发明授权
- 专利标题: Semiconductor light-emitting device
- 专利标题(中): 半导体发光装置
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申请号: US12347392申请日: 2008-12-31
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公开(公告)号: US07953134B2公开(公告)日: 2011-05-31
- 发明人: Ming-Ta Chin , Kuo-Feng Huang , Ping-Fei Shen , Ching-Jen Wang , Shih-Pang Chang
- 申请人: Ming-Ta Chin , Kuo-Feng Huang , Ping-Fei Shen , Ching-Jen Wang , Shih-Pang Chang
- 申请人地址: TW Hsinchu
- 专利权人: Epistar Corporation
- 当前专利权人: Epistar Corporation
- 当前专利权人地址: TW Hsinchu
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- 主分类号: H01S5/00
- IPC分类号: H01S5/00
摘要:
A semiconductor light-emitting device includes a substrate, a first cladding layer over the substrate, an active region on the first cladding layer, and a second cladding layer on the active region, wherein the active region includes a first type barrier layer that is doped and a second type barrier layer that is undoped, the first type barrier layer being closer to the first cladding layer than the second type barrier layer.
公开/授权文献
- US20100166033A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 公开/授权日:2010-07-01