Invention Grant
US07968000B2 Etchant composition, and method of fabricating metal pattern and thin film transistor array panel using the same 有权
蚀刻剂组合物,以及使用其制造金属图案和薄膜晶体管阵列面板的方法

Etchant composition, and method of fabricating metal pattern and thin film transistor array panel using the same
Abstract:
An etchant composition is provided. The etchant composition includes about 40 to about 65 wt % of phosphoric acid, about 2 to about 5 wt % of nitric acid, about 2 to about 20 wt % of acetic acid, about 0.1 to about 2 wt % of a compound containing phosphate, about 0.1 to about 2 wt % of a compound simultaneously containing an amino group and a carboxyl group, and a remaining weight percent of water for the total weight of the composition.
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