Invention Grant
- Patent Title: Negative supply voltage generating circuit and semiconductor integrated circuit having the same
- Patent Title (中): 负电源电压发生电路和具有其的半导体集成电路
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Application No.: US12539653Application Date: 2009-08-12
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Publication No.: US07948300B2Publication Date: 2011-05-24
- Inventor: Ji-Yeoul Ryoo
- Applicant: Ji-Yeoul Ryoo
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, P.L.L.C.
- Priority: KR10-2008-0078894 20080812
- Main IPC: G05F3/16
- IPC: G05F3/16 ; H02M3/16

Abstract:
A negative supply voltage generating circuit includes a pulse generating circuit and a charge pump. The pulse generating circuit generates a first pulse signal and a second pulse signal in response to a clock signal. The first and second pulse signals have pulse widths different from each other. The charge pump generates a negative supply voltage by performing a charge pumping operation in response to the first and second pulse signals, and has a time interval between a switch-on time duration for charging a flying capacitor and a switch-on time duration for transmitting charges to an output capacitor.
Public/Granted literature
- US20100039170A1 NEGATIVE SUPPLY VOLTAGE GENERATING CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT HAVING THE SAME Public/Granted day:2010-02-18
Information query
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