发明授权
- 专利标题： Contact patterning method with transition etch feedback
- 专利标题（中）： 具有过渡蚀刻反馈的接触图案化方法
-
申请号： US12262860申请日： 2008-10-31
-
公开(公告)号： US07998869B2公开(公告)日： 2011-08-16
- 发明人: Byung-Goo Jeon , Sung-Chul Park , Nikki Edleman , Alois Gutmann , Fang Chen
- 申请人： Byung-Goo Jeon , Sung-Chul Park , Nikki Edleman , Alois Gutmann , Fang Chen
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： F. Chau & Associates, LLC
- 主分类号： H01L21/311
- IPC分类号： H01L21/311
摘要：
A method for forming a contact hole in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including measuring a percentage of oxygen in an etching chamber, and controlling the percentage of oxygen in the etching chamber to enlarge a temporary inner diameter near a top of the contact hole.
公开/授权文献
- US20100112729A1 CONTACT PATTERNING METHOD WITH TRANSITION ETCH FEEDBACK 公开/授权日：2010-05-06
信息查询
IPC分类:
