Invention Grant
US07968000B2 Etchant composition, and method of fabricating metal pattern and thin film transistor array panel using the same
有权
蚀刻剂组合物,以及使用其制造金属图案和薄膜晶体管阵列面板的方法
- Patent Title: Etchant composition, and method of fabricating metal pattern and thin film transistor array panel using the same
- Patent Title (中): 蚀刻剂组合物,以及使用其制造金属图案和薄膜晶体管阵列面板的方法
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Application No.: US12432437Application Date: 2009-04-29
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Publication No.: US07968000B2Publication Date: 2011-06-28
- Inventor: Young-Joo Choi , Bong-Kyun Kim , Byeong-Jin Lee , Jong-Hyun Choung , Sun-Young Hong , Nam-Seok Suh , Hong-Sick Park , Ky-Sub Kim , Seung-Yong Lee , Joon-Woo Lee , Young-Chul Park , Young-Jun Jin , Seung-Jae Yang , Hyun-Kyu Lee , Sang-Hoon Jang , Min-Ki Lim
- Applicant: Young-Joo Choi , Bong-Kyun Kim , Byeong-Jin Lee , Jong-Hyun Choung , Sun-Young Hong , Nam-Seok Suh , Hong-Sick Park , Ky-Sub Kim , Seung-Yong Lee , Joon-Woo Lee , Young-Chul Park , Young-Jun Jin , Seung-Jae Yang , Hyun-Kyu Lee , Sang-Hoon Jang , Min-Ki Lim
- Applicant Address: KR Suwon-Si KR Iksan-Si
- Assignee: Samsung Electronics, Co., Ltd.,Dongwoo Fine-Chem Co., Ltd.
- Current Assignee: Samsung Electronics, Co., Ltd.,Dongwoo Fine-Chem Co., Ltd.
- Current Assignee Address: KR Suwon-Si KR Iksan-Si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2008-0110435 20081107
- Main IPC: C09K13/00
- IPC: C09K13/00 ; C03C15/00

Abstract:
An etchant composition is provided. The etchant composition includes about 40 to about 65 wt % of phosphoric acid, about 2 to about 5 wt % of nitric acid, about 2 to about 20 wt % of acetic acid, about 0.1 to about 2 wt % of a compound containing phosphate, about 0.1 to about 2 wt % of a compound simultaneously containing an amino group and a carboxyl group, and a remaining weight percent of water for the total weight of the composition.
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