利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

6 条记录 (耗时 0.011 秒)

    Method of manufacturing a semiconductor structure and separating the semiconductor from a substrate
    1.
    发明授权
    Method of manufacturing a semiconductor structure and separating the semiconductor from a substrate 有权
    制造半导体结构并将半导体与衬底分离的方法

    公开(公告)号：US08664087B2

    公开(公告)日：2014-03-04

    申请号：US13310342

    申请日：2011-12-02

    申请人： Shih-Pang Chang ,  Hung-Chi Yang ,  Yu-Jiun Shen

    发明人： Shih-Pang Chang ,  Hung-Chi Yang ,  Yu-Jiun Shen

    IPC分类号： H01L21/30 ,  H01L21/46

    CPC分类号： H01L21/02458 ,  H01L21/0242 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/30617 ,  H01L33/0079

    摘要： A method of manufacturing a semiconductor structure is disclosed, which includes providing a substrate comprising a bottom surface and a growth surface opposite to the bottom surface; forming a buffer layer comprising a first surface which is not a C-plane substantially parallel with the bottom surface on the growth surface; forming a semiconductor structure on the buffer layer; forming at least one cavity in the buffer layer; extending the cavity along a main extending direction; separating the substrate and the semiconductor structure; wherein the main extending direction is substantially not parallel with the normal direction of the first surface.

    摘要翻译： 公开了一种制造半导体结构的方法，其包括提供包括底表面和与底表面相对的生长表面的基底; 形成缓冲层，所述缓冲层包括第一表面，所述第一表面不是与生长表面上的底表面基本平行的C平面; 在缓冲层上形成半导体结构; 在所述缓冲层中形成至少一个空腔; 沿着主延伸方向延伸空腔; 分离衬底和半导体结构; 其中所述主延伸方向基本上不与所述第一表面的法线方向平行。

    LIGHT EMITTING DEVICE WITH QCSE-REVERSED AND QCSE-FREE MULTI QUANTUM WELL STRUCTURE
    3.
    发明申请
    LIGHT EMITTING DEVICE WITH QCSE-REVERSED AND QCSE-FREE MULTI QUANTUM WELL STRUCTURE 审中-公开
    具有QCSE反射和无QCSE的多量子结构的发光器件

    公开(公告)号：US20130320296A1

    公开(公告)日：2013-12-05

    申请号：US13488764

    申请日：2012-06-05

    申请人： Chun-Ta Yu ,  Chien-Yuan Tseng ,  Yu-Yao Lin ,  Shih-Pang Chang ,  Hung-Chih Yang

    发明人： Chun-Ta Yu ,  Chien-Yuan Tseng ,  Yu-Yao Lin ,  Shih-Pang Chang ,  Hung-Chih Yang

    IPC分类号： H01L33/04

    CPC分类号： H01L33/06 ,  H01L33/32

    摘要： A light-emitting device comprises a semiconductor stacked structure, the semiconductor stacked structure comprising a p-type semiconductor layer, a n-type semiconductor layer and an multiple quantum well structure between the p-type semiconductor layer and the n-type semiconductor layer, wherein the multiple quantum well structure comprises a first multiple quantum well structure near the n-type semiconductor layer and a second multiple quantum well structure near the p-type semiconductor layer, wherein the first multiple quantum well structure has positive interface bound charge and the second multiple quantum well structure has zero interface bound charge.

    摘要翻译： 发光器件包括半导体堆叠结构，在p型半导体层和n型半导体层之间的半导体层叠结构包括p型半导体层，n型半导体层和多量子阱结构， 其中所述多量子阱结构包括靠近所述n型半导体层的第一多量子阱结构和在所述p型半导体层附近的第二多量子阱结构，其中所述第一多量子阱结构具有正界面结合的电荷， 多量子阱结构具有零界面界限电荷。

    METHOD OF MANUFACTURING A SEMICONDUCTOR STRUCTURE
    5.
    发明申请
    METHOD OF MANUFACTURING A SEMICONDUCTOR STRUCTURE 有权
    制造半导体结构的方法

    公开(公告)号：US20120142142A1

    公开(公告)日：2012-06-07

    申请号：US13310342

    申请日：2011-12-02

    申请人： Shih-Pang CHANG ,  Hung-Chi YANG ,  Yu-Jiun SHEN

    发明人： Shih-Pang CHANG ,  Hung-Chi YANG ,  Yu-Jiun SHEN

    IPC分类号： H01L21/20

    CPC分类号： H01L21/02458 ,  H01L21/0242 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/30617 ,  H01L33/0079

    摘要： A method of manufacturing a semiconductor structure is disclosed, which includes providing a substrate comprising a bottom surface and a growth surface opposite to the bottom surface; forming a buffer layer comprising a first surface which is not a C-plane substantially parallel with the bottom surface on the growth surface; forming a semiconductor structure on the buffer layer; forming at least one cavity in the buffer layer; extending the cavity along a main extending direction; separating the substrate and the semiconductor structure; wherein the main extending direction is substantially not parallel with the normal direction of the first surface.

    摘要翻译： 公开了一种制造半导体结构的方法，其包括提供包括底表面和与底表面相对的生长表面的基底; 形成缓冲层，所述缓冲层包括第一表面，所述第一表面不是与生长表面上的底表面基本平行的C平面; 在缓冲层上形成半导体结构; 在所述缓冲层中形成至少一个空腔; 沿着主延伸方向延伸空腔; 分离衬底和半导体结构; 其中所述主延伸方向基本上不与所述第一表面的法线方向平行。