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    METHODS OF MAKING LOW-REFRACTIVE INDEX AND/OR LOW-K ORGANOSILICATE COATINGS
    2.
    发明申请
    METHODS OF MAKING LOW-REFRACTIVE INDEX AND/OR LOW-K ORGANOSILICATE COATINGS 审中-公开
    制造低折射率和/或低K有机硅涂层的方法

    公开(公告)号：US20090026924A1

    公开(公告)日：2009-01-29

    申请号：US11931088

    申请日：2007-10-31

    申请人： Roger Y. Leung ,  De-Ling Zhou ,  Wenya Fan ,  Peter A. Smith ,  Paul G. Apen ,  Brian J. Daniels ,  Ananth Naman ,  Teresa A. Ramos ,  Robert R. Roth

    发明人： Roger Y. Leung ,  De-Ling Zhou ,  Wenya Fan ,  Peter A. Smith ,  Paul G. Apen ,  Brian J. Daniels ,  Ananth Naman ,  Teresa A. Ramos ,  Robert R. Roth

    IPC分类号： H01L51/54 ,  H01L33/00 ,  B32B3/26 ,  B05D5/06 ,  H01L27/15

    CPC分类号： C09D183/02 ,  H01L51/5262 ,  Y10T428/249953

    摘要： A method for forming a substantially transparent nanoporous organosilicate film on a substantially transparent substrate, for use in optical lighting devices such as organic light emitting diodes (OLEDs). The method includes first preparing a composition comprising a silicon containing pre-polymer, a porogen, and a catalyst. The composition is coated onto a substrate which is substantially transparent to visible light, forming a film thereon. The film is then gelled by crosslinking and cured by heating, such that the resulting cured film is substantially transparent to visible light. It is preferred that both the substrate and the nanoporous film are at least 98% transparent to visible light. Optical devices which include the resulting structures of this invention exhibit improved light extraction and illuminance where the nanoporous organosilicate film has a low refractive index in the range of 1.05 to 1.4, serving as an impedance matching layer in such devices.

    摘要翻译： 一种在基本上透明的基底上形成基本透明的纳米多孔有机硅酸盐膜的方法，用于诸如有机发光二极管（OLED）的光学照明装置中。 该方法包括首先制备包含含硅预聚物，致孔剂和催化剂的组合物。 将组合物涂布在对可见光基本透明的基底上，在其上形成膜。 然后通过交联使膜凝胶化并通过加热固化，使得所得固化膜对可见光基本上是透明的。 优选的是，衬底和纳米多孔膜对可见光透明至少98％。 包括本发明所得结构的光学器件表现出改进的光提取和照度，其中纳米多孔有机硅酸盐膜具有在1.05至1.4范围内的低折射率，用作这种器件中的阻抗匹配层。

    Interlayer adhesion promoter for low k materials
    3.
    发明申请
    Interlayer adhesion promoter for low k materials 审中-公开
    用于低k材料的层间粘合促进剂

    公开(公告)号：US20050173803A1

    公开(公告)日：2005-08-11

    申请号：US10517575

    申请日：2002-09-20

    申请人： Victor Lu ,  Roger Leung ,  Wenya Fan ,  Ananth Naman ,  De-Ling Zhou

    发明人： Victor Lu ,  Roger Leung ,  Wenya Fan ,  Ananth Naman ,  De-Ling Zhou

    IPC分类号： H01L21/314 ,  H01L21/316 ,  H01L21/4763 ,  H01L23/48 ,  H01L29/40

    CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02362 ,  H01L21/314 ,  H01L21/31695 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The invention relates to the production of multilayered dielectric structures and to semiconductor devices and integrated circuits comprising these structures. The structures of the invention are prepared by adhering a porous dielectric layer to a substantially nonporous capping layer via an intermediate adhesion promoting dielectric layer. A multilayered dielectric structure is prepared which has a porous dielectric layer which has a porosity of about 10% or more; b) an adhesion promoting dielectric layer on the porous dielectric layer which has a porosity of about 10% or less; and a substantially nonporous capping layer on the adhesion promoting dielectric layer.

    摘要翻译： 本发明涉及多层电介质结构的制造以及包括这些结构的半导体器件和集成电路。 本发明的结构通过将多孔电介质层通过中间粘合促进介电层粘附到基本上无孔的覆盖层来制备。 制备多层电介质结构，其具有孔隙率为约10％以上的多孔介电层; b）多孔电介质层上的粘附促进介电层，其孔隙率为约10％或更小; 和在粘附促进电介质层上的基本上无孔的覆盖层。

    BORON-COMPRISING INKS FOR FORMING BORON-DOPED REGIONS IN SEMICONDUCTOR SUBSTRATES USING NON-CONTACT PRINTING PROCESSES AND METHODS FOR FABRICATING SUCH BORON-COMPRISING INKS
    4.
    发明申请
    BORON-COMPRISING INKS FOR FORMING BORON-DOPED REGIONS IN SEMICONDUCTOR SUBSTRATES USING NON-CONTACT PRINTING PROCESSES AND METHODS FOR FABRICATING SUCH BORON-COMPRISING INKS 失效
    使用非接触式印刷工艺在半导体基板中形成硼掺杂区域的包含墨水的方法和用于制造这种含硼的墨水的方法

    公开(公告)号：US20100162920A1

    公开(公告)日：2010-07-01

    申请号：US12344745

    申请日：2008-12-29

    申请人： Roger Yu-Kwan Leung ,  De-Ling Zhou ,  Wenya Fan

    发明人： Roger Yu-Kwan Leung ,  De-Ling Zhou ,  Wenya Fan

    IPC分类号： C09D11/00 ,  C08L83/04 ,  C08L85/04

    CPC分类号： C09D11/30 ,  C08G77/20 ,  C08G77/46 ,  C09D11/38 ,  C09D11/52 ,  H01L21/2225

    摘要： Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks are provided. A boron-comprising ink comprises boron from or of a boron-comprising material and a spread-minimizing additive that results in a spreading factor of the boron-comprising ink in a range of from about 1.5 to about 6. The boron-comprising ink has a viscosity in a range of from about 1.5 to about 50 centipoise and, when deposited on a semiconductor substrate, provides a post-anneal sheet resistance in a range of from about 10 to about 100 ohms/square, a post-anneal doping depth in a range of from about 0.1 to about 1 μm, and a boron concentration in a range of from about 1×1019 to 1×1020 atoms/cm3.

    摘要翻译： 提供了用于使用非接触印刷方法在半导体衬底中形成硼掺杂区域的含硼油墨以及用于制造这种含硼油墨的方法。 含硼油墨包括来自含硼材料的硼或扩散最小化添加剂，其导致含硼油墨在约1.5至约6的范围内的铺展因子。含硼油墨具有 粘度在约1.5至约50厘泊的范围内，并且当沉积在半导体衬底上时，提供在约10至约100欧姆/平方的范围内的退火后电阻值，后退火掺杂深度 约0.1至约1μm的范围，硼浓度在约1×1019至1×1020原子/ cm3的范围内。

    THERMAL INTERFACE MATERIALS, METHODS OF PRODUCTION AND USES THEREOF
    5.
    发明申请
    THERMAL INTERFACE MATERIALS, METHODS OF PRODUCTION AND USES THEREOF 审中-公开
    热界面材料，生产方法及其用途

    公开(公告)号：US20090111925A1

    公开(公告)日：2009-04-30

    申请号：US11932094

    申请日：2007-10-31

    申请人： Kikue S. Burnham ,  Wenya Fan

    发明人： Kikue S. Burnham ,  Wenya Fan

    IPC分类号： C08L83/04 ,  C08K5/053

    CPC分类号： C08L83/04 ,  C08G77/12 ,  C08G77/20 ,  C08L71/02 ,  C08L2666/14 ,  C08L83/00

    摘要： Thermal interface materials comprise at least one silicon-based polymer and are formed from a combination of at least one silicon-based material, at least one catalyst and at least one elasticity promoter. In some embodiments, contemplated materials are also formed utilizing at least one polymerization component. Thermal interface materials are also disclosed that are capable of withstanding temperatures of at least 250 C where the material comprises at least one silicon-based polymer coupled with at least one elasticity promoter. Methods of forming these thermal interface materials comprise providing each of the at least one silicon-based material, at least one catalyst and at least one elasticity promoter, blending the components and optionally including the at least one polymerization component. Contemplated thermal interface materials disclosed are thermally stable, sticky, and elastic, and show a good thermal conductivity and strong adhesion when deposited on the high thermally conductive material. The thermal interface materials may then be utilized as formed or the materials may be cured pre- or post-application of the thermal interface material to the surface, substrate or component.

    摘要翻译： 热界面材料包括至少一种硅基聚合物，并且由至少一种硅基材料，至少一种催化剂和至少一种弹性促进剂的组合形成。 在一些实施方案中，还使用至少一种聚合组分形成预期的材料。 还公开了热界面材料，其能够耐受至少250℃的温度，其中该材料包含至少一种与至少一种弹性促进剂偶联的硅基聚合物。 形成这些热界面材料的方法包括提供至少一种硅基材料，至少一种催化剂和至少一种弹性促进剂中的每一种，共混组分和任选地包含至少一种聚合组分。 所公开的考虑的热界面材料是热稳定的，粘性的和弹性的，并且当沉积在高导热材料上时显示出良好的导热性和强粘附性。 然后可以将热界面材料用作形成的材料，或者材料可以在将热界面材料施加到表面，基底或部件之前或之后固化。

    Repair and restoration of damaged dielectric materials and films
    6.
    发明申请
    Repair and restoration of damaged dielectric materials and films 有权
    损坏的介质材料和薄膜的修复和修复

    公开(公告)号：US20060141641A1

    公开(公告)日：2006-06-29

    申请号：US10543347

    申请日：2004-01-26

    申请人： Wenya Fan ,  Victor Lu ,  Michael Thomas ,  Brian Daniels ,  Tiffany Nguyen ,  De-Ling Zhou ,  Ananth Naman ,  Lei Jin ,  Anil Bhanap

    发明人： Wenya Fan ,  Victor Lu ,  Michael Thomas ,  Brian Daniels ,  Tiffany Nguyen ,  De-Ling Zhou ,  Ananth Naman ,  Lei Jin ,  Anil Bhanap

    IPC分类号： H01L21/00 ,  H01L21/31

    CPC分类号： H01L21/31058 ,  H01L21/3105 ,  H01L21/76801 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. In addition, methods are described herein for reducing the condensation of a film and/or a carbon-deficient film that include: a) providing a film having a plurality of reactive silanol groups; b) placing the film into a plasma chamber; c) introducing a plurality of reactive organic moieties-containing silanes into the chamber; and d) allowing the silanes to react with at least some of the reactive silanol groups. Dielectric materials and low-k dielectric materials are described herein that comprise: a) an inorganic material having a plurality of silicon atoms; and b) a plurality of organic moiety-containing silane compounds, wherein the silane compounds are coupled to the inorganic material through at least some of the silicon atoms.

    摘要翻译： 本文描述了修复材料中空隙的方法，其包括：a）提供具有多个反应性硅烷醇基团的材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 还描述了材料中碳修复的方法，其包括：a）提供具有多个反应性硅烷醇基团的缺碳材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 此外，本文描述了用于减少膜和/或碳缺乏膜的冷凝的方法，其包括：a）提供具有多个反应性硅烷醇基团的膜; b）将膜放入等离子体室中; c）将多个含反应性有机部分的硅烷引入所述室中; 和d）允许硅烷与至少一些反应性硅烷醇基团反应。 介质材料和低k介电材料在本文中描述，其包括：a）具有多个硅原子的无机材料; 和b）多个含有机部分的硅烷化合物，其中硅烷化合物通过至少一些硅原子与无机材料偶联。

    METHODS FOR FORMING DOPED REGIONS IN SEMICONDUCTOR SUBSTRATES USING NON-CONTACT PRINTING PROCESSES AND DOPANT-COMPRISING INKS FOR FORMING SUCH DOPED REGIONS USING NON-CONTACT PRINTING PROCESSES
    7.
    发明申请
    METHODS FOR FORMING DOPED REGIONS IN SEMICONDUCTOR SUBSTRATES USING NON-CONTACT PRINTING PROCESSES AND DOPANT-COMPRISING INKS FOR FORMING SUCH DOPED REGIONS USING NON-CONTACT PRINTING PROCESSES 审中-公开
    使用非接触式印刷工艺形成半导体基板中的掺杂区域的方法和使用非接触式印刷工艺形成这种掺杂区域的包覆墨水

    公开(公告)号：US20090239363A1

    公开(公告)日：2009-09-24

    申请号：US12274006

    申请日：2008-11-19

    申请人： Roger Yu-Kwan Leung ,  De-Ling Zhou ,  Wenya Fan

    发明人： Roger Yu-Kwan Leung ,  De-Ling Zhou ,  Wenya Fan

    IPC分类号： H01L21/225 ,  C09D11/00 ,  H01B1/02

    CPC分类号： H01L21/228 ,  C09D11/36 ,  C09D11/38 ,  C09D11/52 ,  H01L21/2225 ,  H01L31/18

    摘要： Methods for forming doped regions in semiconductor substrates using non-contact printing processes and dopant-comprising inks for forming such doped regions using non-contact printing processes are provided. In an exemplary embodiment, a method for forming doped regions in a semiconductor substrate is provided. The method comprises providing an ink comprising a conductivity-determining type dopant, applying the ink to the semiconductor substrate using a non-contact printing process, and subjecting the semiconductor substrate to a thermal treatment such that the conductivity-determining type dopant diffuses into the semiconductor substrate.

    摘要翻译： 提供了使用非接触印刷方法在半导体基板中形成掺杂区域的方法和使用非接触印刷方法形成这种掺杂区域的掺杂剂油墨的方法。 在一个示例性实施例中，提供了一种用于在半导体衬底中形成掺杂区域的方法。 所述方法包括提供包含导电性确定型掺杂剂的油墨，使用非接触印刷方法将所述油墨施加到所述半导体基板，以及对所述半导体基板进行热处理，使得所述导电率确定型掺杂剂扩散到所述半导体 基质。

    METHODS FOR FORMING DOPED REGIONS IN A SEMICONDUCTOR MATERIAL
    10.
    发明申请
    METHODS FOR FORMING DOPED REGIONS IN A SEMICONDUCTOR MATERIAL 审中-公开
    在半导体材料中形成掺杂区域的方法

    公开(公告)号：US20100035422A1

    公开(公告)日：2010-02-11

    申请号：US12186999

    申请日：2008-08-06

    申请人： Roger Yu-Kwan Leung ,  De-Ling Zhou ,  Wenya Fan

    发明人： Roger Yu-Kwan Leung ,  De-Ling Zhou ,  Wenya Fan

    IPC分类号： H01L21/22

    CPC分类号： H01L21/228 ,  H01L31/0288 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： Methods for forming doped regions in a semiconductor material that minimize or eliminate vapor diffusion of a dopant element and/or dopant from a deposited dopant and/or into a semiconductor material and methods for fabricating semiconductor devices that minimize or eliminate vapor diffusion of a dopant element and/or dopant from a deposited dopant and/or into a semiconductor material are provided. In one exemplary embodiment, a method for forming doped regions in a semiconductor material comprises depositing a conductivity-determining type dopant comprising a dopant element overlying a first portion of the semiconductor material. A diffusion barrier material is applied such that it overlies a second portion of the semiconductor material. The dopant element of the conductivity-determining type dopant is diffused into the first portion of the semiconductor material.

    摘要翻译： 在掺杂剂元素和/或掺杂剂从沉积的掺杂剂和/或半导体材料中最小化或消除蒸汽扩散的半导体材料中形成掺杂区域的方法以及用于制造半导体器件的方法，该半导体器件最小化或消除掺杂元素的蒸气扩散 和/或来自沉积的掺杂剂和/或半导体材料的掺杂剂。 在一个示例性实施例中，用于在半导体材料中形成掺杂区域的方法包括沉积包含覆盖半导体材料的第一部分的掺杂剂元素的导电率确定型掺杂剂。 施加扩散阻挡材料，使其覆盖半导体材料的第二部分。 导电性确定型掺杂剂的掺杂剂元素扩散到半导体材料的第一部分。