Semiconductor light-emitting device and fabrication method thereof
    2.
    发明授权
    Semiconductor light-emitting device and fabrication method thereof 有权
    半导体发光器件及其制造方法

    公开(公告)号:US08278672B2

    公开(公告)日:2012-10-02

    申请号:US11727378

    申请日:2007-03-26

    IPC分类号: H01L33/22

    CPC分类号: H01L33/16 H01L33/22

    摘要: A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a semiconductor substrate. The semiconductor substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [0 11] or [01 1] from [100], or toward [011] or [0 11] from [ 100] so that the upper surface of the semiconductor substrate comprises at least two lattice planes with different lattice plane directions. The multilayer epitaxial structure has a roughened upper surface perpendicular to the predetermined lattice direction. The invention also discloses a method for fabricating a semiconductor light-emitting device.

    摘要翻译: 公开了一种半导体发光器件。 半导体发光器件包括设置在半导体衬底上的多层外延结构。 半导体衬底具有与其上表面垂直的预定晶格方向,其中预定晶格方向从[100]或[100]或[011]或[011]到[011]或[011] ],使得半导体衬底的上表面包括具有不同晶格面方向的至少两个晶格面。 多层外延结构具有垂直于预定晶格方向的粗糙化的上表面。 本发明还公开了一种制造半导体发光器件的方法。

    METHOD FOR FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE
    3.
    发明申请
    METHOD FOR FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
    制造半导体发光器件的方法

    公开(公告)号:US20130029440A1

    公开(公告)日:2013-01-31

    申请号:US13632856

    申请日:2012-10-01

    IPC分类号: H01L33/22

    CPC分类号: H01L33/16 H01L33/22

    摘要: A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a substrate. The substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [0 11] or [01 1] from [100], or toward [011] or [0 11] from [ 100] so that the upper surface of the substrate comprises at least two lattice planes with different lattice plane directions. The multilayer epitaxial structure has a roughened upper surface perpendicular to the predetermined lattice direction. The invention also discloses a method for fabricating a semiconductor light-emitting device.

    摘要翻译: 公开了一种半导体发光器件。 半导体发光器件包括设置在衬底上的多层外延结构。 衬底具有垂直于其上表面的预定晶格方向,其中预定的晶格方向从[100]或[100]到[011]或[011]的角度朝向[011]或[01 1] 使得衬底的上表面包括具有不同晶格面方向的至少两个晶格面。 多层外延结构具有垂直于预定晶格方向的粗糙化的上表面。 本发明还公开了一种制造半导体发光器件的方法。

    Semiconductor light-emitting device and fabrication method thereof
    4.
    发明申请
    Semiconductor light-emitting device and fabrication method thereof 有权
    半导体发光器件及其制造方法

    公开(公告)号:US20070221929A1

    公开(公告)日:2007-09-27

    申请号:US11727378

    申请日:2007-03-26

    IPC分类号: H01L33/00

    CPC分类号: H01L33/16 H01L33/22

    摘要: A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a semiconductor substrate. The semiconductor substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [0ī1] or [01ī] from [100], or toward [011] or [0 ii] from [ī00] so that the upper surface of the semiconductor substrate comprises at least two lattice planes with different lattice plane directions. The multilayer epitaxial structure has a roughened upper surface perpendicular to the predetermined lattice direction. The invention also discloses a method for fabricating a semiconductor light-emitting device.

    摘要翻译: 公开了一种半导体发光器件。 半导体发光器件包括设置在半导体衬底上的多层外延结构。 半导体衬底具有垂直于其上表面的预定晶格方向,其中预定的晶格方向朝向[100]或[011]或[0 ii],使得半导体衬底的上表面包括具有不同晶格面方向的至少两个晶格面。 多层外延结构具有垂直于预定晶格方向的粗糙化的上表面。 本发明还公开了一种制造半导体发光器件的方法。