Invention Grant
- Patent Title: System and method of beam energy identification for single wafer ion implantation
- Patent Title (中): 单晶离子注入的束能识别系统和方法
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Application No.: US12190736Application Date: 2008-08-13
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Publication No.: US07973290B2Publication Date: 2011-07-05
- Inventor: Shu Satoh
- Applicant: Shu Satoh
- Applicant Address: US MA Beverly
- Assignee: Axcelis Technologies, Inc.
- Current Assignee: Axcelis Technologies, Inc.
- Current Assignee Address: US MA Beverly
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01J3/14
- IPC: H01J3/14 ; H01J3/26 ; G21K5/10

Abstract:
The present invention involves a beam energy identification system, comprising an accelerated ion beam, wherein the accelerated ion beam is scanned in a fast scan axis within a beam scanner, wherein the beam scanner is utilized to deflect the accelerated ion beam into narrow faraday cups downstream of the scanner, wherein a difference in scanner voltage or current to position the beam into the Faraday cups is utilized to calculated the energy of ion beam.
Public/Granted literature
- US20100038553A1 SYSTEM AND METHOD OF BEAM ENERGY IDENTIFICATION FOR SINGLE WAFER ION IMPLANTATION Public/Granted day:2010-02-18
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