Invention Grant
US07956393B2 Composition for photoresist stripper and method of fabricating thin film transistor array substrate
有权
用于光致抗蚀剂剥离剂的组合物和制造薄膜晶体管阵列基板的方法
- Patent Title: Composition for photoresist stripper and method of fabricating thin film transistor array substrate
- Patent Title (中): 用于光致抗蚀剂剥离剂的组合物和制造薄膜晶体管阵列基板的方法
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Application No.: US12564019Application Date: 2009-09-21
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Publication No.: US07956393B2Publication Date: 2011-06-07
- Inventor: Jong-Hyun Choung , Bong-Kyun Kim , Hong-Sick Park , Sun-Young Hong , Young-Joo Choi , Byeong-Jin Lee , Nam-Seok Suh , Byung-Uk Kim , Suk-Il Yoon , Jong-Hyun Jeong , Sung-Gun Shin , Soon-Beom Huh , Se-Hwan Jung , Doo-Young Jang , Sun-Joo Park , Oh-Hwan Kweon
- Applicant: Jong-Hyun Choung , Bong-Kyun Kim , Hong-Sick Park , Sun-Young Hong , Young-Joo Choi , Byeong-Jin Lee , Nam-Seok Suh , Byung-Uk Kim , Suk-Il Yoon , Jong-Hyun Jeong , Sung-Gun Shin , Soon-Beom Huh , Se-Hwan Jung , Doo-Young Jang , Sun-Joo Park , Oh-Hwan Kweon
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: KR10-2008-0128684 20081217
- Main IPC: H01L31/062
- IPC: H01L31/062 ; H01L31/113

Abstract:
A composition for a photoresist stripper and a method of fabricating a thin film transistor array substrate are provided according to one or more embodiments. In one or more embodiments, the composition includes about 5-30 weight % of a chain amine compound, about 0.5-10 weight % of a cyclic amine compound, about 10-80 weight % of a glycol ether compound, about 5-30 weight % of distilled water, and about 0.1-5 weight % of a corrosion inhibitor.
Public/Granted literature
- US20100151610A1 COMPOSITION FOR PHOTORESIST STRIPPER AND METHOD OF FABRICATING THIN FILM TRANSISTOR ARRAY SUBSTRATE Public/Granted day:2010-06-17
Information query
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