发明授权
- 专利标题： Insulated gate field effect transistor and a method of manufacturing the same
- 专利标题（中）： 绝缘栅场效应晶体管及其制造方法
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申请号： US12025965申请日： 2008-02-05
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公开(公告)号： US07977751B2公开(公告)日： 2011-07-12
- 发明人: Kojiro Nagaoka , Yoshihiko Nagahama
- 申请人： Kojiro Nagaoka , Yoshihiko Nagahama
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： SNR Denton US LLP
- 优先权： JP2007-026918 20070206; JP2007-132364 20070518
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
Disclosed herein is an insulated gate field effect transistor including: (A) a source/drain region and a channel formation region; (B) a gate electrode formed above the channel formation region; and (C) a gate insulating film; wherein the gate insulating film is composed of a gate insulating film main body portion formed between the gate electrode and the channel formation region, and a gate insulating film extension portion extending from the insulating film main body portion to a middle of a side surface portion of the gate electrode, and when a height of the gate electrode is HGate and a height of the gate insulating film extension portion is HIns with a surface of the channel formation region as a reference, a relationship of HIns
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