发明授权
US07999356B2 Composition for film formation, insulating film, semiconductor device, and process for producing the semiconductor device
有权
用于成膜的组合物，绝缘膜，半导体器件以及用于制造半导体器件的工艺
- 专利标题： Composition for film formation, insulating film, semiconductor device, and process for producing the semiconductor device
- 专利标题（中）： 用于成膜的组合物，绝缘膜，半导体器件以及用于制造半导体器件的工艺
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申请号： US12548492申请日： 2009-08-27
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公开(公告)号： US07999356B2公开(公告)日： 2011-08-16
- 发明人: Yasushi Nakasaki , Nobuhide Yamada , Miyoko Shimada , Hideshi Miyajima , Kei Watanabe
- 申请人： Yasushi Nakasaki , Nobuhide Yamada , Miyoko Shimada , Hideshi Miyajima , Kei Watanabe
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Turocy & Watson, LLP
- 优先权： JP2008-246845 20080925
- 主分类号： H01L23/58
- IPC分类号： H01L23/58
摘要：
According to one aspect of the present invention, there is provided a composition for film formation, comprising a compound represented by general formula (I) or a hydrolyzed-dehydrocondensation product thereof: X13-mR1mSiR2SiR3nX23-n (I) wherein R1 and R3 represent a hydrogen atom or a monovalent substituent; R2 represents a divalent group having an alicyclic structure with four carbon atoms or a derivative of the divalent group; X1 and X2 represent a hydrolysable group; and m and n are an integer of from 0 to 2.