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公开(公告)号:US07953134B2
公开(公告)日:2011-05-31
申请号:US12347392
申请日:2008-12-31
申请人: Ming-Ta Chin , Kuo-Feng Huang , Ping-Fei Shen , Ching-Jen Wang , Shih-Pang Chang
发明人: Ming-Ta Chin , Kuo-Feng Huang , Ping-Fei Shen , Ching-Jen Wang , Shih-Pang Chang
IPC分类号: H01S5/00
CPC分类号: H01S5/343 , B82Y20/00 , H01L33/06 , H01L33/30 , H01S5/0216 , H01S5/0217 , H01S5/309 , H01S5/3407
摘要: A semiconductor light-emitting device includes a substrate, a first cladding layer over the substrate, an active region on the first cladding layer, and a second cladding layer on the active region, wherein the active region includes a first type barrier layer that is doped and a second type barrier layer that is undoped, the first type barrier layer being closer to the first cladding layer than the second type barrier layer.
摘要翻译: 一种半导体发光器件,包括:衬底,衬底上的第一覆层,第一覆层上的有源区和有源区上的第二覆层,其中有源区包括掺杂的第一类阻挡层 以及不掺杂的第二类型阻挡层,所述第一类型阻挡层比所述第二类型阻挡层更靠近所述第一包覆层。
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公开(公告)号:US08278672B2
公开(公告)日:2012-10-02
申请号:US11727378
申请日:2007-03-26
申请人: Ya-Ju Lee , Ta-Cheng Hsu , Ming-Ta Chin , Yen-Wen Chen , Wu-Tsung Lo , Chung-Yuan Li , Min-Hsun Hsieh
发明人: Ya-Ju Lee , Ta-Cheng Hsu , Ming-Ta Chin , Yen-Wen Chen , Wu-Tsung Lo , Chung-Yuan Li , Min-Hsun Hsieh
IPC分类号: H01L33/22
摘要: A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a semiconductor substrate. The semiconductor substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [0 11] or [01 1] from [100], or toward [011] or [0 11] from [ 100] so that the upper surface of the semiconductor substrate comprises at least two lattice planes with different lattice plane directions. The multilayer epitaxial structure has a roughened upper surface perpendicular to the predetermined lattice direction. The invention also discloses a method for fabricating a semiconductor light-emitting device.
摘要翻译: 公开了一种半导体发光器件。 半导体发光器件包括设置在半导体衬底上的多层外延结构。 半导体衬底具有与其上表面垂直的预定晶格方向,其中预定晶格方向从[100]或[100]或[011]或[011]到[011]或[011] ],使得半导体衬底的上表面包括具有不同晶格面方向的至少两个晶格面。 多层外延结构具有垂直于预定晶格方向的粗糙化的上表面。 本发明还公开了一种制造半导体发光器件的方法。
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公开(公告)号:US20130029440A1
公开(公告)日:2013-01-31
申请号:US13632856
申请日:2012-10-01
申请人: Ya-ju LEE , Ta-Cheng Hsu , Ming-Ta Chin , Yen-Wen Chen , Lo Wu-Tsung , Chung-Yuan Li , Min-Hsun Hsieh
发明人: Ya-ju LEE , Ta-Cheng Hsu , Ming-Ta Chin , Yen-Wen Chen , Lo Wu-Tsung , Chung-Yuan Li , Min-Hsun Hsieh
IPC分类号: H01L33/22
摘要: A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a substrate. The substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [0 11] or [01 1] from [100], or toward [011] or [0 11] from [ 100] so that the upper surface of the substrate comprises at least two lattice planes with different lattice plane directions. The multilayer epitaxial structure has a roughened upper surface perpendicular to the predetermined lattice direction. The invention also discloses a method for fabricating a semiconductor light-emitting device.
摘要翻译: 公开了一种半导体发光器件。 半导体发光器件包括设置在衬底上的多层外延结构。 衬底具有垂直于其上表面的预定晶格方向,其中预定的晶格方向从[100]或[100]到[011]或[011]的角度朝向[011]或[01 1] 使得衬底的上表面包括具有不同晶格面方向的至少两个晶格面。 多层外延结构具有垂直于预定晶格方向的粗糙化的上表面。 本发明还公开了一种制造半导体发光器件的方法。
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公开(公告)号:US20070221929A1
公开(公告)日:2007-09-27
申请号:US11727378
申请日:2007-03-26
申请人: Ya-Ju Lee , Ta-Cheng Hsu , Ming-Ta Chin , Yen-Wen Chen , Lo Wu-Tsung , Li Chung-Yuan , Min-Hsun Hsieh
发明人: Ya-Ju Lee , Ta-Cheng Hsu , Ming-Ta Chin , Yen-Wen Chen , Lo Wu-Tsung , Li Chung-Yuan , Min-Hsun Hsieh
IPC分类号: H01L33/00
摘要: A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a semiconductor substrate. The semiconductor substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [0ī1] or [01ī] from [100], or toward [011] or [0 ii] from [ī00] so that the upper surface of the semiconductor substrate comprises at least two lattice planes with different lattice plane directions. The multilayer epitaxial structure has a roughened upper surface perpendicular to the predetermined lattice direction. The invention also discloses a method for fabricating a semiconductor light-emitting device.
摘要翻译: 公开了一种半导体发光器件。 半导体发光器件包括设置在半导体衬底上的多层外延结构。 半导体衬底具有垂直于其上表面的预定晶格方向,其中预定的晶格方向朝向[100]或[011]或[0
ii],使得半导体衬底的上表面包括具有不同晶格面方向的至少两个晶格面。 多层外延结构具有垂直于预定晶格方向的粗糙化的上表面。 本发明还公开了一种制造半导体发光器件的方法。
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