公开(公告)号：US20110101213A1

公开(公告)日：2011-05-05

申请号：US12609912

申请日：2009-10-30

Applicant: Shu Satoh

Inventor： Shu Satoh

IPC: H01J37/08 ,  B01D59/44

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J2237/0048 ,  H01J2237/0815

Abstract: Methods and a system of an ion implantation system are disclosed that are capable of increasing beam current above a maximum kinetic energy of a first charge state from an ion source without changing the charge state at the ion source. Positive ions having a first positive charge state are selected into an accelerator. The positive ions of the first positive charge state are accelerated in acceleration stages and stripped to convert them to positive ions of a second charge state. A second kinetic energy level higher than the maximum kinetic energy level of the first charge state can be obtained.

Abstract translation: 公开了一种离子注入系统的方法和系统，其能够在不改变离子源处的电荷状态的情况下从离子源增加高于第一电荷状态的最大动能的束电流。 选择具有第一正电荷状态的正离子进入加速器。 第一正电荷状态的正离子在加速阶段加速并剥离，以将其转换成第二电荷状态的正离子。 可以获得高于第一充电状态的最大动能水平的第二动能水平。

公开(公告)号：US20090272918A1

公开(公告)日：2009-11-05

申请号：US12431081

申请日：2009-04-28

Applicant: Shu Satoh

Inventor： Shu Satoh

IPC: H01J37/08

CPC classification number: H01J37/244 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24564 ,  H01J2237/30405 ,  H01J2237/30455 ,  H01J2237/31703

Abstract: An ion implantation system and associated method includes a scanner configured to scan a pencil shaped ion beam into a ribbon shaped ion beam, and a beam bending element configured to receive the ribbon shaped ion beam having a first direction, and bend the ribbon shaped ion beam to travel in a second direction. The system further includes an end station positioned downstream of the beam bending element, wherein the end station is configured to receive the ribbon shaped ion beam traveling in the second direction, and secure a workpiece for implantation thereof. In addition, the system includes a beam current measurement system located at an exit opening of the beam bending element that is configured to measure a beam current of the ribbon shaped ion beam at the exit opening of the beam bending element.

Abstract translation: 离子注入系统和相关方法包括扫描器，其被配置为将铅笔形离子束扫描成带状离子束，以及梁弯曲元件，其构造成接收具有第一方向的带状离子束，并且弯曲带状离子束 沿第二个方向行驶。 所述系统还包括位于所述梁弯曲元件下游的终端站，其中所述端站被构造成接收沿所述第二方向传播的所述带状离子束，并且固定用于其注入的工件。 此外，该系统包括位于梁弯曲元件的出口处的束电流测量系统，其被配置为测量在束弯曲元件的出口处的带状离子束的束电流。

公开(公告)号：US20070105355A1

公开(公告)日：2007-05-10

申请号：US11527594

申请日：2006-09-27

Applicant: Adrian Murrell ,  Peter Banks ,  Matthew Dobson ,  Peter Kindersley ,  Takao Sakase ,  Marvin Farley ,  Shu Satoh ,  Geoffrey Ryding

Inventor： Adrian Murrell ,  Peter Banks ,  Matthew Dobson ,  Peter Kindersley ,  Takao Sakase ,  Marvin Farley ,  Shu Satoh ,  Geoffrey Ryding

IPC: H01L21/26

CPC classification number: H01J37/3171 ,  H01J37/3023 ,  H01J49/30 ,  H01J2237/20228 ,  H01J2237/20285 ,  H01J2237/2487 ,  H01J2237/30488 ,  H01J2237/31703 ,  H01J2237/31708 ,  H01L21/265 ,  H01L21/67005 ,  H01L21/68714 ,  H01L21/68764 ,  Y10S438/961

Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

公开(公告)号：US06331713B1

公开(公告)日：2001-12-18

申请号：US09413035

申请日：1999-10-06

Applicant: Theodore H. Smick ,  Marvin Farley ,  Geoffrey Ryding ,  Shu Satoh ,  Peter Rose

Inventor： Theodore H. Smick ,  Marvin Farley ,  Geoffrey Ryding ,  Shu Satoh ,  Peter Rose

IPC: G21F502

CPC classification number: H01J37/3171 ,  H01J27/08 ,  H01J37/08

Abstract: An ion source assembly 10 is disclosed, the assembly comprising a source sub assembly having an ion source 20, an extraction electrode 40 and an electrically insulating high voltage bushing 60 to support the extraction electrode 40 relative to the ion source 20. The ion source assembly further includes a chamber 70 having an exit aperture to allow egress of ions to an ion implanter. The chamber 70 encloses one or more further electrodes 80,90. The source sub assembly is mounted to the chamber 70 via a hinge 150. This allows ready access to the inner walls of the chamber 70, which in turn allows easier maintenance and cleaning of the further electrodes 80,90 as well as the inner walls of the chamber 70. Preferably, a liner 160 is employed on the inner walls of the chamber 70.

Abstract translation: 公开了一种离子源组件10，该组件包括源子组件，其具有离子源20，提取电极40和电绝缘高压衬套60，以相对于离子源20支撑引出电极40.离子源组件 还包括具有出口孔的室70，以允许离子离开离子注入机。 腔室70包围一个或多个另外的电极80,90。 源子组件通过铰链150安装到腔室70.这允许容易地进入腔室70的内壁，这反过来允许更多的维护和清洁另外的电极80,90以及内壁 腔室70优选地，在腔室70的内壁上使用衬套160。

公开(公告)号：US4791273A

公开(公告)日：1988-12-13

申请号：US51076

申请日：1987-05-15

Applicant: Shu Satoh ,  Louis E. Evans, Jr.

Inventor： Shu Satoh ,  Louis E. Evans, Jr.

IPC: H01J27/20 ,  H01J27/02 ,  H01J27/26 ,  H01J37/08 ,  H01J49/04 ,  F22B1/28

CPC classification number: H01J37/08 ,  H01J27/022

Abstract: A vaporizer system for an ion source includes a radiation source positioned on the vaporizer axis for providing radiation, multiple crucibles radially spaced from the axis and circumferentially spaced from each other and a reflector rotatable about the axis for directing radiation from the source at a selected one of the crucibles. The radiation causes heating of the selected crucible and vaporization of a solid source material contained therein. The radiation source is a visible and/or infrared emitting lamp such as a quartz halogen lamp. The crucibles are thermally isolated from each other by a heat shield so that the selected crucible is heated while the others remain relatively cool.

公开(公告)号：US07973290B2

公开(公告)日：2011-07-05

申请号：US12190736

申请日：2008-08-13

Applicant: Shu Satoh

Inventor： Shu Satoh

IPC: H01J3/14 ,  H01J3/26 ,  G21K5/10

CPC classification number: H01J37/304 ,  H01J37/05 ,  H01J37/09 ,  H01J2237/053 ,  H01J2237/30433

Abstract: The present invention involves a beam energy identification system, comprising an accelerated ion beam, wherein the accelerated ion beam is scanned in a fast scan axis within a beam scanner, wherein the beam scanner is utilized to deflect the accelerated ion beam into narrow faraday cups downstream of the scanner, wherein a difference in scanner voltage or current to position the beam into the Faraday cups is utilized to calculated the energy of ion beam.

Abstract translation: 本发明涉及一种束能量识别系统，其包括加速的离子束，其中加速的离子束以束扫描器内的快速扫描轴扫描，其中该束扫描器用于将加速的离子束偏转到下游的法拉第杯中 其中利用扫描仪电压或电流将光束定位到法拉第杯中的差异来计算离子束的能量。

公开(公告)号：US07858955B2

公开(公告)日：2010-12-28

申请号：US12145713

申请日：2008-06-25

Applicant: Shu Satoh ,  Edward C. Eisner ,  Manny Sieradzki

Inventor： Shu Satoh ,  Edward C. Eisner ,  Manny Sieradzki

IPC: H01J27/02 ,  H01J27/00

CPC classification number: H01J37/05 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/057 ,  H01J2237/24507 ,  H01J2237/24542 ,  H01J2237/24578 ,  H01J2237/31703

Abstract: An ion beam uniformity control system, wherein the uniformity control system comprising a differential pumping chamber that encloses an array of individually controlled gas jets, wherein the gas pressure of the individually controlled gas jets are powered by a controller to change the fraction of charge exchanged ions, and wherein the charge exchange reactions between the gas and ions change the fraction of the ions with original charge state of a broad ion beam, wherein the charge exchanged portion of the broad ion beam is removed utilizing an deflector that generates a magnetic field, a Faraday cup profiler for measuring the broad ion beam profile; and adjusting the individually controlled gas jets based upon feedback provided to the controller to obtain the desired broad ion beam.

Abstract translation: 一种离子束均匀性控制系统，其中所述均匀性控制系统包括包围独立控制的气体射流阵列的差分泵送室，其中单独控制的气体射流的气体压力由控制器供电以改变电荷交换离子的分数 ，并且其中气体和离子之间的电荷交换反应改变具有宽离子束的原始电荷状态的离子的分数，其中使用产生磁场的偏转器去除宽离子束的电荷交换部分， 用于测量宽离子束分布的法拉第杯型材分析仪; 以及基于提供给控制器的反馈来调节单独控制的气体射流，以获得所需的宽离子束。

公开(公告)号：US07705328B2

公开(公告)日：2010-04-27

申请号：US11932117

申请日：2007-10-31

Applicant: Shu Satoh ,  Manny Sieradzki

Inventor： Shu Satoh ,  Manny Sieradzki

IPC: G21K5/10 ,  H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/3007 ,  H01J2237/045 ,  H01J2237/057 ,  H01J2237/153

Abstract: A ribbon ion beam system, comprising an ion source configured to generate a ribbon ion beam along a first beam path, wherein the ribbon ion beam enters a mass analysis magnet having a height dimension (h1) and a long dimension (w1) that is perpendicular to an xy plane, wherein the mass analysis magnet is configured with its momentum dispersive xy plane to receive the ribbon ion beam and to provide magnetic fields to transmit the ribbon ion beam along a second beam path, wherein the ribbon ion beam exiting the mass analysis magnet is divergent in the non-dispersive xz plane and convergent in the xy plane, a mass selection slit for receiving the divergent ribbon ion beam and selecting desired ion species of the ribbon ion beam exiting the mass analysis magnet, an angle correction device configured to receive the divergent ribbon ion beam exiting the mass selection slit into a parallel ribbon ion beam in the horizontal xz plane and a diverging ribbon ion beam in an xy plane along a third beam path, and wherein the parallel ribbon beam has a variable height (h2) and a long dimension, width (w2).

Abstract translation: 一种带状离子束系统，包括被配置为沿着第一光束路径产生带状离子束的离子源，其中所述带状离子束进入具有垂直于所述第一光束路径的高度尺寸（h1）和长尺寸（w1）的质量分析磁体 其中所述质量分析磁体被配置有其动量分散xy平面以接收带状离子束并且提供磁场以沿着第二光束路径透射带状离子束，其中离开质量分析的带状离子束 磁体在非分散xz平面中发散并且在xy平面中收敛，质量选择狭缝用于接收发散带状离子束并选择离开质量分析磁体的带离子束的期望离子种类，角度校正装置被配置为 将离开质量选择狭缝的发散带状离子束接收在水平xz平面中的平行带状离子束中，并沿着第三层在xy平面中分散带状离子束 光束路径，并且其中所述平行带状束具有可变高度（h2）和长尺寸宽度（w2）。

公开(公告)号：US20090108198A1

公开(公告)日：2009-04-30

申请号：US11932117

申请日：2007-10-31

Applicant: Shu Satoh ,  Manny Sieradzki

Inventor： Shu Satoh ,  Manny Sieradzki

IPC: H01J49/30

CPC classification number: H01J37/3171 ,  H01J37/3007 ,  H01J2237/045 ,  H01J2237/057 ,  H01J2237/153

Abstract: A ribbon ion beam system, comprising an ion source configured to generate a ribbon ion beam along a first beam path, wherein the ribbon ion beam enters a mass analysis magnet having a height dimension (h1) and a long dimension (w1) that is perpendicular to an xy plane, wherein the mass analysis magnet is configured with its momentum dispersive xy plane to receive the ribbon ion beam and to provide magnetic fields to transmit the ribbon ion beam along a second beam path, wherein the ribbon ion beam exiting the mass analysis magnet is divergent in the non-dispersive xz plane and convergent in the xy plane, a mass selection slit for receiving the divergent ribbon ion beam and selecting desired ion species of the ribbon ion beam exiting the mass analysis magnet, an angle correction device configured to receive the divergent ribbon ion beam exiting the mass selection slit into a parallel ribbon ion beam in the horizontal xz plane and a diverging ribbon ion beam in an xy plane along a third beam path, and wherein the parallel ribbon beam has a variable height (h2) and a long dimension, width (w2).

Abstract translation: 一种带状离子束系统，包括被配置为沿着第一光束路径产生带状离子束的离子源，其中所述带状离子束进入具有垂直于所述第一光束路径的高度尺寸（h1）和长尺寸（w1）的质量分析磁体 其中所述质量分析磁体被配置有其动量分散xy平面以接收带状离子束并且提供磁场以沿着第二光束路径透射带状离子束，其中离开质量分析的带状离子束 磁体在非分散xz平面中发散并且在xy平面中收敛，质量选择狭缝用于接收发散带状离子束并选择离开质量分析磁体的带离子束的期望离子种类，角度校正装置被配置为 将离开质量选择狭缝的发散带状离子束接收在水平xz平面中的平行带状离子束中，并沿着第三层在xy平面中分散带状离子束 光束路径，并且其中所述平行带状束具有可变高度（h2）和长尺寸宽度（w2）。

公开(公告)号：US20070259511A1

公开(公告)日：2007-11-08

申请号：US11417028

申请日：2006-05-04

Applicant: Adrian Murrell ,  Bernard Harrison ,  Peter Edwards ,  Peter Kindersley ,  Craig Lowrie ,  Peter Banks ,  Takao Sakase ,  Marvin Farley ,  Shu Satoh ,  Geoffrey Ryding

Inventor： Adrian Murrell ,  Bernard Harrison ,  Peter Edwards ,  Peter Kindersley ,  Craig Lowrie ,  Peter Banks ,  Takao Sakase ,  Marvin Farley ,  Shu Satoh ,  Geoffrey Ryding

IPC: H01L21/26

CPC classification number: H01J37/3171 ,  H01J37/304 ,  H01J2237/20228 ,  H01J2237/30488 ,  H01J2237/30494 ,  H01J2237/31703

Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

Abstract translation: 注入器提供相对于注入束的衬底的二维扫描，使得光束在衬底上绘制扫描线的光栅。 在离开衬底的周转点处测量束电流，并且使用电流值来控制随后的快速扫描速度，以补偿束电流中任何变化对慢扫描方向上的剂量均匀性的影响。 扫描可以产生不相交的均匀间隔的平行扫描线的光栅，并且选择线之间的间隔以确保适当的剂量均匀性。