发明授权
- 专利标题: Semiconductor device with recording layer containing indium, germanium, antimony and tellurium
- 专利标题(中): 具有含有铟,锗,锑和碲的记录层的半导体器件
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申请号: US12522744申请日: 2007-01-11
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公开(公告)号: US08000126B2公开(公告)日: 2011-08-16
- 发明人: Takahiro Morikawa , Motoyasu Terao , Norikatsu Takaura , Kenzo Kurotsuchi , Nozomu Matsuzaki , Yoshihisa Fujisaki , Masaharu Kinoshita , Yuichi Matsui
- 申请人: Takahiro Morikawa , Motoyasu Terao , Norikatsu Takaura , Kenzo Kurotsuchi , Nozomu Matsuzaki , Yoshihisa Fujisaki , Masaharu Kinoshita , Yuichi Matsui
- 申请人地址: JP Kawasaki-shi
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kawasaki-shi
- 代理机构: Miles & Stockbridge P.C.
- 国际申请: PCT/JP2007/050269 WO 20070111
- 国际公布: WO2008/084545 WO 20080717
- 主分类号: G11C11/00
- IPC分类号: G11C11/00 ; H01L29/66
摘要:
A phase change memory is formed of a plug buried within a through-hole in an insulating film formed on a semiconductor substrate, an interface layer formed on the insulating film in which the plug is buried, a recording layer formed of a chalcogenide layer formed on the interface layer, and an upper contact electrode formed on the recording layer. The recording layer storing information according to resistance value change is made of chalcogenide material containing indium in an amount range from 20 atomic % to 38 atomic %, germanium in a range from 9 atomic % to 28 atomic %, antimony in a range from 3 atomic % to 18 atomic %, and tellurium in a range from 42 atomic % to 63 atomic %, where the content of germanium larger than or equal to the content of antimony.
公开/授权文献
- US20100096613A1 SEMICONDUCTOR DEVICE 公开/授权日:2010-04-22