发明授权
US07964515B2 Method of forming high-dielectric constant films for semiconductor devices
有权
形成用于半导体器件的高介电常数膜的方法
- 专利标题： Method of forming high-dielectric constant films for semiconductor devices
- 专利标题（中）： 形成用于半导体器件的高介电常数膜的方法
-
申请号： US11963150申请日： 2007-12-21
-
公开(公告)号： US07964515B2公开(公告)日： 2011-06-21
- 发明人: Robert D. Clark , Cory Wajda
- 申请人： Robert D. Clark , Cory Wajda
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469 ; C23C14/00 ; C23C16/00
摘要：
A method is provided for forming high dielectric constant (high-k) films for semiconductor devices. According to one embodiment, a metal-carbon-oxygen high-k film is deposited by alternately and sequentially exposing a substrate to a metal-carbon precursor and near saturation exposure level of an oxidation source containing ozone. The method is capable of forming a metal-carbon-oxygen high-k film with good thickness uniformity while impeding growth of an interface layer between the metal-carbon-oxygen high-k film and the substrate. According to one embodiment, the metal-carbon-oxygen high-k film may be treated with an oxidation process to remove carbon from the film.