Invention Grant
- Patent Title: Implantation quality improvement by xenon/hydrogen dilution gas
- Patent Title (中): 氙/氢稀释气体的植入质量改善
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Application No.: US12416725Application Date: 2009-04-01
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Publication No.: US07973293B2Publication Date: 2011-07-05
- Inventor: Yu-Peng Lin , Wei-Ming You , Ruey-Yong Deng , Jiunn-Nan Lin , Sheng-Chien Tung , Pin Chia Su
- Applicant: Yu-Peng Lin , Wei-Ming You , Ruey-Yong Deng , Jiunn-Nan Lin , Sheng-Chien Tung , Pin Chia Su
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Agent Steven E. Koffs
- Main IPC: H01J37/317
- IPC: H01J37/317
Abstract:
A method comprises supplying a dopant gas in an arc chamber of an ion source. A dilutant is supplied to dilute the dopant gas. The dilutant comprises about 98.5 wt. % xenon and about 1.5 wt. % hydrogen. An ion beam is generated from the diluted dopant gas using the ion source.
Public/Granted literature
- US20100176306A1 IMPLANTATION QUALITY IMPROVEMENT BY XENON/HYDROGEN DILUTION GAS Public/Granted day:2010-07-15
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