发明授权
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11945739申请日： 2007-11-27
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公开(公告)号： US07968884B2公开(公告)日： 2011-06-28
- 发明人: Shunpei Yamazaki , Kazuko Ikeda , Shinya Sasagawa , Hideomi Suzawa
- 申请人： Shunpei Yamazaki , Kazuko Ikeda , Shinya Sasagawa , Hideomi Suzawa
- 申请人地址： JP
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP
- 代理机构： Husch Blackwell LLP
- 优先权： JP2006-327921 20061205
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/76 ; H01L31/036 ; H01L31/112
摘要：
A semiconductor device manufactured utilizing an SOI substrate, in which defects due to an end portion of an island-shaped silicon layer are prevented and the reliability is improved, and a manufacturing method thereof. The following are included: an SOI substrate in which an insulating layer and an island-shaped silicon layer are stacked in order over a support substrate; a gate insulating layer provided over one surface and a side surface of the island-shaped silicon layer; and a gate electrode which is provided over the island-shaped silicon layer with the gate insulating layer interposed therebetween. The gate insulating layer is formed such that the dielectric constant in the region which is in contact with the side surface of the island-shaped silicon layer is lower than that over the one surface of the island-shaped silicon layer.
公开/授权文献
- US20080128808A1 Semiconductor Device and Manufacturing Method Thereof 公开/授权日：2008-06-05
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