发明授权
- 专利标题: Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes
- 专利标题(中): 使用非接触印刷方法同时形成N型和P型掺杂区的方法
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申请号: US12241396申请日: 2008-09-30
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公开(公告)号: US07951696B2公开(公告)日: 2011-05-31
- 发明人: Roger Yu-Kwan Leung , Anil Bhanap , Zhe Ding , Nicole Rutherford , Wenya Fan
- 申请人: Roger Yu-Kwan Leung , Anil Bhanap , Zhe Ding , Nicole Rutherford , Wenya Fan
- 申请人地址: US NJ Morristown
- 专利权人: Honeywell International Inc.
- 当前专利权人: Honeywell International Inc.
- 当前专利权人地址: US NJ Morristown
- 代理机构: Ingrassia Fisher & Lorenz, P.C.
- 主分类号: H01L21/22
- IPC分类号: H01L21/22
摘要:
Methods for simultaneously forming doped regions of opposite conductivity using non-contact printing processes are provided. In one exemplary embodiment, a method comprises the steps of depositing a first liquid dopant comprising first conductivity-determining type dopant elements overlying a first region of a semiconductor material and depositing a second liquid dopant comprising second conductivity-determining type dopant elements overlying a second region of the semiconductor material. The first conductivity-determining type dopant elements and the second conductivity-determining type dopant elements are of opposite conductivity. At least a portion of the first conductivity-determining type dopant elements and at least a portion of the second conductivity-determining type dopant elements are simultaneously diffused into the first region and into the second region, respectively.
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