发明授权
- 专利标题： Electron beam enhanced surface wave plasma source
- 专利标题（中）： 电子束增强表面波等离子体源
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申请号： US11518884申请日： 2006-09-12
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公开(公告)号： US07998307B2公开(公告)日： 2011-08-16
- 发明人: Lee Chen , Paul Moroz
- 申请人： Lee Chen , Paul Moroz
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 主分类号： C23C16/00
- IPC分类号： C23C16/00 ; C23C14/00 ; C23F1/00 ; H01L21/306 ; A62D3/00
摘要：
A plasma processing system is described for generating plasma with a ballistic electron beam using a surface wave plasma (SWP) source, such as a radial line slot antenna (RLSA) during semiconductor device fabrication. The antenna comprises a resonator plate having a partially open, electrically conductive layer coupled to a surface of the resonator plate. For example, the electrically conductive layer is formed at an interface between the resonator plate and the plasma, and a direct current (DC) voltage is applied to the electrically conductive layer.
公开/授权文献
- US20080060759A1 Electron beam enhanced surface wave plasma source 公开/授权日：2008-03-13
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