发明授权
US07956393B2 Composition for photoresist stripper and method of fabricating thin film transistor array substrate
有权
用于光致抗蚀剂剥离剂的组合物和制造薄膜晶体管阵列基板的方法
- 专利标题: Composition for photoresist stripper and method of fabricating thin film transistor array substrate
- 专利标题(中): 用于光致抗蚀剂剥离剂的组合物和制造薄膜晶体管阵列基板的方法
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申请号: US12564019申请日: 2009-09-21
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公开(公告)号: US07956393B2公开(公告)日: 2011-06-07
- 发明人: Jong-Hyun Choung , Bong-Kyun Kim , Hong-Sick Park , Sun-Young Hong , Young-Joo Choi , Byeong-Jin Lee , Nam-Seok Suh , Byung-Uk Kim , Suk-Il Yoon , Jong-Hyun Jeong , Sung-Gun Shin , Soon-Beom Huh , Se-Hwan Jung , Doo-Young Jang , Sun-Joo Park , Oh-Hwan Kweon
- 申请人: Jong-Hyun Choung , Bong-Kyun Kim , Hong-Sick Park , Sun-Young Hong , Young-Joo Choi , Byeong-Jin Lee , Nam-Seok Suh , Byung-Uk Kim , Suk-Il Yoon , Jong-Hyun Jeong , Sung-Gun Shin , Soon-Beom Huh , Se-Hwan Jung , Doo-Young Jang , Sun-Joo Park , Oh-Hwan Kweon
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Innovation Counsel LLP
- 优先权: KR10-2008-0128684 20081217
- 主分类号: H01L31/062
- IPC分类号: H01L31/062 ; H01L31/113
摘要:
A composition for a photoresist stripper and a method of fabricating a thin film transistor array substrate are provided according to one or more embodiments. In one or more embodiments, the composition includes about 5-30 weight % of a chain amine compound, about 0.5-10 weight % of a cyclic amine compound, about 10-80 weight % of a glycol ether compound, about 5-30 weight % of distilled water, and about 0.1-5 weight % of a corrosion inhibitor.
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