-
1.发明授权Composition for film formation, insulating film, semiconductor device, and process for producing the semiconductor device 有权用于成膜的组合物，绝缘膜，半导体器件以及用于制造半导体器件的工艺公开(公告)号：US07999356B2
公开(公告)日：2011-08-16
申请号：US12548492
申请日：2009-08-27
IPC分类号： H01L23/58
CPC分类号： H01L21/76801 , C07F7/1804 , H01L21/02126 , H01L21/02211 , H01L21/02274 , H01L21/02282 , H01L21/02337 , H01L21/02348 , H01L21/02351 , H01L21/3105 , H01L21/31633 , H01L21/67109 , H01L21/67115
摘要： According to one aspect of the present invention, there is provided a composition for film formation, comprising a compound represented by general formula (I) or a hydrolyzed-dehydrocondensation product thereof: X13-mR1mSiR2SiR3nX23-n (I) wherein R1 and R3 represent a hydrogen atom or a monovalent substituent; R2 represents a divalent group having an alicyclic structure with four carbon atoms or a derivative of the divalent group; X1 and X2 represent a hydrolysable group; and m and n are an integer of from 0 to 2.
摘要翻译： 根据本发明的一个方面，提供一种成膜用组合物，其包含通式（I）表示的化合物或其水解脱氢产物：X13-mR1mSiR2SiR3nX23-n（Ⅰ），其中R1和R3表示 氢原子或一价取代基; R2表示具有四个碳原子的脂环结构或二价基团的衍生物的二价基团; X1和X2表示可水解基团; m和n为0〜2的整数。
-
2.发明申请COMPOSITION FOR FILM FORMATION, INSULATING FILM, SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING THE SEMICONDUCTOR DEVICE 有权用于膜形成的组合物，绝缘膜，半导体器件和用于制造半导体器件的工艺公开(公告)号：US20100072581A1
公开(公告)日：2010-03-25
申请号：US12548492
申请日：2009-08-27
CPC分类号： H01L21/76801 , C07F7/1804 , H01L21/02126 , H01L21/02211 , H01L21/02274 , H01L21/02282 , H01L21/02337 , H01L21/02348 , H01L21/02351 , H01L21/3105 , H01L21/31633 , H01L21/67109 , H01L21/67115
摘要： According to one aspect of the present invention, there is provided a composition for film formation, comprising a compound represented by general formula (I) or a hydrolyzed-dehydrocondensation product thereof: X13-mR1mSiR2SiR3nX23-n (I) wherein R1 and R3 represent a hydrogen atom or a monovalent substituent; R2 represents a divalent group having an alicyclic structure with four carbon atoms or a derivative of the divalent group; X1 and X2 represent a hydrolysable group; and m and n are an integer of from 0 to 2.
摘要翻译： 根据本发明的一个方面，提供一种成膜用组合物，其包含通式（I）表示的化合物或其水解脱氢产物：X13-mR1mSiR2SiR3nX23-n（Ⅰ），其中R1和R3表示 氢原子或一价取代基; R2表示具有四个碳原子的脂环结构或二价基团的衍生物的二价基团; X1和X2表示可水解基团; m和n为0〜2的整数。
-
公开(公告)号：US6153509A
公开(公告)日：2000-11-28
申请号：US343699
申请日：1999-06-30
申请人： Kei Watanabe , Yukio Nishiyama , Naruhiko Kaji , Hideshi Miyajima
发明人： Kei Watanabe , Yukio Nishiyama , Naruhiko Kaji , Hideshi Miyajima
IPC分类号： H01L21/768 , H01L21/38 , H01L21/322 , H01L21/44
CPC分类号： H01L21/76837 , H01L21/76834 , Y10S438/963
摘要： In a method of manufacturing a semiconductor device including a semiconductor element formed on a semiconductor substrate, an SiOF film is formed at least on the top surfaces of metal wirings under condition that an in-chamber pressure is 5 mTorr or lower. The SiOF film can thus be buried into a space between the metal wirings without causing any void and the capacitance between the wirings can be prevented from increasing, while preventing the metal wirings from being damaged and preventing the aspect ratio from increasing.
摘要翻译： 在制造半导体元件的半导体器件的制造方法中，在室内压力为5mTorr以下的条件下，至少在金属配线的上表面上形成SiOF膜。 因此，可以将SiOF膜埋入金属配线之间的空间，而不产生任何空隙，并且可以防止布线之间的电容增加，同时防止金属布线被损坏并防止纵横比增加。
-
公开(公告)号：US09655830B2
公开(公告)日：2017-05-23
申请号：US13519348
申请日：2010-12-27
申请人： Minako Sato , Takashi Teshigawara , Kei Watanabe
发明人： Minako Sato , Takashi Teshigawara , Kei Watanabe
摘要： To provide a transparent to translucent cosmetic composition which is highly stable, and can impart excellent actual feelings of effectiveness in use, such as a feeling of skin penetration, a feeling of non-stickiness, and a skin-softening effect after application thereof to the skin. A transparent to translucent cosmetic composition comprising: (a) a hydrogenated phospholipid, (b) one or more selected from among branched higher fatty acids and higher alcohols, and (c) a polyalcohol that acts as a good solvent and/or a poor solvent for component (a). Preferably, component (b) is isostearic acid and/or isostearyl alcohol. Preferably, the ratio of component (a)/component (b) is from 1/0.01 to 1/0.4 (by mass).
-
公开(公告)号：US09177729B2
公开(公告)日：2015-11-03
申请号：US13977711
申请日：2012-02-06
申请人： Ick-soo Kim , Byoung-Suhk Kim , Kei Watanabe , Naotaka Kimura , Kyu-oh Kim , Jae-hwan Lee
发明人： Ick-soo Kim , Byoung-Suhk Kim , Kei Watanabe , Naotaka Kimura , Kyu-oh Kim , Jae-hwan Lee
CPC分类号： H01G9/02 , H01M2/145 , H01M2/162 , H01M2/1686
摘要： The present invention provides a separator and a method for manufacturing the separator. The separator includes a first nanofiber layer (20) which has a lattice shape when viewed from a plan view, a second nanofiber layer (30) which is provided on a first surface of the first nanofiber layer (20) and is thinner than the first nanofiber layer, and a third nanofiber layer (40) which is provided on a second surface of the first nanofiber layer and is thinner than the first nanofiber layer. The thickness of the first nanofiber layer ranges from 7 μm to 30 μm. The thickness of each of the second and third nanofiber layers ranges from 1 μm to 5 μm. The present invention can provide a separator which has high insulation, high dendrite resistance, high ion conductivity and high mechanical strength.
摘要翻译： 本发明提供一种分离器及其制造方法。 所述隔板包括从平面观察时具有格子状的第一纳米纤维层（20），设置在所述第一纳米纤维层（20）的第一面上且比所述第一纳米纤维层薄 纳米纤维层和设置在第一纳米纤维层的第二表面上并且比第一纳米纤维层薄的第三纳米纤维层（40）。 第一纳米纤维层的厚度为7μm〜30μm。 第二和第三纳米纤维层的厚度范围为1μm至5μm。 本发明可以提供绝缘性高，耐枝晶性高，离子电导率高，机械强度高的隔膜。
-
公开(公告)号：US09090251B2
公开(公告)日：2015-07-28
申请号：US13879939
申请日：2011-09-29
申请人： Kei Watanabe , Takeshi Ohno
发明人： Kei Watanabe , Takeshi Ohno
CPC分类号： B60W20/00 , B60K6/48 , B60W10/06 , B60W10/08 , B60W2510/0676 , B60W2510/244 , B60W2600/00 , B60W2710/0644 , B60W2710/065 , B60W2710/0688 , B60W2710/0694 , B60Y2200/92 , F02D31/001 , F02D41/0245 , F02D41/083 , F02D2200/503 , F02N2200/061 , F02P5/1508 , Y02T10/46 , Y02T10/6221 , Y02T10/6286 , Y10S903/93
摘要： An idling revolution speed control which maintains an engine speed at a predetermined target idling revolution speed during the idling drive includes an engine idling mode which performs the idling revolution speed control through an engine and a motor idling mode which performs the idling revolution speed control through a motor. The two modes are switched in accordance with a battery charged state. During the idling drive in an engine cold state, an ignition timing of the engine in the motor idling mode is retarded and the retardation quantities R3, R4 are expanded to be larger than the retardation quantities R1, R2 in the engine idling mode. Thus, a rise in an exhaust temperature of the engine is promoted.
摘要翻译： 在怠速驱动期间将发动机转速保持在预定目标怠速转速的怠速转速控制包括通过发动机进行怠速转速控制的发动机怠速模式和通过a进行怠速转速控制的电动机怠速模式 发动机。 两种模式根据电池充电状态进行切换。 在发动机冷态的怠速驱动期间，发动机在怠速模式下的点火正时被延迟，延迟量R3，R4扩大到大于发动机怠速模式下的延迟量R1，R2。 因此，促进了发动机排气温度的上升。
-
公开(公告)号：US20140004405A1
公开(公告)日：2014-01-02
申请号：US13977711
申请日：2012-02-06
申请人： Ick-soo Kim , Byoung-Suhk Kim , Kei Watanabe , Naotaka Kimura , Kyu-oh Kim , Jae-hwan Lee
发明人： Ick-soo Kim , Byoung-Suhk Kim , Kei Watanabe , Naotaka Kimura , Kyu-oh Kim , Jae-hwan Lee
CPC分类号： H01G9/02 , H01M2/145 , H01M2/162 , H01M2/1686
摘要： The present invention provides a separator and a method for manufacturing the separator. The separator includes a first nanofiber layer (20) which has a lattice shape when viewed from a plan view, a second nanofiber layer (30) which is provided on a first surface of the first nanofiber layer (20) and is thinner than the first nanofiber layer, and a third nanofiber layer (40) which is provided on a second surface of the first nanofiber layer and is thinner than the first nanofiber layer. The thickness of the first nanofiber layer ranges from 7 μm to 30 μm. The thickness of each of the second and third nanofiber layers ranges from 1 μm to 5 μm. The present invention can provide a separator which has high insulation, high dendrite resistance, high ion conductivity and high mechanical strength.
摘要翻译： 本发明提供一种分离器及其制造方法。 所述隔板包括从平面观察时具有格子状的第一纳米纤维层（20），设置在所述第一纳米纤维层（20）的第一面上且比所述第一纳米纤维层薄 纳米纤维层和设置在第一纳米纤维层的第二表面上并且比第一纳米纤维层薄的第三纳米纤维层（40）。 第一纳米纤维层的厚度为7μm〜30μm。 第二和第三纳米纤维层中的每一个的厚度范围为1μm至5μm。 本发明可以提供绝缘性高，耐枝晶性高，离子电导率高，机械强度高的隔膜。
-
公开(公告)号：US20130182366A1
公开(公告)日：2013-07-18
申请号：US13621982
申请日：2012-09-18
IPC分类号： H01G5/01
摘要： According to one embodiment, a MEMS element comprises a first electrode fixed on a substrate, a second electrode formed above the first electrode to face it, and vertically movable, a first anchor portion formed on the substrate and configured to support the second electrode, and a first spring portion configured to connect the second electrode and the first anchor portion. The first spring portion includes a liner layer includes a brittle material in contact with the second electrode and the first anchor portion, and a base layer formed on the liner layer, includes a brittle material having a composition different from that of the liner layer, and having a film thickness larger than that of the liner layer.
摘要翻译： 根据一个实施例，MEMS元件包括固定在基板上的第一电极，形成在第一电极上面以面对它并且可垂直移动的第二电极，形成在基板上并构造成支撑第二电极的第一锚定部分，以及 构造成连接第二电极和第一锚固部分的第一弹簧部分。 第一弹簧部分包括：衬垫层，包括与第二电极和第一锚定部分接触的脆性材料，以及形成在衬垫层上的基底层，包括具有不同于衬垫层的组成的脆性材料，以及 其膜厚度大于衬层的膜厚。
-
公开(公告)号：US20120205609A1
公开(公告)日：2012-08-16
申请号：US13235842
申请日：2011-09-19
申请人： Shigeto OSHINO , Kenji Aoyama , Kazuhiko Yamamoto , Shinichi Nakao , Kei Watanabe , Satoshi Ishikawa
发明人： Shigeto OSHINO , Kenji Aoyama , Kazuhiko Yamamoto , Shinichi Nakao , Kei Watanabe , Satoshi Ishikawa
IPC分类号： H01L45/00 , H01L21/8239 , B82Y99/00
CPC分类号： H01L27/101 , B82Y10/00 , B82Y30/00 , H01L27/2481 , H01L45/149 , H01L45/1608
摘要： According to one embodiment, a memory device includes a lower electrode layer, a nanomaterial assembly layer, a protective layer and an upper electrode layer. The nanomaterial assembly layer is provided on the lower electrode layer and includes a plurality of fine conductors assembled via a gap. The protective layer is provided on the nanomaterial assembly layer, is conductive, is in contact with the fine conductors, and includes an opening. The upper electrode layer is provided on the protective layer and is in contact with the protective layer.
摘要翻译： 根据一个实施例，存储器件包括下电极层，纳米材料组合层，保护层和上电极层。 纳米材料组装层设置在下电极层上，并且包括通过间隙组装的多个细导体。 保护层设置在纳米材料组装层上，导电，与细导体接触，并包括开口。 上电极层设置在保护层上并与保护层接触。
-
公开(公告)号：US20120119179A1
公开(公告)日：2012-05-17
申请号：US13354380
申请日：2012-01-20
CPC分类号： B82Y10/00 , H01L27/1021 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/149 , H01L45/1608
摘要： According to one embodiment, a memory device includes a nanomaterial aggregate layer of a plurality of fine conductors aggregating via gaps and an insulating material disposed in the gaps.
摘要翻译： 根据一个实施例，存储器件包括通过间隙聚集的多个细小导体的纳米材料聚集体层和设置在间隙中的绝缘材料。
-
-
-
-
-
-
-
-
-
搜索结果
78 条记录 (耗时 0.032 秒)