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    Method for temperature control in a rapid thermal processing system
    2.
    发明授权
    Method for temperature control in a rapid thermal processing system 有权
    快速热处理系统中的温度控制方法

    公开(公告)号：US07368303B2

    公开(公告)日：2008-05-06

    申请号：US10969475

    申请日：2004-10-20

    申请人： Wei-Ming You ,  Shi-Ming Wang ,  Cheng Wei Chen ,  Jian-Hua Huang ,  Yu-Lin Du

    发明人： Wei-Ming You ,  Shi-Ming Wang ,  Cheng Wei Chen ,  Jian-Hua Huang ,  Yu-Lin Du

    IPC分类号： G01R31/26 ,  H01L21/66

    CPC分类号： H01L21/67248

    摘要： A method is disclosed for a multi-zone interference correction processing for a rapid thermal processing (RTP) system. This processing allows for improved calibration/tuning of RTP systems by accounting for zone coupling. The disclosed method includes establishing baseline characteristic data and zone characteristic data, and then using the baseline and zone characteristic data to determine lamp-control parameters, such as temperature offset values, for temperature sensors of the RTP system. The baseline characteristic data includes information regarding baseline heating uniformity of an RTP system. The zone characteristic data is collected for a plurality of heating zones within the heating chamber of the RTP system, each zone being associated with a respective temperature probe. The zone characteristic data is collected based on controlled temperature sensor variations. The lamp-control parameters for temperature probes of the RTP system are then calculated based on the baseline characteristic data and the zone characteristic data.

    摘要翻译： 公开了一种用于快速热处理（RTP）系统的多区域干扰校正处理的方法。 该处理允许通过考虑区域耦合来改进RTP系统的校准/调谐。 所公开的方法包括建立基线特征数据和区域特征数据，然后使用基线和区域特征数据来确定用于RTP系统的温度传感器的灯控制参数，例如温度偏移值。 基线特征数据包括关于RTP系统的基线加热均匀性的信息。 针对RTP系统的加热室内的多个加热区收集区域特征数据，每个区域与相应的温度探针相关联。 基于受控的温度传感器变化收集区域特征数据。 然后根据基线特征数据和区域特征数据计算RTP系统温度探测器的灯控制参数。

    Metrology for monitoring a rapid thermal annealing process
    3.
    发明授权
    Metrology for monitoring a rapid thermal annealing process 失效
    用于监测快速热退火过程的计量

    公开(公告)号：US06777251B2

    公开(公告)日：2004-08-17

    申请号：US10175702

    申请日：2002-06-20

    申请人： Ching Shan Lu ,  Fu-Su Lee ,  Wei-Ming You ,  Jih-Churng Twu ,  Yu-Chien Hsiao

    发明人： Ching Shan Lu ,  Fu-Su Lee ,  Wei-Ming You ,  Jih-Churng Twu ,  Yu-Chien Hsiao

    IPC分类号： H01L2166

    CPC分类号： H01L21/67253 ,  H01L21/67098 ,  H01L22/20

    摘要： A method including operating an ion implanted to implanting ions in a semiconductor wafer at a first ion dose level; performing a first thermal wave measurement to obtain the first thermal wave value; placing the semiconductor wafer in a rapid thermal annealing furnace and operating the furnace to rapidly heat the semiconductor wafer at a first rate for a first time period and so that the wafer is heated with intent of achieving a wafer temperature of 500° C.; performing a second thermal wave measurement to obtain a second thermal wave value; comparing the difference between the first thermal wave value and the second thermal wave value to a target range of 376.5-382.5 and rejecting the wafer as being outside of an acceptable specification if the difference is outside of the target range.

    摘要翻译： 一种方法，包括操作注入的离子以在第一离子剂量水平下在半导体晶片中注入离子; 执行第一热波测量以获得第一热波值; 将半导体晶片放置在快速热退火炉中并操作炉子以第一速率第一时间段快速加热半导体晶片，并且旨在实现晶片温度为500℃的晶片被加热; 执行第二热波测量以获得第二热波值; 将第一热波值和第二热波值之间的差值与376.5-382.5的目标范围进行比较，并且如果差异在目标范围之外，则拒绝晶片超出可接受规范。

    Implanting method for forming photodiode
    5.
    发明授权
    Implanting method for forming photodiode 有权
    用于形成光电二极管的植入方法

    公开(公告)号：US08652868B2

    公开(公告)日：2014-02-18

    申请号：US13410165

    申请日：2012-03-01

    申请人： Yu-Shen Shih ,  Ching-Hwanq Su ,  Wei-Ming You ,  Chih-Cherng Jeng ,  Kuo-Cheng Lee ,  Yen-Hsung Ho

    发明人： Yu-Shen Shih ,  Ching-Hwanq Su ,  Wei-Ming You ,  Chih-Cherng Jeng ,  Kuo-Cheng Lee ,  Yen-Hsung Ho

    IPC分类号： H01L21/00

    CPC分类号： H01L31/103 ,  H01L31/1804 ,  Y02E10/547

    摘要： An implanting method for forming a photodiode comprises providing a substrate with a first conductivity, growing an epitaxial layer on the substrate, implanting ions with a second conductivity in the epitaxial layer from a front side of the substrate and implanting ions with the first conductivity in the epitaxial layer from the front side of the substrate to form a photo active region adjacent to the front side and a photo inactive region underneath the photo active region. By employing the implanting method, an average doping density of the photo active region is approximately ten times more than an average doping density of the photo inactive region.

    摘要翻译： 用于形成光电二极管的注入方法包括提供具有第一导电性的衬底，在衬底上生长外延层，从衬底的前侧在外延层中注入具有第二导电性的离子，并将第一导电性的离子注入 从衬底的前侧形成外延层以形成与前侧相邻的光有源区和在光有源区下面的光无源区。 通过采用注入方法，光有源区的平均掺杂密度约为光无源区的平均掺杂密度的十倍。