发明授权
- 专利标题： Drive circuit for power semiconductor switching device
- 专利标题（中）： 功率半导体开关器件的驱动电路
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申请号： US11624730申请日： 2007-01-19
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公开(公告)号： US07994826B2公开(公告)日： 2011-08-09
- 发明人: Katsumi Ishikawa , Hideki Miyazaki , Masahiro Nagasu , Yasuhiko Kono
- 申请人： Katsumi Ishikawa , Hideki Miyazaki , Masahiro Nagasu , Yasuhiko Kono
- 申请人地址： JP Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 优先权： JP2006-049485 20060227
- 主分类号： H03B1/00
- IPC分类号： H03B1/00
摘要：
A gate driving circuit for a voltage-driven power semiconductor switching device has (a) the voltage-driven power semiconductor switching device, (b) a driving circuit for supplying a drive signal to the gate electrode of the switching device, and (c) an inductance between the emitter control terminal or source control terminal of the switching device and the emitter main terminal or source main terminal of a semiconductor module. A voltage produced across the inductance is detected. The gate-driving voltage or gate drive resistance is made variable based on the detected value.
公开/授权文献
- US20070200602A1 DRIVE CIRCUIT FOR POWER SEMICONDUCTOR SWITCHING DEVICE 公开/授权日：2007-08-30
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