发明授权
- 专利标题： Memory devices including dielectric thin film and method of manufacturing the same
- 专利标题（中）： 存储器件包括电介质薄膜及其制造方法
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申请号： US11607500申请日： 2006-12-01
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公开(公告)号： US07960774B2公开(公告)日： 2011-06-14
- 发明人: Sung-Yool Choi , Min Ki Ryu , Ansoon Kim , Chil Seong Ah , Han Young Yu
- 申请人： Sung-Yool Choi , Min Ki Ryu , Ansoon Kim , Chil Seong Ah , Han Young Yu
- 申请人地址： KR Daejeon
- 专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人地址： KR Daejeon
- 代理机构： Ladas & Parry LLP
- 优先权： KR10-2005-0117717 20051205; KR10-2006-0044063 20060517
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
A memory device including a dielectric thin film having a plurality of dielectric layers and a method of manufacturing the same are provided. The memory device includes: a bottom electrode; at least one dielectric thin film disposed on the bottom electrode and having a plurality of dielectric layers with different charge trap densities from each other; and an top electrode disposed on the dielectric thin film. Therefore, a memory device, which can be readily manufactured by a simple process and can be highly integrated using its simple structure, can be provided.
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