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18 条记录 (耗时 0.025 秒)

    Method of manufacturing semiconductor device
    6.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US06746969B2

    公开(公告)日：2004-06-08

    申请号：US09982003

    申请日：2001-10-19

    申请人： Miyoko Shimada ,  Hideshi Miyajima ,  Rempei Nakata ,  Hideto Matsuyama ,  Katsuya Okumura ,  Masahiko Hasunuma ,  Nobuo Hayasaka

    发明人： Miyoko Shimada ,  Hideshi Miyajima ,  Rempei Nakata ,  Hideto Matsuyama ,  Katsuya Okumura ,  Masahiko Hasunuma ,  Nobuo Hayasaka

    IPC分类号： H01L2131

    CPC分类号： H01L21/02351 ,  H01L21/02126 ,  H01L21/02137 ,  H01L21/02312 ,  H01L21/02337 ,  H01L21/2636 ,  H01L21/3122 ,  H01L21/316 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76834

    摘要： A method of manufacturing a semiconductor device comprises preparing a substrate to be treated, and forming an insulation film above the substrate, which includes applying an insulation film raw material above the substrate, the insulation film raw material including a substance or a precursor of the substance, the insulation film comprising the substance, curing the insulation film raw material by irradiating an electron beam on the substrate while heating the substrate in a reactor chamber, changing at least one of parameter selected from the group consisting of pressure in the reactor chamber, temperature of the substrate, type of gas having the substrate exposed thereto, flow rate of gas introduced into the reactor chamber, position of the substrate, and quantity of electrons incident to the substrate per unit time when the electron beam is being irradiated on the substrate.

    摘要翻译： 一种制造半导体器件的方法包括：准备待处理的衬底，以及在衬底上方形成绝缘膜，该绝缘膜包括在衬底上施加绝缘膜原料，所述绝缘膜原料包括物质或物质的前体 所述绝缘膜包含该物质，通过在反应器室中加热基板同时在基板上照射电子束来固化绝缘膜原料，改变选自反应器室中的压力，温度 的基板，当电子束被照射在基板上时，具有暴露于其中的基板的气体类型，引入反应室的气体流量，基板的位置和每单位时间入射到基板的电子量。

    Method of making a low dielectric insulation layer
    7.
    发明授权
    Method of making a low dielectric insulation layer 失效
    制造低介电绝缘层的方法

    公开(公告)号：US06703302B2

    公开(公告)日：2004-03-09

    申请号：US10141578

    申请日：2002-05-09

    申请人： Hideshi Miyajima ,  Miyoko Shimada ,  Rempei Nakata

    发明人： Hideshi Miyajima ,  Miyoko Shimada ,  Rempei Nakata

    IPC分类号： H01L214763

    CPC分类号： H01L21/76825 ,  H01L21/76828

    摘要： A method for manufacturing a semiconductor device, comprising forming a low dielectric constant insulating film containing Si atoms over a semiconductor substrate, heating the low dielectric constant insulating film while irradiating the low dielectric constant insulating film with an electron beam, and exposing the low dielectric constant insulating film during or after the heating to a gas promoting the bond formation of the Si atoms.

    摘要翻译： 一种制造半导体器件的方法，包括在半导体衬底上形成含有Si原子的低介电常数绝缘膜，在用电子束照射低介电常数绝缘膜的同时加热低介电常数绝缘膜，并暴露低介电常数 绝缘膜在加热期间或之后至促进Si原子的键形成的气体。

    Semiconductor light emitting device and light emitting module
    8.
    发明授权
    Semiconductor light emitting device and light emitting module 失效
    半导体发光器件和发光模块

    公开(公告)号：US08648375B2

    公开(公告)日：2014-02-11

    申请号：US13601336

    申请日：2012-08-31

    申请人： Hideto Furuyama ,  Akihiro Kojima ,  Miyoko Shimada ,  Yosuke Akimoto ,  Hideyuki Tomizawa

    发明人： Hideto Furuyama ,  Akihiro Kojima ,  Miyoko Shimada ,  Yosuke Akimoto ,  Hideyuki Tomizawa

    IPC分类号： H01L33/00

    CPC分类号： H01L33/505

    摘要： According to one embodiment, a semiconductor light emitting device includes: a semiconductor layer including a first and second surfaces, and a light emitting layer; a p-side electrode provided on the second surface; an n-side electrode provided on the second surface; a first insulating film covering the p-side and the n-side electrodes; a p-side wiring section electrically connected to the p-side electrode through the first insulating film; an n-side wiring section electrically connected to the n-side electrode through the first insulating film; and a phosphor layer provided on the first surface. The phosphor layer has an upper surface and an oblique surface, the oblique surface forming an obtuse angle with the upper surface and inclined with respect to the first surface. Thickness of the phosphor layer immediately below the oblique surface is smaller than thickness of the phosphor layer immediately below the upper surface.

    摘要翻译： 根据一个实施例，半导体发光器件包括：包括第一和第二表面的半导体层和发光层; 设置在第二表面上的p侧电极; 设置在所述第二表面上的n侧电极; 覆盖p侧和n侧电极的第一绝缘膜; 通过第一绝缘膜电连接到p侧电极的p侧布线部分; 通过第一绝缘膜与n侧电极电连接的n侧配线部; 以及设置在第一表面上的荧光体层。 荧光体层具有上表面和倾斜表面，倾斜表面与上表面形成钝角并相对于第一表面倾斜。 斜面正下方的荧光体层的厚度小于上表面正下方的荧光体层的厚度。

    Semiconductor light emitting device
    9.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US08872210B2

    公开(公告)日：2014-10-28

    申请号：US13598393

    申请日：2012-08-29

    申请人： Hideto Furuyama ,  Yosuke Akimoto ,  Miyoko Shimada ,  Akihiro Kojima ,  Yoshiaki Sugizaki

    发明人： Hideto Furuyama ,  Yosuke Akimoto ,  Miyoko Shimada ,  Akihiro Kojima ,  Yoshiaki Sugizaki

    IPC分类号： H01L33/40

    CPC分类号： H01L33/504 ,  H01L24/97 ,  H01L33/46 ,  H01L33/501 ,  H01L33/52 ,  H01L33/60 ,  H01L33/62 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2933/0091 ,  H01L2924/00

    摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting element, a phosphor layer, and a fluorescent reflection film. The phosphor layer has a transparent medium, a phosphor dispersed in the transparent medium, and a particle dispersed in the transparent medium. The phosphor is excited by the excitation light so as to emit a fluorescence. The particle is a magnitude of not more than 1/10 a wavelength of the excitation light. The particle has a different refractive index from a refractive index of the transparent medium. The fluorescent reflection film is provided between the light emitting element and the phosphor layer. The fluorescent reflection film has a higher reflectance with respect to a fluorescent wavelength of the phosphor, than a reflectance with respect to the wavelength of the excitation light.

    摘要翻译： 根据一个实施例，半导体发光器件包括发光元件，荧光体层和荧光反射膜。 荧光体层具有透明介质，分散在透明介质中的荧光体和分散在透明介质中的粒子。 荧光体被激发光激发，从而发出荧光。 粒子的大小不大于激发光的波长的1/10。 该颗粒具有与透明介质的折射率不同的折射率。 荧光反射膜设置在发光元件和荧光体层之间。 荧光反射膜相对于荧光体的荧光波长具有比相对于激发光的波长的反射率更高的反射率。

    Semiconductor light emitting device and method for manufacturing same
    10.
    发明授权
    Semiconductor light emitting device and method for manufacturing same 有权
    半导体发光器件及其制造方法

    公开(公告)号：US09153746B2

    公开(公告)日：2015-10-06

    申请号：US13601568

    申请日：2012-08-31

    申请人： Akihiro Kojima ,  Yosuke Akimoto ,  Hideyuki Tomizawa ,  Hideko Mukaida ,  Miyoko Shimada ,  Yoshiaki Sugizaki ,  Hideto Furuyama

    发明人： Akihiro Kojima ,  Yosuke Akimoto ,  Hideyuki Tomizawa ,  Hideko Mukaida ,  Miyoko Shimada ,  Yoshiaki Sugizaki ,  Hideto Furuyama

    IPC分类号： H01L33/52 ,  H01L33/00 ,  H01L33/38 ,  H01L21/50

    CPC分类号： H01L33/486 ,  H01L33/387 ,  H01L33/62

    摘要： According to an embodiment, a semiconductor light emitting device includes a semiconductor layer having a light emitting layer. The device also includes a p-side electrode provided on a first region including the light emitting layer; an n-side electrode provided on a second region layer not including the light emitting layer; and a first insulating film having a first opening communicating with the p-side electrode and a second opening communicating with the n-side electrode. A p-side interconnection is provided on the first insulating film and electrically connected to the p-side electrode through the first opening. An n-side interconnection is provided on the first insulating film and electrically connected to the n-side electrode through the second opening. The p-side interconnection has a plurality of protrusive parts protruding toward the n-side interconnection, and the n-side interconnection has a plurality of portions extending between the protrusive parts of the p-side interconnection.

    摘要翻译： 根据实施例，半导体发光器件包括具有发光层的半导体层。 该装置还包括设置在包括发光层的第一区域上的p侧电极; 设置在不包括发光层的第二区域层上的n侧电极; 以及具有与p侧电极连通的第一开口的第一绝缘膜和与n侧电极连通的第二开口。 p侧互连设置在第一绝缘膜上，并通过第一开口与p侧电极电连接。 n侧互连设置在第一绝缘膜上，并通过第二开口与n侧电极电连接。 p侧互连具有向n侧互连突出的多个突出部，并且n侧互连具有在p侧互连的突出部之间延伸的多个部分。