发明授权
- 专利标题: Rinse treatment method and development process method
- 专利标题(中): 冲洗处理方法和开发工艺方法
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申请号: US11578055申请日: 2005-03-02
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公开(公告)号: US07968278B2公开(公告)日: 2011-06-28
- 发明人: Yasuhiro Takaki , Osamu Miyahara , Keiichi Tanaka , Shinya Wakamizu , Takashi Terada
- 申请人: Yasuhiro Takaki , Osamu Miyahara , Keiichi Tanaka , Shinya Wakamizu , Takashi Terada
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2004-118233 20040413
- 国际申请: PCT/JP2005/003486 WO 20050302
- 国际公布: WO2005/101468 WO 20051027
- 主分类号: G03F7/26
- IPC分类号: G03F7/26 ; G03F7/30
摘要:
A rinsing method for performing a rinsing process on a substrate, after a developing process is performed on a light-exposed pattern disposed thereon, includes a step (STEP 5) of throwing off a developing solution from the substrate after development; a step (STEP 6) of supplying a water-based cleaning liquid onto the substrate; a step (STEP 7) of supplying a surfactant-containing rinsing liquid onto the substrate to replace liquid remaining on the substrate with the surfactant-containing rinsing liquid; and a step (STEP 8) of rotating the substrate to expand and throw off the surfactant-containing rinsing liquid on the substrate. STEP 8 is arranged to supply the surfactant-containing rinsing liquid for a supply time of 5 seconds or less. STEP 9 is arranged to include a first period with a lower rotation number and a second period with a higher rotation number, and to set the rotation number of the substrate in the first period to be more than 300 rpm and less than 1,000 rpm.
公开/授权文献
- US20080274433A1 Rinse Treatment Method and Development Process Method 公开/授权日:2008-11-06
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