workpiece, forming a first pattern for a lower portion of the feature in the first material, and filling the first pattern with a sacrificial material. A second material is formed over the first material and the sacrificial material, and a second pattern for an upper portion of the feature is formed in the second material. The sacrificial material is removed. The first pattern and the second pattern are filled with a third material.

Abstract(Chinese):

公开了形成特征及其结构的方法。在一个实施例中，形成特征的方法包括在工件上形成第一材料，形成用于第一材料中特征的下部的第一图案，以及用牺牲材料填充第一图案。在第一材料和牺牲材料上形成第二材料，并且在第二材料中形成用于特征的上部的第二图案。牺牲材料被去除。第一图案和第二图案填充有第三材料。

Public/Granted literature

US20090294986A1 Methods of Forming Conductive Features and Structures Thereof Public/Granted day:2009-12-03

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀