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公开(公告)号：US20070200602A1
公开(公告)日：2007-08-30
申请号：US11624730
申请日：2007-01-19
IPC分类号： H03B1/00
CPC分类号： H03K17/0828 , H03K17/0406 , H03K17/567
摘要： A gate driving circuit for a voltage-driven power semiconductor switching device has (a) the voltage-driven power semiconductor switching device, (b) a driving circuit for supplying a drive signal to the gate electrode of the switching device, and (c) an inductance between the emitter control terminal or source control terminal of the switching device and the emitter main terminal or source main terminal of a semiconductor module. A voltage produced across the inductance is detected. The gate-driving voltage or gate drive resistance is made variable based on the detected value.
摘要翻译： 电压驱动型功率半导体开关元件的栅极驱动电路具有（a）电压驱动型功率半导体开关元件，（b）驱动电路，用于向开关元件的栅电极提供驱动信号，（c） 开关器件的发射极控制端子或源极控制端子与半导体模块的发射极主端子或源极主体之间的电感。 检测到电感上产生的电压。 栅极驱动电压或栅极驱动电阻根据检测值而变化。
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公开(公告)号：US07994826B2
公开(公告)日：2011-08-09
申请号：US11624730
申请日：2007-01-19
IPC分类号： H03B1/00
CPC分类号： H03K17/0828 , H03K17/0406 , H03K17/567
摘要： A gate driving circuit for a voltage-driven power semiconductor switching device has (a) the voltage-driven power semiconductor switching device, (b) a driving circuit for supplying a drive signal to the gate electrode of the switching device, and (c) an inductance between the emitter control terminal or source control terminal of the switching device and the emitter main terminal or source main terminal of a semiconductor module. A voltage produced across the inductance is detected. The gate-driving voltage or gate drive resistance is made variable based on the detected value.
摘要翻译： 电压驱动型功率半导体开关元件的栅极驱动电路具有（a）电压驱动型功率半导体开关元件，（b）驱动电路，用于向开关元件的栅电极提供驱动信号，（c） 开关器件的发射极控制端子或源极控制端子与半导体模块的发射极主端子或源极主体之间的电感。 检测到电感上产生的电压。 栅极驱动电压或栅极驱动电阻根据检测值而变化。
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公开(公告)号：US20080258252A1
公开(公告)日：2008-10-23
申请号：US12030156
申请日：2008-02-12
申请人： Haruka Shimizu , Katsumi Ishikawa , Masahiro Nagasu , Dai Tsugawa
发明人： Haruka Shimizu , Katsumi Ishikawa , Masahiro Nagasu , Dai Tsugawa
IPC分类号： H01L27/00
CPC分类号： H03K17/16 , H01L25/18 , H01L2224/48091 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/30107 , H02M7/003 , H03K17/567 , H03K17/687 , H03K17/732 , H03K17/74 , H03K2217/0036 , H01L2924/00014 , H01L2924/00
摘要： An object of the present invention is to reduce the conducting loss of an existing conversion circuit while suppressing its noise. The present invention is typically a circuit arrangement includes at least one switching device and a free-wheel diode connected in parallel with the switching device. The free-wheel diode is formed by connecting a silicon PiN diode in parallel with a Schottky barrier diode that uses a semiconductor material having a wider band gap than silicon as a base material. The silicon PiN diode and Schottky barrier diode are separate chips.
摘要翻译： 本发明的目的是减少现有转换电路的传导损耗，同时抑制其噪声。 本发明通常是包括与开关装置并联连接的至少一个开关装置和续流二极管的电路装置。 续流二极管通过将硅PiN二极管与使用具有比硅更宽的带隙的半导体材料作为基材的肖特基势垒二极管并联形成。 硅PiN二极管和肖特基势垒二极管是分离的芯片。
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公开(公告)号：US06724313B2
公开(公告)日：2004-04-20
申请号：US10215326
申请日：2002-08-09
IPC分类号： G08B1702
CPC分类号： H02M7/00 , H01L2224/48091 , H01L2224/48472 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/00014 , H01L2924/00
摘要： A fault detection system detecting malfunctions or deteriorations, which may result in an inverter fault, is provided. The system has a temperature sensor installed on a semiconductor module to monitor a temperature rise rate. It is judged that an abnormal condition has occurred if the thermal resistance is increased by the deterioration of a soldering layer of the semiconductor module or by drive circuit malfunctions and, as a result, the relation between an operation mode and the temperature rise rate falls outside a predetermined range.
摘要翻译： 检测出可能导致逆变器故障的检测故障或故障的故障检测系统。 该系统具有安装在半导体模块上的温度传感器，用于监测升温速率。 如果通过半导体模块的焊接层的劣化或驱动电路故障而导致热阻增加，则判定为异常状态，结果，操作模式与升温速度之间的关系落在外侧 预定范围。
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公开(公告)号：US07737761B2
公开(公告)日：2010-06-15
申请号：US12019032
申请日：2008-01-24
申请人： Katsumi Ishikawa , Masahiro Nagasu , Dai Tsugawa
发明人： Katsumi Ishikawa , Masahiro Nagasu , Dai Tsugawa
CPC分类号： H03K17/567 , H03K17/163 , H03K17/168 , H03K2217/0036
摘要： A subject of the present invention is to reduce noise caused by ringing or the like while reducing turn-on power loss of the element and reverse recovery loss of the diode in a switching circuit of a power semiconductor element to which a SiC diode having small recovery current is connected in parallel.A means for solving the problem is to detect gate voltage and/or collector voltage of the power semiconductor switching element and change gate drive voltage in several stages based on the detected value.
摘要翻译： 本发明的目的是减少振荡等引起的噪声，同时降低元件的导通功率损耗并且在具有小恢复的SiC二极管的功率半导体元件的开关电路中的二极管的反向恢复损耗 电流并联。 解决该问题的手段是基于检测值来检测功率半导体开关元件的栅极电压和/或集电极电压并且以几个阶段改变栅极驱动电压。
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6.发明申请CIRCUIT DEVICE HAVING A FREE WHEELING DIODE, CIRCUIT DEVICE AND POWER CONVERTER USING DIODES 审中-公开具有自由切换二极管，电路设备和使用二极管的电源转换器的电路设备公开(公告)号：US20090168471A1
公开(公告)日：2009-07-02
申请号：US12342361
申请日：2008-12-23
申请人： Dai Tsugawa , Katsumi Ishikawa , Masahiro Nagasu , Haruka Shimizu
发明人： Dai Tsugawa , Katsumi Ishikawa , Masahiro Nagasu , Haruka Shimizu
IPC分类号： H02H7/122
CPC分类号： H03K17/08148 , H01L29/1608 , H01L29/2003 , H01L29/8611 , H01L29/872 , H01L2224/48091 , H01L2224/48227 , H01L2224/49113 , H01L2224/49171 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/30107 , H01L2924/3011 , H03K17/74 , H03K2217/0036 , H01L2924/00014 , H01L2924/00
摘要： A circuit device includes at least one switching element and a free wheeling diode connected in parallel to the switching element. The free wheeling diode is made up of a Schottky barrier diode using a semiconductor material having a band gap larger than silicon as its base material and also a silicon PiN diode, which are connected in parallel. The Schottky barrier diode and the silicon PiN diode are provided in the form of separate chips. A circuit system is also provided wherein a diode having a Schottky junction of a compound semiconductor as a rectification element built therein is combined, and a relationship, R2>4L/C, with impedance R (resistance), L (inductance), and C (capacitance) determined by a closed circuit between a power source and a positive or negative terminal when the current of the diode becomes zero during recovery operation, is satisfied.
摘要翻译： 电路装置包括与开关元件并联连接的至少一个开关元件和续流二极管。 续流二极管由肖特基势垒二极管构成，其使用具有大于硅的带隙作为其基底的半导体材料以及并联连接的硅PiN二极管。 肖特基势垒二极管和硅PiN二极管以单独的芯片的形式提供。 还提供了一种电路系统，其中组合了具有构成其中的整流元件的化合物半导体的肖特基结的二极管，并且具有阻抗R（电阻），L（电感）和C的关系R 2> 4L / C （电容）由二极管的电流在恢复动作期间变为零时由电源与正极或负极之间的闭合决定。
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公开(公告)号：US07880174B2
公开(公告)日：2011-02-01
申请号：US12030156
申请日：2008-02-12
申请人： Haruka Shimizu , Katsumi Ishikawa , Masahiro Nagasu , Dai Tsugawa
发明人： Haruka Shimizu , Katsumi Ishikawa , Masahiro Nagasu , Dai Tsugawa
IPC分类号： H01L27/00
CPC分类号： H03K17/16 , H01L25/18 , H01L2224/48091 , H01L2924/12032 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/30107 , H02M7/003 , H03K17/567 , H03K17/687 , H03K17/732 , H03K17/74 , H03K2217/0036 , H01L2924/00014 , H01L2924/00
摘要： An object of the present invention is to reduce the conducting loss of an existing conversion circuit while suppressing its noise. The present invention is typically a circuit arrangement includes at least one switching device and a free-wheel diode connected in parallel with the switching device. The free-wheel diode is formed by connecting a silicon PiN diode in parallel with a Schottky barrier diode that uses a semiconductor material having a wider band gap than silicon as a base material. The silicon PiN diode and Schottky barrier diode are separate chips.
摘要翻译： 本发明的目的是减少现有转换电路的传导损耗，同时抑制其噪声。 本发明通常是包括与开关装置并联连接的至少一个开关装置和续流二极管的电路装置。 续流二极管通过将硅PiN二极管与使用具有比硅更宽的带隙的半导体材料作为基材的肖特基势垒二极管并联形成。 硅PiN二极管和肖特基势垒二极管是分离的芯片。
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公开(公告)号：US07783396B2
公开(公告)日：2010-08-24
申请号：US12015078
申请日：2008-01-16
CPC分类号： B60W30/184 , B60W10/06 , B60W10/08 , B60W10/18 , B60W10/26 , B60W20/11 , B60W2510/244 , B60W2510/246 , B60W2530/14 , B60W2550/402 , B60W2720/103 , Y02T10/6291 , Y10S903/903
摘要： In a conventional hybrid scheme used to mount a rechargeable battery in a motor vehicle, store into the battery the electric power that has been obtained via a regenerative brake, and utilize the power during acceleration of the vehicle, when a temperature rise of the battery due to charging or discharging causes a temperature of the battery to stay outside a defined range, it has been absolutely necessary to stop the battery charge or discharge, and fuel efficiency has decreased. This invention predicts a charge level and temperature of a rechargeable battery from the cruising input/output power requirements calculated from route information and historical records of cruising, prevents a stoppage of the battery by calculating chronological engine output and brake control data for the temperature to stay within a defined range, and hence improves fuel efficiency.
摘要翻译： 在用于将可再充电电池安装在机动车辆中的常规混合方案中，当电池的温度升高到达时，将通过再生制动获得的电力存储在电池中并在车辆加速期间利用电力 为了使电池的温度保持在限定范围内，绝对需要停止电池充放电，燃料效率降低。 本发明根据从路线信息和巡航历史记录计算的巡航输入/输出功率要求预测可再充电电池的充电水平和温度，通过计算按时间顺序的发动机输出和温度停留的制动控制数据来防止电池停止 在一定范围内，从而提高燃油效率。
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公开(公告)号：US07570085B2
公开(公告)日：2009-08-04
申请号：US11624717
申请日：2007-01-19
申请人： Katsumi Ishikawa , Yutaka Sato , Masahiro Nagasu , Seiji Ishida
发明人： Katsumi Ishikawa , Yutaka Sato , Masahiro Nagasu , Seiji Ishida
IPC分类号： H03K3/00
CPC分类号： H03K17/0406 , H03K17/168
摘要： A gate driver circuit of a voltage drive type power semiconductor switching device capable of speeding up di/dt and dv/dt even during large-current driving to thereby reduce the switching loss is disclosed. This power semiconductor switching device gate driving circuit includes a drive circuit which applies a drive signal to the gate electrode of the power semiconductor switching device and a measurement unit for measuring a flow current of the power semiconductor switching device. Based on a detected value of the flow current of the power semiconductor switching device, the gate is made variable in mirror voltage thereof.
摘要翻译： 公开了即使在大电流驱动期间能够加快di / dt和dv / dt的电压驱动型功率半导体开关器件的栅极驱动器电路，从而降低开关损耗。 该功率半导体开关元件栅极驱动电路具有向功率半导体开关元件的栅电极施加驱动信号的驱动电路和用于测量功率半导体开关元件的流量的测量单元。 基于功率半导体开关器件的流量电流的检测值，栅极的镜电压可变。
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公开(公告)号：US07046155B2
公开(公告)日：2006-05-16
申请号：US10856833
申请日：2004-06-01
CPC分类号： H02M7/00 , H01L2224/48091 , H01L2224/48472 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/00014 , H01L2924/00
摘要： A fault detection system detecting malfunctions or deteriorations, which may result in an inverter fault, is provided. The system has a temperature sensor installed on a semiconductor module to monitor a temperature rise rate. It is judged that an abnormal condition has occurred if the thermal resistance is increased by the deterioration of a soldering layer of the semiconductor module or by drive circuit malfunctions and, as a result, the relation between an operation mode and the temperature rise rate falls outside a predetermined range.
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