发明授权
- 专利标题: Semiconductor device with hollow structure
- 专利标题(中): 具有中空结构的半导体器件
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申请号: US11645150申请日: 2006-12-22
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公开(公告)号: US07952185B2公开(公告)日: 2011-05-31
- 发明人: Horst Theuss , Gottfried Beer
- 申请人: Horst Theuss , Gottfried Beer
- 申请人地址: DE Munich
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Munich
- 代理机构: Brinks Hofer Gilson & Lione
- 优先权: DE102006058010 20061208
- 主分类号: H01L23/52
- IPC分类号: H01L23/52
摘要:
A device comprising a chip, which is held in casting compound and on which a hollow structure is arranged is disclosed.
公开/授权文献
- US20080136009A1 Semiconductor device with hollow structure 公开/授权日:2008-06-12