Invention Grant
- Patent Title: Semiconductor device with hollow structure
- Patent Title (中): 具有中空结构的半导体器件
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Application No.: US11645150Application Date: 2006-12-22
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Publication No.: US07952185B2Publication Date: 2011-05-31
- Inventor: Horst Theuss , Gottfried Beer
- Applicant: Horst Theuss , Gottfried Beer
- Applicant Address: DE Munich
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Munich
- Agency: Brinks Hofer Gilson & Lione
- Priority: DE102006058010 20061208
- Main IPC: H01L23/52
- IPC: H01L23/52
Abstract:
A device comprising a chip, which is held in casting compound and on which a hollow structure is arranged is disclosed.
Public/Granted literature
- US20080136009A1 Semiconductor device with hollow structure Public/Granted day:2008-06-12
Information query
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