Invention Grant
US07973290B2 System and method of beam energy identification for single wafer ion implantation 有权
单晶离子注入的束能识别系统和方法

System and method of beam energy identification for single wafer ion implantation
Abstract:
The present invention involves a beam energy identification system, comprising an accelerated ion beam, wherein the accelerated ion beam is scanned in a fast scan axis within a beam scanner, wherein the beam scanner is utilized to deflect the accelerated ion beam into narrow faraday cups downstream of the scanner, wherein a difference in scanner voltage or current to position the beam into the Faraday cups is utilized to calculated the energy of ion beam.
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