公开(公告)号：US07795688B2

公开(公告)日：2010-09-14

申请号：US11422975

申请日：2006-06-08

申请人： Yoshihiko Nagahama

发明人： Yoshihiko Nagahama

IPC分类号： H01L29/43

CPC分类号： H01L21/823842 ,  H01L21/28079 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/495 ,  H01L29/4958 ,  H01L29/66545 ,  H01L29/6659

摘要： A semiconductor device including, on a substrate, a first conduction type MOS transistor having a gate electrode provided in a first trench formed in an insulation film on the substrate, and a second conduction type MOS transistor having a gate electrode provided in a second trench formed in the insulation film, the first conduction type and the second conduction type being opposite types.

摘要翻译： 一种半导体器件，在基板上包括第一导电型MOS晶体管，该第一导电型MOS晶体管具有形成在基板上的绝缘膜中的第一沟槽中的栅电极，以及第二导电型MOS晶体管，其具有形成在第二沟槽中的栅电极 在绝缘膜中，第一导电类型和第二导电类型是相反的。

公开(公告)号：US20110269259A1

公开(公告)日：2011-11-03

申请号：US13178624

申请日：2011-07-08

申请人： Keiji Tatani ,  Takuji Matsumoto ,  Yasushi Tateshita ,  Fumihiko Koga ,  Takashi Nagano ,  Takahiro Toyoshima ,  Tetsuji Yamaguchi ,  Keiichi Nakazawa ,  Naoyuki Miyashita ,  Yoshihiko Nagahama

发明人： Keiji Tatani ,  Takuji Matsumoto ,  Yasushi Tateshita ,  Fumihiko Koga ,  Takashi Nagano ,  Takahiro Toyoshima ,  Tetsuji Yamaguchi ,  Keiichi Nakazawa ,  Naoyuki Miyashita ,  Yoshihiko Nagahama

IPC分类号： H01L31/02

CPC分类号： H01L27/1463 ,  H01L27/14609 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14689 ,  H01L27/14831

摘要： A solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed.

摘要翻译： 一种固体摄像器件，包括像素部分，外围电路部分，在外围电路部分中的半导体衬底上形成有STI结构的第一隔离区域和在半导体衬底上形成有STI结构的第二隔离区域 在像素部分。 埋在半导体衬底中的第二隔离区的部分比第一隔离区的半导体衬底的部分浅，第二隔离区的上表面的高度等于第一隔离区的高度。 还公开了制造固态成像装置的方法和设置有固态成像装置的电子装置。

公开(公告)号：US20080185637A1

公开(公告)日：2008-08-07

申请号：US12025965

申请日：2008-02-05

申请人： Kojiro Nagaoka ,  Yoshihiko Nagahama

发明人： Kojiro Nagaoka ,  Yoshihiko Nagahama

IPC分类号： H01L29/00 ,  H01L21/336

CPC分类号： H01L29/66545 ,  H01L21/28114 ,  H01L21/7685 ,  H01L29/42368 ,  H01L29/42376

摘要： Disclosed herein is an insulated gate field effect transistor including: (A) a source/drain region and a channel formation region; (B) a gate electrode formed above the channel formation region; and (C) a gate insulating film; wherein the gate insulating film is composed of a gate insulating film main body portion formed between the gate electrode and the channel formation region, and a gate insulating film extension portion extending from the insulating film main body portion to a middle of a side surface portion of the gate electrode, and when a height of the gate electrode is HGate and a height of the gate insulating film extension portion is HIns with a surface of the channel formation region as a reference, a relationship of HIns

摘要翻译： 本文公开了一种绝缘栅场效应晶体管，包括：（A）源/漏区和沟道形成区; （B）形成在沟道形成区域上方的栅电极; 和（C）栅极绝缘膜; 其特征在于，所述栅极绝缘膜由形成在所述栅极电极与所述沟道形成区域之间的栅极绝缘膜主体部分和从所述绝缘膜主体部分延伸到所述栅极绝缘膜主体部分的侧面部分的中部 栅电极，并且当栅电极的高度为H 且栅极绝缘膜延伸部分的高度为沟道形成区域的表面时为H < 作为参考，实现了H Gate 的关系。

公开(公告)号：US08728852B2

公开(公告)日：2014-05-20

申请号：US13178624

申请日：2011-07-08

申请人： Keiji Tatani ,  Takuji Matsumoto ,  Yasushi Tateshita ,  Fumihiko Koga ,  Takashi Nagano ,  Takahiro Toyoshima ,  Tetsuji Yamaguchi ,  Keiichi Nakazawa ,  Naoyuki Miyashita ,  Yoshihiko Nagahama

发明人： Keiji Tatani ,  Takuji Matsumoto ,  Yasushi Tateshita ,  Fumihiko Koga ,  Takashi Nagano ,  Takahiro Toyoshima ,  Tetsuji Yamaguchi ,  Keiichi Nakazawa ,  Naoyuki Miyashita ,  Yoshihiko Nagahama

IPC分类号： H01L31/02

CPC分类号： H01L27/1463 ,  H01L27/14609 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14689 ,  H01L27/14831

摘要： A solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed.

摘要翻译： 一种固体摄像器件，包括像素部分，外围电路部分，在外围电路部分中的半导体衬底上形成有STI结构的第一隔离区域和在半导体衬底上形成有STI结构的第二隔离区域 在像素部分。 埋在半导体衬底中的第二隔离区的部分比第一隔离区的半导体衬底的部分浅，第二隔离区的上表面的高度等于第一隔离区的高度。 还公开了制造固态成像装置的方法和设置有固态成像装置的电子装置。

公开(公告)号：US07977751B2

公开(公告)日：2011-07-12

申请号：US12025965

申请日：2008-02-05

申请人： Kojiro Nagaoka ,  Yoshihiko Nagahama

发明人： Kojiro Nagaoka ,  Yoshihiko Nagahama

IPC分类号： H01L29/76

CPC分类号： H01L29/66545 ,  H01L21/28114 ,  H01L21/7685 ,  H01L29/42368 ,  H01L29/42376

摘要： Disclosed herein is an insulated gate field effect transistor including: (A) a source/drain region and a channel formation region; (B) a gate electrode formed above the channel formation region; and (C) a gate insulating film; wherein the gate insulating film is composed of a gate insulating film main body portion formed between the gate electrode and the channel formation region, and a gate insulating film extension portion extending from the insulating film main body portion to a middle of a side surface portion of the gate electrode, and when a height of the gate electrode is HGate and a height of the gate insulating film extension portion is HIns with a surface of the channel formation region as a reference, a relationship of HIns

摘要翻译： 本文公开了一种绝缘栅场效应晶体管，包括：（A）源/漏区和沟道形成区; （B）形成在沟道形成区域上方的栅电极; 和（C）栅极绝缘膜; 其特征在于，所述栅极绝缘膜由形成在所述栅极电极与所述沟道形成区域之间的栅极绝缘膜主体部分和从所述绝缘膜主体部分延伸到所述栅极绝缘膜主体部分的侧面部分的中部 栅电极，并且当栅电极的高度为HGate并且栅极绝缘膜延伸部分的高度为沟道形成区域的表面为HIns时，满足HIns

公开(公告)号：US20090256226A1

公开(公告)日：2009-10-15

申请号：US12420570

申请日：2009-04-08

申请人： Keiji Tatani ,  Takuji Matsumoto ,  Yasushi Tateshita ,  Fumihiko Koga ,  Takashi Nagano ,  Takahiro Toyoshima ,  Tetsuji Yamaguchi ,  Keiichi Nakazawa ,  Naoyuki Miyashita ,  Yoshihiko Nagahama

发明人： Keiji Tatani ,  Takuji Matsumoto ,  Yasushi Tateshita ,  Fumihiko Koga ,  Takashi Nagano ,  Takahiro Toyoshima ,  Tetsuji Yamaguchi ,  Keiichi Nakazawa ,  Naoyuki Miyashita ,  Yoshihiko Nagahama

IPC分类号： H01L31/0232 ,  H01L31/00 ,  H01L21/762

CPC分类号： H01L27/1463 ,  H01L27/14609 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14689 ,  H01L27/14831

摘要： Disclosed is a solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed.

摘要翻译： 公开了一种固态成像装置，其包括像素部分，外围电路部分，在外围电路部分中的半导体衬底上形成有STI结构的第一隔离区域和形成有STI结构的第二隔离区域 半导体衬底。 掩埋在半导体衬底中的第二隔离区的部分比第一隔离区的半导体衬底的部分浅，第二隔离区的上表面的高度等于第一隔离区的高度。 还公开了制造固态成像装置的方法和设置有固态成像装置的电子装置。

公开(公告)号：US20060278934A1

公开(公告)日：2006-12-14

申请号：US11422975

申请日：2006-06-08

申请人： Yoshihiko Nagahama

发明人： Yoshihiko Nagahama

IPC分类号： H01L29/78 ,  H01L21/8238

CPC分类号： H01L21/823842 ,  H01L21/28079 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/495 ,  H01L29/4958 ,  H01L29/66545 ,  H01L29/6659

摘要： A semiconductor device including, on a substrate, a first conduction type MOS transistor having a gate electrode provided in a first trench formed in an insulation film on the substrate, and a second conduction type MOS transistor having a gate electrode provided in a second trench formed in the insulation film, the first conduction type and the second conduction type being opposite types.

摘要翻译： 一种半导体器件，在基板上包括第一导电型MOS晶体管，该第一导电型MOS晶体管具有形成在基板上的绝缘膜中的第一沟槽中的栅电极，以及第二导电型MOS晶体管，其具有形成在第二沟槽中的栅电极 在绝缘膜中，第一导电类型和第二导电类型是相反的。